2004-06-02
Page 1
BSP613P
SIPMOS
®
Small-Signal-Transistor
Product Summary
V
DS
-60
V
R
DS(on)
0.13
I
D
-2.9
A
Feature
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
dv/dt rated
·
Ideal for fast switching buck converter
SOT-223
Gate
pin1
Drain
pin 2,4
Source
pin 3
Type
Package
Ordering Code
BSP613P
SOT-223
Q67040-S4190
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-2.9
-2.3
A
Pulsed drain current
T
A
=25°C
I
D puls
-11.6
Avalanche energy, single pulse
I
D
=2.9 A , V
DD
=-25V, R
GS
=25
E
AS
150
mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.18
Reverse diode dv/dt
I
S
=2.9A, V
DS
=-48V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
2004-06-02
Page 2
BSP613P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
R
thJS
-
-
19
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
100
-
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
100
70
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250µA
V
(BR)DSS
-60
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=-1mA
V
GS(th)
-2.1
-3
-4
Zero gate voltage drain current
V
DS
=-60V, V
GS
=0, T
j
=25°C
V
DS
=-60V, V
GS
=0, T
j
=125°C
I
DSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
V
GS
=-20V, V
DS
=0
I
GSS
-
-10
-100
nA
Drain-source on-state resistance
V
GS
=-10V, I
D
=2.9A
R
DS(on)
-
0.11
0.13
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2004-06-02
Page 3
BSP613P
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
|V
DS
|
2*|I
D
|*R
DS(on)max
,
I
D
=2.9A
2.7
5.4
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=-25V,
f=1MHz
-
715
875
pF
Output capacitance
C
oss
-
230
295
Reverse transfer capacitance
C
rss
-
90
120
Turn-on delay time
t
d(on)
V
DD
=-30V, V
GS
=-10V,
I
D
=2.9A, R
G
=2.7
-
6.7
17
ns
Rise time
t
r
-
9
18
Turn-off delay time
t
d(off)
-
26
52
Fall time
t
f
-
7
19
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-48V, I
D
=2.9A
-
2.5
3.8
nC
Gate to drain charge
Q
gd
-
8.9
14.3
Gate charge total
Q
g
V
DD
=-48V, I
D
=2.9A,
V
GS
=0 to -10V
-
22
33
Gate plateau voltage
V
(plateau) V
DD
=-48V, I
D
=2.9A
-
-3.9
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C
-
-
-2.9
A
Inv. diode direct current, pulsed I
SM
-
-
-11.6
Inverse diode forward voltage
V
SD
V
GS
=0V, |I
F
| = |I
S
|
-
-0.8
-1.1
V
Reverse recovery time
t
rr
V
R
=-30V, |I
F
| = |I
S
|,
di
F
/dt=100A/µs
-
37.2
79
ns
Reverse recovery charge
Q
rr
-
59.8
112
nC
2004-06-02
Page 4
BSP613P
1 Power Dissipation
P
tot
= f (
T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
BSP613P
P
tot
2 Drain current
I
D
= f (
T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
°C
160
T
A
0
0.4
0.8
1.2
1.6
2
2.4
A
3.2
BSP613P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSP613P
I
D
R
DS
(on
)
=
V
DS
/
I
D
DC
10 ms
1 ms
tp = 100.0
4 Transient thermal impedance
Z
thJC
= f(t
p
)
parameter: D = t
p
/ T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP613P
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2004-06-02
Page 5
BSP613P
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: Tj =25°C
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
-VDS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
A
7
-I
D
Vgs=3.5V
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 6V
Vgs = 10V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
; Tj = 25 °C
0
1
2
3
4
A
6
-ID
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.5
R
DS(on)
Vgs = 4V
Vgs = 4,5V
Vgs = 5V
Vgs = 6V
Vgs = 10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS|
2 x |I
D|
x R
DS(on)max
parameter: Tj = 25 °C
0
1
2
3
4
5
V
7
-VGS
0
1
2
3
4
5
6
A
8
I D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: Tj = 25 °C
0
1
2
3
4
5
6
7
8
A
10
-ID
0
1
2
3
4
5
6
S
8
g
fs
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