Data Sheet
1
05.99
SIPMOS
®
Power Transistor
· P channel
· Enhancement mode
· Avalanche rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on
)
Package
Ordering Code
BUZ 172
-100 V
-5.5 A
0.6
TO-220 AB
C67078-S1451-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 37 °C
I
D
-5.5
A
Pulsed drain current
T
C
= 25 °C
I
Dpuls
-22
Avalanche energy, single pulse
I
D
= -5.5 A,
V
DD
= -25 V,
R
GS
= 25
L = 8.4 mH, T
j
= 25 °C
E
AS
170
mJ
Gate source voltage
V
GS
±
20
V
Power dissipation
T
C
= 25 °C
P
tot
40
W
Operating temperature
T
j
-55 ... + 150
°C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
3.1
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
BUZ 172
BUZ 172
Data Sheet
2
05.99
Electrical Characteristics, at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -0.25 mA,
T
j
= 25 °C
V
(BR)DSS
-100
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
-2.1
-3
-4
Zero gate voltage drain current
V
DS
= -100 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -100 V,
V
GS
= 0 V,
T
j
= 125 °C
I
DSS
-
-
-10
-0.1
-100
-1
µA
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
I
GSS
-
-10
-100
nA
Drain-Source on-resistance
V
GS
= -10 V,
I
D
= -3.7 A
R
DS(on)
-
0.4
0.6
BUZ 172
Data Sheet
3
05.99
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= -3.7 A
g
fs
1
2
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
iss
-
800
1200
pF
Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
oss
-
220
330
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
rss
-
90
140
Turn-on delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -2.8 A
R
GS
= 50
t
d(on)
-
20
30
ns
Rise time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -2.8 A
R
GS
= 50
t
r
-
120
180
Turn-off delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -2.8 A
R
GS
= 50
t
d(off)
-
70
90
Fall time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -2.8 A
R
GS
= 50
t
f
-
55
75
BUZ 172
Data Sheet
4
05.99
Electrical Characteristics, at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
I
S
-
-
-5.5
A
Inverse diode direct current,pulsed
T
C
= 25 °C
I
SM
-
-
-22
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -11 A
V
SD
-
-1
-1.3
V
Reverse recovery time
V
R
= -30 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/µs
t
rr
-
200
-
ns
Reverse recovery charge
V
R
= -30 V,
I
F=
l
S,
d
i
F
/d
t = 100 A/µs
Q
rr
-
0.75
-
µC
BUZ 172
Data Sheet
5
05.99
Power dissipation
P
tot
=
(
T
C
)
0
20
40
60
80
100
120
°C
160
T
C
0
5
10
15
20
25
30
35
W
45
P
tot
Drain current
I
D
=
(
T
C
)
parameter:
V
GS
-10 V
0
20
40
60
80
100
120
°C
160
T
C
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
A
-6.0
I
D
Safe operating area
I
D
=
(
V
DS
)
parameter:
D = 0.01, T
C
= 25°C
-1
-10
0
-10
1
-10
2
-10
A
I
D
-10
0
-10
1
-10
2
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 25.0µs
Transient thermal impedance
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
BUZ 172
Data Sheet
6
05.99
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 µs
0
-2
-4
-6
-8
V
-11
V
DS
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
A
-13
I
D
V
GS [V]
a
a
-4.0
b
b
-4.5
c
c
-5.0
d
d
-5.5
e
e
-6.0
f
f
-6.5
g
g
-7.0
h
h
-7.5
i
i
-8.0
j
j
-9.0
k
k -10.0
l
P
tot
= 40W
l -20.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
V
GS
0
-2
-4
-6
-8
A
-12
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.8
R
DS (on)
V
GS
[V] =
a
-4.0
V
GS
[V] =
a
-4.5
V
GS
[V] =
a
-5.0
V
GS
[V] =
a
a
-5.5
b
b
-6.0
c
c
-6.5
d
d
-7.0
e
e
-7.5
f
f
-8.0
g
g
-9.0
h
h
-10.0
i
i
-20.0
Typ. transfer characteristics
I
D
= f (V
GS
)
parameter:
t
p
= 80 µs
V
DS
2 x
I
D
x
R
DS(on)max
0
-1
-2
-3
-4
-5
-6
-7
-8
V
-10
V
GS
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
A
-14
I
D
Typ. forward transconductance
g
fs
= f
(
I
D
)
parameter:
t
p
= 80 µs,
V
DS
2 x
I
D
x R
DS(on)max
0
-2
-4
-6
-8
A
-12
I
D
0.0
0.4
0.8
1.2
1.6
2.0
2.4
S
3.2
g
fs
BUZ 172
Data Sheet
7
05.99
Drain-source on-resistance
R
DS (on)
=
(
T
j
)
parameter:
I
D
= -3.7 A,
V
GS
= -10 V
-60
-20
20
60
100
°C
160
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.7
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th)
=
(
T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= 1 mA
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
V
-4.6
V
GS(th)
-60
-20
20
60
100
°C
160
T
j
2%
typ
98%
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS
= 0V,
f = 1MHz
0
-5
-10
-15
-20
-25
-30
V
-40
V
DS
-2
10
-1
10
0
10
1
10
C
nF
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F
=
(
V
SD
)
parameter:
T
j
, t
p
= 80 µs
-1
-10
0
-10
1
-10
2
-10
A
I
F
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
-3.0
V
SD
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
BUZ 172
Data Sheet
8
05.99
Avalanche energy
E
AS
=
(
T
j
)
parameter:
I
D
= -5.5 A,
V
DD
= -25 V
R
GS
= 25
,
L = 8.4 mH
20
40
60
80
100
120
°C
160
T
j
0
20
40
60
80
100
120
140
mJ
180
E
AS
Drain-source breakdown voltage
V
(BR)DSS
=
(
T
j
)
-60
-20
20
60
100
°C
160
T
j
-90
-92
-94
-96
-98
-100
-102
-104
-106
-108
-110
-112
-114
V
-120
V
(BR)DSS
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