02.12.1998
Semiconductor Group
Page 1
HITFET
®
BTS 949
Smart Lowside Power Switch
Features
·
Logic Level Input
·
Input Protection (ESD)
·
Thermal Shutdown
·
Overload protection
·
Short circuit protection
·
Overvoltage protection
·
Current limitation
·
Maximum current adjustable with external resistor
·
Current sense
·
Status feedback with external input resistor
·
Analog driving possible
Product Summary
Drain source voltage
V
60
V
DS
On-state resistance
R
DS(on)
18
m
A
Current limit
I
D(lim)
9.5
Nominal load current
A
I
D(ISO)
19
Clamping energy
mJ
E
AS
6000
Application
·
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
·
µC compatible power switch for 12 V and 24 V DC applications
·
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
®
chip on chip tech-
nology. Fully protected by embedded protected functions.
protection
Overvoltage
Drain
IN
ESD
HITFET
®
Source
Current
1
3
Over-
protection
temperature
Short circuit
protection
+
dv/dt
limitation
limitation
Vbb
Short circuit
protection
LOAD
2
4
CC
NC
R
CC
5
Overload
protection
M
02.12.1998
Semiconductor Group
Page 2
BTS 949
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Unit
Value
Drain source voltage
V
DS
60
V
Drain source voltage for short circuit protection
R
CC
= 0
without
R
CC
V
DS(SC)
15
50
Continuous input current
1)
-0.2V
V
IN
10V
V
IN
< -0.2V or
V
IN
> 10V
I
IN
no limit
|
I
IN
|
2
mA
Operating temperature
T
j
°C
- 40 ... +150
Storage temperature
T
stg
- 55 ... +150
Power dissipation
T
C
= 25 °C
240
W
P
tot
Unclamped single pulse inductive energy
I
D(ISO)
= 19 A
6000
mJ
E
AS
Electrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
3000
V
Load dump protection
V
LoadDump
2)
=
V
A
+
V
S
V
IN
=low or high;
V
A
=13.5 V
t
d
= 400 ms,
R
I
= 2
,
I
D
=0,5*19A
t
d
= 400 ms,
R
I
= 2
,
I
D
= 19A
110
92
V
LD
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
R
thJC
0.7
K/W
75
R
thJA
junction - ambient:
SMD version, device on PCB:
3)
R
thJA
45
1
A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2
V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
02.12.1998
Semiconductor Group
Page 3
BTS 949
Electrical Characteristics
Parameter
Symbol
Unit
Values
max.
typ.
min.
at T
j
=25°C, unless otherwise specified
Characteristics
-
Drain source clamp voltage
T
j
= - 40 ...+ 150°C,
I
D
= 10 mA
73
V
V
DS(AZ)
60
-
I
DSS
-
Off state drain current
V
DS
= 32 V,
T
j
= -40...+150 °C,
V
IN
= 0 V
25
µA
1.7
2.2
V
IN(th)
1.3
Input threshold voltage
I
D
= 3,9 mA
V
-
100
µA
I
IN(1)
-
Input current - normal operation,
I
D
<
I
D(lim)
:
V
IN
= 10 V
400
Input current - current limitation mode,
I
D
=
I
D(lim)
:
V
IN
= 10 V
1000
I
IN(2)
-
3000
I
IN(3)
1500
Input current - after thermal shutdown,
I
D
=0 A:
V
IN
= 10 V
6000
-
-
-
-
I
IN(H)
500
300
Input holding current after thermal shutdown
T
j
= 25 °C
T
j
= 150 °C
18
30
22
44
m
R
DS(on)
-
-
On-state resistance
I
D
= 19 A,
V
IN
= 5 V,
T
j
= 25 °C
I
D
= 19 A,
V
IN
= 5 V,
T
j
= 150 °C
14
25
On-state resistance
I
D
= 19 A,
V
IN
= 10 V,
T
j
= 25 °C
I
D
= 19 A,
V
IN
= 10 V,
T
j
= 150 °C
18
36
R
DS(on)
-
-
-
I
D(ISO)
19
Nominal load current (ISO 10483)
V
IN
= 10 V,
V
DS
= 0.5 V,
T
C
= 85 °C
-
A
02.12.1998
Semiconductor Group
Page 4
BTS 949
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
=25°C, unless otherwise specified
min.
typ.
max.
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V,
V
DS
= 12 V
I
D(SCp)
-
175
-
A
Current limit
1)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 350
µ
s,
T
j
= -40...+150 °C, without
R
CC
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 350
µ
s,
T
j
= -40...+150 °C,
R
CC
= 0
I
D(lim)
9.5
150
19
220
40
270
Dynamic Characteristics
µ
s
t
on
Turn-on time
V
IN
to 90%
I
D
:
R
L
= 1
,
V
IN
= 0 to 10 V,
V
bb
= 12 V
40
100
-
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 1
,
V
IN
= 10 to 0 V,
V
bb
= 12 V
-
t
off
70
170
V/µs
Slew rate on 70 to 50%
V
bb
:
R
L
= 1
,
V
IN
= 0 to 10 V,
V
bb
= 12 V
G9
'6
GW
RQ
3
1
-
Slew rate off 50 to 70%
V
bb
:
R
L
= 1
,
V
IN
= 10 to 0 V,
V
bb
= 12 V
1
3
G9
'6
GW
RII
-
Protection Functions
T
jt
°C
Thermal overload trip temperature
165
-
150
E
AS
Unclamped single pulse inductive energy
I
D
= 19 A,
T
j
= 25 °C,
V
bb
= 32 V
I
D
= 19 A,
T
j
= 150 °C,
V
bb
= 32 V
-
-
-
-
6000
1800
mJ
Inverse Diode
V
SD
Inverse diode forward voltage
I
F
= 5*19A,
t
m
= 300
µ
S,
V
IN
= 0 V
1,1
-
-
V
1
Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the
application, these values might be exceeded for max. 50 µs in case of short circuit occurs while the
device is on condition
02.12.1998
Semiconductor Group
Page 5
BTS 949
Block Diagramm
Terms
Inductive and overvoltage output clamp
HITFET
IN
CC
D
V IN
ID
VDS
1
4
5
IIN
3
S
Vbb
RCC
RL
CC
V
HITFET
V
Z
D
S
Short circuit behaviour
The ground lead impedance of
R
CC
should be as low as possible
V IN
I D
I D(SCp)
t 0
tm
t 2
I D(Lim)
t 1
Input circuit (ESD protection)
IN
ESD-ZD
I
Source
ESD zener diodes are not designed
for DC current > 2 mA @
V
IN
>10V.
t0: Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
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