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IPD13N03LA IPF13N03LA

IPS13N03LA IPU13N03LA

Opti

MOS

2 Power-Transistor

Features

· Ideal for high-frequency dc/dc converters

· Qualified according to JEDEC

for target applications

· N-channel, logic level

· Excellent gate charge x R

DS(on)

product (FOM)

· Superior thermal resistance

· 175 °C operating temperature

Maximum ratings, at T

=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

=25 °C

=100 °C

Pulsed drain current

D,pulse

=25 °C

210

Avalanche energy, single pulse

=24 A, R

=25

Reverse diode dv /dt

dv /dt

=30 A, V

=20 V,

di /dt =200 A/µs,
T

j,max

=175 °C

kV/µs

Gate source voltage

±20

Power dissipation

tot

=25 °C

Operating and storage temperature

, T

stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

DS(on),max

12.8

Product Summary

Type

IPD13N03LA

IPF13N03LA

IPS13N03LA

IPU13N03LA

Package

P-TO252-3-11

P-TO252-3-23

P-TO251-3-11

P-TO251-3-21

Ordering Code

Q67042-S4159

Q67042-S4195

Q67042-S4248

Q67042-S4160

Marking

13N03LA

Rev. 1.7

page 1

2004-05-24

IPD13N03LA IPF13N03LA

IPS13N03LA IPU13N03LA

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

thJC

3.2

K/W

SMD version, device on PCB

thJA

minimal footprint

6 cm

cooling area

Electrical characteristics, at T

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

(BR)DSS

=0 V, I

=1 mA

Gate threshold voltage

GS(th)

, I

=20 µA

1.2

1.6

Zero gate voltage drain current

DSS

=25 V, V

=0 V,

=25 °C

0.1

µA

=25 V, V

=0 V,

=125 °C

100

Gate-source leakage current

GSS

=20 V, V

=0 V

100

Drain-source on-state resistance

DS(on)

=4.5 V, I

=20 A

17.5

21.9

=10 V, I

=30 A

10.7

12.8

Gate resistance

0.9

Transconductance

|>2|I

DS(on)max

=30 A

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

Current is limited by bondwire; with an R

thJC

=3.2 K/W the chip is able to carry 47 A.

See figure 3

j,max

=150 °C and duty cycle D <0.25 for V

<-5 V

J-STD20 and JESD22

Rev. 1.7

page 2

2004-05-24

IPD13N03LA IPF13N03LA

IPS13N03LA IPU13N03LA

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

iss

784

1043

Output capacitance

oss

303

402

Reverse transfer capacitance

rss

Turn-on delay time

d(on)

5.4

8.0

Rise time

4.6

6.9

Turn-off delay time

d(off)

Fall time

2.6

3.9

Gate Charge Characteristics

Gate to source charge

2.7

3.6

Gate charge at threshold

g(th)

1.3

1.7

Gate to drain charge

1.8

2.7

Switching charge

3.3

4.7

Gate charge total

6.3

8.3

Gate plateau voltage

plateau

3.4

Gate charge total, sync. FET

g(sync)

=0.1 V,

=0 to 5 V

5.5

7.3

Output charge

oss

=15 V, V

=0 V

6.6

8.7

Reverse Diode

Diode continous forward current

Diode pulse current

S,pulse

210

Diode forward voltage

=0 V, I

=30 A,

=25 °C

0.95

1.2

Reverse recovery charge

=15 V, I

/dt =400 A/µs

See figure 16 for gate charge parameter definition

=25 °C

Values

=0 V, V

=15 V,

f =1 MHz

=15 V, V

=10 V,

=15 A, R

=2.7

=15 V, I

=15 A,

=0 to 5 V

Rev. 1.7

page 3

2004-05-24

IPD13N03LA IPF13N03LA

IPS13N03LA IPU13N03LA

1 Power dissipation

2 Drain current

tot

=f(T

)

=f(T

); V

10 V

3 Safe operating area

4 Max. transient thermal impedance

=f(V

); T

=25 °C; D =0

thJC

=f(t

)

parameter: t

parameter: D =t

1 µs

10 µs

100 µs

1 ms

10 ms

100

1000

0.1

100

[V]

[A]

limited by on-state
resistance

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

-1

-2

-3

-4

-5

-6

0.01

0.1

[s]

thJ

[K/W]

100

150

200

[°C]

tot

[W]

100

150

200

[°C]

[A]

Rev. 1.7

page 4

2004-05-24

IPD13N03LA IPF13N03LA

IPS13N03LA IPU13N03LA

5 Typ. output characteristics

6 Typ. drain-source on resistance

=f(V

); T

=25 °C

DS(on)

=f(I

); T

=25 °C

parameter: V

7 Typ. transfer characteristics

8 Typ. forward transconductance

=f(V

); |V

|>2|I

DS(on)max

=f(I

); T

=25 °C

parameter: T

3 V

3.2 V

3.5 V

3.8 V

4.1 V

4.5 V

10 V

[A]

(on)

]

25 °C

175 °C

[V]

[A]

[S]

2.8 V

3 V

3.2 V

3.5 V

3.8 V

4.1 V

4.5 V

10 V

[V]

[A]

Rev. 1.7

page 5

2004-05-24

IPD13N03LA IPF13N03LA

IPS13N03LA IPU13N03LA

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

DS(on)

=f(T

); I

=30 A; V

=10 V

GS(th)

=f(T

); V

parameter: I

11 Typ. Capacitances

12 Forward characteristics of reverse diode

C =f(V

); V

=0 V; f =1 MHz

=f(V

)

parameter: T

typ

98 %

-60

-20

100

140

180

[°C]

(on)

]

20 µA

200 µA

0.5

1.5

2.5

-60

-20

100

140

180

[°C]

(th)

[V]

Ciss

Coss

Crss

100

1000

10000

[V]

[pF]

25 °C

175 °C

25 °C, 98%

175 °C, 98%

100

1000

0.0

0.5

1.0

1.5

2.0

[V]

[A]

Rev. 1.7

page 6

2004-05-24

IPD13N03LA IPF13N03LA

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13 Avalanche characteristics

14 Typ. gate charge

=f(t

); R

=25

=f(Q

gate

); I

=25 A pulsed

parameter: T

j(start)

parameter: V

15 Drain-source breakdown voltage

16 Gate charge waveforms

BR(DSS)

=f(T

); I

=1 mA

5 V

15 V

20 V

gate

[nC]

[V]

-60

-20

100

140

180

[°C]

BR(DS

)

[V]

gate

g s(th)

g(th)

g s

g d

25 °C

100 °C

150 °C

100

1000

[µs]

[A]

Rev. 1.7

page 7

2004-05-24

IPD13N03LA IPF13N03LA

IPS13N03LA IPU13N03LA

Published by

Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).

Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.

Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.7

page 11

2004-05-24

Part Number IPx13N03LA