2003-01-17
Page 1
IPP10N03L
IPB10N03L
Opti
MOS
®
Buck converter series
Product Summary
V
DS
30
V
R
DS(on)
max. SMD version
8.9
m
I
D
73
A
Feature
·
N-Channel
·
Logic Level
·
Low On-Resistance R
DS(on)
·
Excellent Gate Charge x R
DS(on)
product (FOM)
·
Superior thermal resistance
·
175°C operating temperature
·
Avalanche rated
·
dv/dt rated
·
Ideal for fast switching buck converters
P- TO263 -3-2
P- TO220 -3-1
Marking
10N03L
10N03L
Type
Package
Ordering Code
IPP10N03L
P- TO220 -3-1 Q67042-S4040
IPB10N03L
P- TO263 -3-2 Q67040-S4346
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
1)
T
C
=25°C
I
D
73
63
A
Pulsed drain current
T
C
=25°C
I
D puls
292
Avalanche energy, single pulse
I
D
=30A, V
DD
=25V, R
GS
=25
E
AS
25
mJ
Repetitive avalanche energy, limited by T
jmax
2)
E
AR
10
Reverse diode dv/dt
I
S
=73A, V
DS
=24, di/dt=200A/µs, T
jmax
=175°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
107
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
2003-01-17
Page 2
IPP10N03L
IPB10N03L
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
0.9
1.4
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
30
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=60µA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=30V, V
GS
=0V, T
j
=25°C
V
DS
=30V, V
GS
=0V, T
j
=175°C
I
DSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=36A
V
GS
=4.5V, I
D
=36A, SMD version
R
DS(on)
-
-
9.9
9.5
13.4
13.1
m
Drain-source on-state resistance
4)
V
GS
=10V, I
D
=36A
V
GS
=10V, I
D
=36A, SMD version
R
DS(on)
-
-
6.8
6.5
9.2
8.9
1Current limited by bondwire ; with an R
thJC
= 1.4K/W the chip is able to carry I
D
= 88A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
2003-01-17
Page 3
IPP10N03L
IPB10N03L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=63A
32
63
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
-
1290 1710 pF
Output capacitance
C
oss
-
500
670
Reverse transfer capacitance
C
rss
-
130
190
Gate resistance
R
G
-
1.4
-
Turn-on delay time
t
d(on)
V
DD
=15V, V
GS
=10V,
I
D
=18A,
R
G
=4.7
-
7.7
11.6 ns
Rise time
t
r
-
20
30
Turn-off delay time
t
d(off)
-
31.5
47.3
Fall time
t
f
-
19
28.5
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=15V, I
D
=36A
-
4
5
nC
Gate to drain charge
Q
gd
-
10.6
13.3
Gate charge total
Q
g
V
DD
=15V, I
D
=36A,
V
GS
=0 to 5V
-
19
23.8
Output charge
Q
oss
V
DS
=15V, I
D
=36A,
V
GS
=0V
-
18.2
22.8 nC
Gate plateau voltage
V
(plateau) V
DD
=15V, I
D
=36A
-
3.6
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
73
A
Inv. diode direct current, pulsed
I
SM
-
-
292
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=73A
-
0.96
1.28 V
Reverse recovery time
t
rr
V
R
=15V, I
F=
l
S
,
di
F
/dt=100A/µs
-
32.9
41.2 ns
Reverse recovery charge
Q
rr
-
33
41
nC
2003-01-17
Page 4
IPP10N03L
IPB10N03L
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80 100 120 140 160
°C
190
T
C
0
10
20
30
40
50
60
70
80
90
100
W
120
IPP10N03L
P
tot
2 Drain current
I
D
= f (T
C
)
parameter: V
GS
10 V
0
20
40
60
80 100 120 140 160
°C
190
T
C
0
10
20
30
40
50
60
A
80
IPP10N03L
I
D
4 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
IPP10N03L
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
IPP10N03L
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
10 µs
tp = 1.8µs
2003-01-17
Page 5
IPP10N03L
IPB10N03L
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
20
40
60
80
100
120
140
A
170
IPP10N03L
I
D
VGS [V]
a
a
3.0
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
g
g
6.0
h
P
tot
= 107W
h
10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0
20
40
60
80
100
A
140
I
D
0
0.004
0.008
0.012
0.016
0.02
0.024
0.032
IPP10N03L
R
DS(on)
V
GS
[V] =
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
g
g
6.0
h
h
10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0
1
2
3
4
V
6
V
GS
0
20
40
60
80
100
A
140
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: g
fs
0
25
50
75
100
A
150
I
D
0
10
20
30
40
50
60
S
80
g
fs
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