Data Sheet
1
05.99
SIPMOS
®
Power Transistor
· N channel
· Enhancement mode
· Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BUZ 72 A
100 V
9 A
0.25
TO-220 AB
C67078-S1313-A3
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 25 °C
I
D
9
A
Pulsed drain current
T
C
= 25 °C
I
Dpuls
36
Avalanche current,limited by T
jmax
I
AR
10
Avalanche energy,periodic limited by T
jmax
E
AR
7.9
mJ
Avalanche energy, single pulse
I
D
= 10 A, V
DD
= 25 V, R
GS
= 25
L
= 885 µH, T
j
= 25 °C
E
AS
59
Gate source voltage
V
GS
±
20
V
Power dissipation
T
C
= 25 °C
P
tot
40
W
Operating temperature
T
j
-55 ... + 150
°C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
3.1
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
BUZ 72A
BUZ 72A
Data Sheet
2
05.99
Electrical Characteristics,
at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA, T
j
= 25 °C
V
(BR)DSS
100
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
3
4
Zero gate voltage drain current
V
DS
= 100 V, V
GS
= 0 V, T
j
= 25 °C
V
DS
= 100 V, V
GS
= 0 V, T
j
= 125 °C
I
DSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
V
GS
= 20 V, V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-resistance
V
GS
= 10 V, I
D
= 6 A
R
DS(on)
-
0.2
0.25
BUZ 72A
Data Sheet
3
05.99
Electrical Characteristics,
at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 6 A
g
fs
3
4.3
-
S
Input capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
-
400
530
pF
Output capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
oss
-
120
180
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
rss
-
70
105
Turn-on delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 3 A
R
GS
= 50
t
d(on)
-
10
15
ns
Rise time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 3 A
R
GS
= 50
t
r
-
45
70
Turn-off delay time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 3 A
R
GS
= 50
t
d(off)
-
55
75
Fall time
V
DD
= 30 V, V
GS
= 10 V, I
D
= 3 A
R
GS
= 50
t
f
-
40
55
BUZ 72A
Data Sheet
4
05.99
Electrical Characteristics,
at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
I
S
-
-
9
A
Inverse diode direct current,pulsed
T
C
= 25 °C
I
SM
-
-
36
Inverse diode forward voltage
V
GS
= 0 V, I
F
= 20 A
V
SD
-
1.4
1.6
V
Reverse recovery time
V
R
= 30 V, I
F=
l
S,
di
F
/dt = 100 A/µs
t
rr
-
170
-
ns
Reverse recovery charge
V
R
= 30 V, I
F=
l
S,
di
F
/dt = 100 A/µs
Q
rr
-
0.3
-
µC
BUZ 72A
Data Sheet
5
05.99
Drain current
I
D
=
(
T
C
)
parameter:
V
GS
10 V
0
20
40
60
80
100
120
°C
160
T
C
0
1
2
3
4
5
6
7
8
A
10
I
D
Power dissipation
P
tot
=
(
T
C
)
0
20
40
60
80
100
120
°C
160
T
C
0
5
10
15
20
25
30
35
W
45
P
tot
Safe operating area
I
D
=
(
V
DS
)
parameter:
D = 0.01, T
C
= 25°C
-1
10
0
10
1
10
2
10
A
I
D
10
0
10
1
10
2
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p
= 52.0µs
Transient thermal impedance
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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