2001 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA
www.infineon.com/opto · 1-888-Infineon (1-888-463-4636)
2187
February 12, 20001-12
FEATURES
· Each Channel: Guaranteed CTR Symmetry,
2:1 Maximum
· Bidirectional AC Input
· SOIC-8 Surface Mountable Package
· Standard Lead Spacing, .05"
· Available only on Tape and Reel Option
(Conforms to EIA Standard 481-2)
DESCRIPTION
The ILD256T is a dual channel optocoupler. Each
channel consists of two infrared emitters con-
nected in anti-parallel and coupled to a silicon
NPN phototransistor detector.
These circuit elements are constructed with a
standard SOIC-8A footprint.
The product is well suited for telecom applica-
tions such as ring detection or off/on hook status,
given its bidirectional LED input and guaranteed
current transfer ratio (CTR) of 20% at
I
F
= 10 mA.
Maximum Ratings
Emitter
(Each Channel)
Continuous Forward Current .......................30 mA
Power Dissipation at 25
°
C ......................... 50 mW
Derate Linearly from 25
°
C.................. 0.66 mW/
°
C
Detector
(Each Channel)
Collector-Emitter Breakdown Voltage ............ 70 V
Emitter-Collector Breakdown Voltage ........... 7.0 V
Power Dissipation ................................... 125 mW
Derate Linearly from 25
°
C.................. 1.67 mW/
°
C
Package
Total Package Dissipation at 25
°
C Ambient
(LED + Detector) .................................. 300 mW
Derate Linearly from 25
°
C.................... 4.0 mW/
°
C
Storage Temperature ................ 55
°
C to +150
°
C
Operating Temperature .............55
°
C to +100
°
C
Soldering Time at 260
°
C ........................... 10 sec.
Table 1. Characteristics
T
A
=25
°
C
Sym.
Min.
Typ.
Max.
Unit
Condition
Emitter (Each Channel)
Forward Voltage
V
F
--
1.2
1.55
V
I
F
=
±
10 mA
Reverse Current
I
R
--
0.1
100
mA
V
R
=6.0 V
Detector (Each Channel)
Breakdown Voltage
BV
CEO
70
--
--
V
I
C
=10
µ
A
BV
ECO
7.0
--
--
V
I
E
=10
µ
A
Leakage Current,
Collector-Emitter
I
CEO
--
5.0
50
nA
V
CE
=10 V
Package
DC Current Transfer
CTR
20
--
--
%
I
F
=
±
10 mA
V
CE
=5.0 V
Symmetry
CTR at + 10 mA
CTR at -10 mA
--
0.5
1.0
2.0
--
--
Saturation Voltage,
Collector-Emitter
V
CE
sat
--
--
0.4
--
I
F
=
±
16 mA
I
C
=2.0 mA
Isolation Voltage,
Input to Output
V
IO
3000
--
--
V
RMS
t=1.0 sec.
Dimensions in inches (mm)
40
°
.240
(6.10)
.154
±.002
(3.91
±.05)
.050(1.27) Typ.
.016 (.41)
.230
±.002
(5.84
±.05)
.004 (.10)
.008 (.20)
Lead coplanarity
±.001 Max.
.015
±.002
(.38
±.05)
.008 (.20)
7
°
.0585
±.002
(1.49
±.05)
.125
±.002
(3.18
±.05)
.120
±.002
(3.05
±.05)
CL
.020
±.004
(.51
±.10)
2 Plcs.
R.010
(.25) Max.
.040 (1.02)
1
2
3
4
8
7
6
5
C
E
C
E
A/K
K/A
A/K
K/A
5
°Max.
Pin One I.D.
ILD256T
Dual AC Input Phototransistor
Small Outline
Surface Mount Optocoupler
2001 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA
ILD256T
www.infineon.com/opto · 1-888-Infineon (1-888-463-4636)
2188
February 12, 20001-12
Figure 1. LED forward current versus forward voltage
Figure 2. Forward voltage versus forward current
Figure 3. Peak LED current versus duty factor, Tau
Figure 4. Normalized CTR versus If and Ta
Figure 5. Normalized saturated CTR
Figure 6. Normalized CTR
cb
Figure 7. Photocurrent versus LED current
Figure 8. Base current versus If and HFE
-1.5 -1.0
-0.5
0.0
0.5
1.0
1.5
60
40
20
0
-20
-40
-60
-55
°C
V
F
- LED Forward Voltage - V
I
F
- LED Forwar
d Current - mA
85
°C
25
°C
.1
1
10
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
F
- Forward Current - mA
V
F
- Forwar
d
V
olta
g
e
-
V
T
A
= -55
°C
T
A
= 100
°C
T
A
= 25
°C
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10000
1000
100
10
t - LED Pulse Duration - s
If(pk) - P
eak LED Current - mA
.005
DF = /t
.05
.02
.01
.1
.2
.5
Duty Factor
t
.1
1
10
100
2.0
1.5
1.0
0.5
0.0
I
F
- LED Current - mA
Normaliz
ed CTR
T
A
= 25
°C
T
A
= 50
°C
T
A
= 70
°C
T
A
= 100
°C
Normalized to:
I
F
= 10 mA, V
CE
=10V
T
A
= 25
°C
.1
1
10
100
1.0
0.8
0.6
0.4
0.2
0.0
I
F
- LED Current - mA
Normaliz
ed CTR
Normalized to:
I
F
= 10 mA, V
CE
=10 V
T
A
= 25
°C
V
CE(sat)
=0.4 V
T
A
= 25
°C
T
A
= 50
°C
T
A
= 70
°C
T
A
= 100
°C
.1
1
10
100
1.5
1.0
0.5
0.0
T
A
= 25
°C
T
A
= 50
°C
T
A
= 70
°C
I
F
- LED Current - mA
Normaliz
ed CTRcb
Normalized to:
I
F
= 10 mA
T
A
= 25
°C
.1
1
10
100
1000
100
10
1
.1
25
°C
70
°C
I
F
- LED Current - mA
I
CB
- Photocurrent -
µ
A
1
10
100
1000
700
600
500
400
300
200
100
100
10
1
.1
I
B
- Base Current -
µA
HFE -
T
ransistor Gain
I
F
- LED Current - mA
V
CE
=0.4 V, T
A
=25
°C
2001 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA
ILD256T
www.infineon.com/opto · 1-888-Infineon (1-888-463-4636)
2189
February 12, 20001-12
Figure 9. Normalized HFE versus I
b
, T
a
Figure 10. Normalized saturated HFE versus I
b
1
10
100
1000
1.2
1.0
0.8
0.6
0.4
NHFE -20
°C
NHFE 25
°C
NHFE 50
°C
NHFE 70
°C
I
B
- Base Current -
µA
Normaliz
ed HFE
Normalized to:
I
B
= 10
µA
T
A
= 25
°C
V
CE
= 10 V
0.4
0.5
0.6
0.7
0.8
1000
100
10
1
.1
.01
.001
V
BE
- Base Emitter Voltage - V
I
B
- Base Current -
µ
A
T
A
= 25
°C
Figure 11. Base emitter voltage versus base
Figure 12. Collector-emitter leakage current versus
temperature
1
10
100
1000
1.5
1.0
0.5
0.0
T
A
= -20
°C
T
A
= 25
°C
T
A
= 50
°C
T
A
= 70
°C
I
B
- Base Current -
µA
Normaliz
ed Saturated HFE
Normalized to:
HFE at V
CE
= 10V, I
CB
= 10
µA
T
A
= 25
°C
V
CE(sat)
= 0.4 V
-20
0
20
40
60
80
100
10
5
10
4
10
3
10
2
10
1
10
0
10
-1
10
-2
T
A
- Ambient Temperature -
°C
I
CEO
- Collector
-Emitter - nA
Typical
V
CE
= 10 V
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