IPB10N03LB
Opti
MOS
®
2 Power-Transistor
Features
· Ideal for high-frequency dc/dc converters
· Qualified according to JEDEC
1)
for target applications
· N-channel - Logic level
· Excellent gate charge x R
DS(on)
product (FOM)
· Very low on-resistance R
DS(on)
· Superior thermal resistance
· 175 °C operating temperature
· dv /dt rated
· Pb-free lead plating; RoHS compliant
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
50
A
T
C
=100 °C
41
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
200
Avalanche energy, single pulse
E
AS
I
D
=50 A, R
GS
=25
57
mJ
Reverse diode dv /dt
dv /dt
I
D
=50 A, V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=175 °C
6
kV/µs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
58
W
Operating and storage temperature
T
j
, T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1)
J-STD20 and JESD22
Value
V
DS
30
V
R
DS(on),max
9.6
m
I
D
50
A
Product Summary
PG-TO263-3
Type
Package
Ordering Code
Marking
IPB10N03LB
PG-TO263-3
10N03LB
Rev. 0.92
page 1
2005-10-27
IPB10N03LB
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.6
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
62
6 cm
2
cooling area
5)
-
-
40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
30
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=20 µA
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 °C
-
0.1
1
µA
V
DS
=30 V, V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=25 A
-
11.8
14.7
m
V
GS
=10 V, I
D
=50 A
-
8.0
9.6
Gate resistance
R
G
-
1.3
-
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
48
-
S
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
1)
Current is limited by bondwire; with an R
thJC
=2.6 K/W the chip is able to carry 58 A.
3)
See figure 3
4)
T
j,max
=150 °C and duty cycle D <0.25 for V
GS
<-5 V
Rev. 0.92
page 2
2005-10-27
IPB10N03LB
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
1232
1639
pF
Output capacitance
C
oss
-
440
586
Reverse transfer capacitance
C
rss
-
59
88
Turn-on delay time
t
d(on)
-
5
7
ns
Rise time
t
r
-
4
6
Turn-off delay time
t
d(off)
-
18
26
Fall time
t
f
-
3.0
4.5
Gate Charge Characteristics
6)
Gate to source charge
Q
gs
-
4.2
5.6
nC
Gate charge at threshold
Q
g(th)
-
2.0
2.6
Gate to drain charge
Q
gd
-
2.6
4.0
Switching charge
Q
sw
-
4.9
7
Gate charge total
Q
g
-
10
13
Gate plateau voltage
V
plateau
-
3.4
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
8
11
nC
Output charge
Q
oss
V
DD
=15 V, V
GS
=0 V
-
10
13
Reverse Diode
Diode continous forward current
I
S
-
-
50
A
Diode pulse current
I
S,pulse
-
-
200
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=50 A,
T
j
=25 °C
-
0.99
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V, I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
10
nC
6)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=15 V,
f =1 MHz
V
DD
=15 V, V
GS
=10 V,
I
D
=25 A, R
G
=2.7
V
DD
=15 V, I
D
=25 A,
V
GS
=0 to 5 V
Rev. 0.92
page 3
2005-10-27
IPB10N03LB
1 Power dissipation
2 Drain current
P
tot
=f(T
C
)
I
D
=f(T
C
); V
GS
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 °C; D =0
Z
thJC
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
0.001
0.01
0.1
1
10
0
0
0
0
0
0
1
t
p
[s]
Z
thJ
C
[K/W]
0
10
20
30
40
50
60
70
0
50
100
150
200
T
C
[°C]
P
tot
[W]
0
20
40
60
0
50
100
150
200
T
C
[°C]
I
D
[A]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Rev. 0.92
page 4
2005-10-27
IPB10N03LB
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C
R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
3 V
3.2 V
3.5 V
3.8 V
4.1 V
4.5 V
10 V
0
5
10
15
20
25
30
35
40
45
50
0
20
40
60
80
100
I
D
[A]
R
DS
(on)
[m
]
25 °C
175 °C
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
V
GS
[V]
I
D
[A]
0
10
20
30
40
50
60
70
80
0
20
40
60
80
I
D
[A]
g
fs
[S]
2.8 V
3 V
3.2 V
3.5 V
3.8 V
4.1 V
4.5 V
10 V
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
V
DS
[V]
I
D
[A]
Rev. 0.92
page 5
2005-10-27
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