2000-04-14
Page 1
BSS84PW
Preliminary data
SIPMOS
®
Small-Signal-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
Logic Level
·
d
v/dt rated
Product Summary
Drain source voltage
V
DS
-60
V
Drain-source on-state resistance
R
DS(on)
8
W
Continuous drain current
I
D
-0.15
A
1
3
VSO05561
2
Pin 1
PIN 2
PIN 3
G
S
D
Type
Package
Ordering Code
BSS84PW
SOT-323
Q67042-S4028
Marking
YBs
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
= 25 °C
I
D
-0.15
A
Pulsed drain current
T
A
= 25 °C
I
D puls
-0.6
Avalanche energy, single pulse
I
D
= -0.15 A ,
V
DD
= -25 V,
R
GS
= 25
W
E
AS
2.61
mJ
Avalanche energy, periodic limited by
T
jmax
E
AR
0.03
Reverse diode d
v/dt
I
S
= -0.15 A,
V
DS
= -48 V, d
i/dt = 200 A/µs,
T
jmax
= 150 °C
d
v/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
= 25 °C
P
tot
0.3
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
2000-04-14
Page 2
BSS84PW
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
R
thJS
-
-
110
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
420
350
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0 V,
I
D
= -250 µA
V
(BR)DSS
-60
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -20 µA
V
GS(th)
-1
-1.5
-2
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 125 °C
I
DSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
I
GSS
-
-10
-100
nA
Drain-source on-state resistance
V
GS
= -2.7 V,
I
D
= -0.01 A
R
DS(on)
-
10.5
25
W
Drain-source on-state resistance
V
GS
= -4.5 V,
I
D
= -0.12 A
R
DS(on)
-
6.9
12
Drain-source on-state resistance
V
GS
= -10 V,
I
D
= -0.15 A
R
DS(on)
-
4.6
8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2000-04-14
Page 3
BSS84PW
Preliminary data
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
£
2*
I
D
*
R
DS(on)max
,
I
D
=0.15A
0.08
0.16
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=-25V,
f=1MHz
-
15.3
19.1
pF
Output capacitance
C
oss
-
5.8
7.3
Reverse transfer capacitance
C
rss
-
3
3.8
Turn-on delay time
t
d(on)
V
DD
=-30V,
V
GS
=-4.5V,
I
D
=-0.12A,
R
G
=25
W
-
6.7
10
ns
Rise time
t
r
-
16.2
24.3
Turn-off delay time
t
d(off)
-
8.6
12.9
Fall time
t
f
-
20.5
30.8
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-48V,
I
D
=-0.15A
-
0.25
0.38
nC
Gate to drain charge
Q
gd
-
0.3
0.45
Gate charge total
Q
g
V
DD
=-48V,
I
D
=-0.15A,
V
GS
=0 to -10V
-
1
1.5
Gate plateau voltage
V
(plateau) V
DD
=-48V,
I
D
=-0.15A
-
-3.4
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C
-
-
-0.15
A
Inverse diode direct current,
pulsed
I
SM
-
-
-0.6
Inverse diode forward voltage
V
SD
V
GS
=0V,
I
F
=-0.15A
-
-0.84
-1.12
V
Reverse recovery time
t
rr
V
R
=-30V,
I
F=
l
S
,
d
i
F
/d
t=100A/µs
-
23.6
35.4
ns
Reverse recovery charge
Q
rr
-
11.6
17.4
nC
2000-04-14
Page 4
BSS84PW
Preliminary data
Power Dissipation
P
tot
=
f (T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
W
0.32
BSS84PW
P
tot
Drain current
I
D
=
f (T
A
)
parameter:
V
GS
³
10 V
0
20
40
60
80
100
120
°C
160
T
A
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
A
-0.16
BSS84PW
I
D
Safe operating area
I
D
=
f ( V
DS
)
parameter :
D = 0 , T
A
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS84PW
I
D
R
D
S
(on)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
t
p
= 40.0µs
Transient thermal impedance
Z
thJA
=
f (t
p
)
parameter :
D = t
p
/
T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
3
s
t
p
0
10
1
10
2
10
3
10
K/W
BSS84PW
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2000-04-14
Page 5
BSS84PW
Preliminary data
Typ. output characteristic
I
D
=
f (V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
V
-5.0
V
DS
0.00
-0.04
-0.08
-0.12
-0.16
-0.20
-0.24
-0.28
A
-0.36
BSS84PW
I
D
V
GS [V]
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
P
tot
= 0W
g
-6.0
Typ. drain-source-on-resistance
R
DS(on)
=
f (I
D
)
parameter:
V
GS
0.00
-0.04 -0.08 -0.12 -0.16 -0.20 -0.24
A
-0.30
I
D
0
2
4
6
8
10
12
14
16
18
20
22
W
26
BSS84PW
R
DS(on)
V
GS
[V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-6.0
Typ. transfer characteristics
I
D
=
f ( V
GS
)
V
DS
³
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
V
-5.0
V
GS
0.00
-0.05
-0.10
-0.15
-0.20
A
-0.30
I
D
Typ. forward transconductance
g
fs
= f(
I
D
);
T
j
=25°C
parameter:
g
fs
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30
A
-0.40
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
S
0.22
g
fs
2000-04-14
Page 6
BSS84PW
Preliminary data
Drain-source on-resistance
R
DS(on)
= f(Tj)
parameter:
I
D
= -0.17A,
V
GS
= -10 V
-60
-20
20
60
100
°C
160
T
j
0
2
4
6
8
10
12
W
16
R
DS
(
on)
max.
typ.
Gate threshold voltage
V
GS(th)
=
f (Tj)
parameter:
V
GS
=
V
DS
,
I
D
= -20 µA
-60
-20
20
60
100
°C
180
T
j
0.0
-0.5
-1.0
-1.5
V
-2.5
V
GS(th)
max.
min.
typ.
Typ. capacitances
C = f(V
DS
)
Parameter:
V
GS
=0 V,
f=1 MHz
0
-5
-10
-15
-20
V
-30
V
DS
0
10
1
10
2
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F
=
f (V
SD
)
parameter:
Tj , t
p
= 80 µs
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
-3.0
V
SD
-3
-10
-2
-10
-1
-10
0
-10
A
BSS84PW
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
2000-04-14
Page 7
BSS84PW
Preliminary data
Avalanche energy
E
AS
=
f (T
j
)
par.:
I
D
= -0.15 A ,
V
DD
= -25 V,
R
GS
= 25
W
25
45
65
85
105
125
°C
165
T
j
0.0
0.5
1.0
1.5
2.0
mJ
3.0
E
AS
Typ. gate charge
V
GS
= f (Q
Gate
)
parameter:
I
D
= -0.15 A pulsed
0.0
0.2
0.4
0.6
0.8
1.0
1.2
nC
1.5
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
BSS84PW
V
GS
0,8
V
DS max
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS
=
f (T
j
)
-60
-20
20
60
100
°C
180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSS84PW
V
(BR)DSS
2000-04-14
Page 8
BSS84PW
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.
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