2003-02-21
Page 1
Rev. 1.0
BSP324
SIPMOS
®
Power-Transistor
Product Summary
V
DS
400
V
R
DS(on)
25
I
D
0.17
A
Feature
·
N-Channel
·
Enhancement mode
·
Logic Level
·
dv/dt rated
SOT-223
Marking
BSP324
Type
Package
Ordering Code
Tape and Reel Information
BSP324
SOT-223
Q67000-S215
E6327: 1000 pcs/reel
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
0.17
0.14
A
Pulsed drain current
T
A
=25°C
I
D puls
0.68
Reverse diode dv/dt
I
S
=0.17A, V
DS
=320V, di/dt=200A/µs, T
jmax
=175°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
ESD Sensitivity (HBM) as per MIL-STD 883
Class 1
Power dissipation
T
A
=25°C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
2003-02-21
Page 2
Rev. 1.0
BSP324
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
R
thJS
-
16
25
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
85
45
115
70
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250µA
V
(BR)DSS
400
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=94µA
V
GS(th)
1.3
1.9
2.3
Zero gate voltage drain current
V
DS
=400V, V
GS
=0, T
j
=25°C
V
DS
=400V, V
GS
=0, T
j
=125°C
I
DSS
-
-
0.01
-
0.1
10
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
-
10
100
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.05A
R
DS(on)
-
14.3
22
Drain-source on-state resistance
V
GS
=10V, I
D
=0.17A
R
DS(on)
-
13.6
25
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2003-02-21
Page 3
Rev. 1.0
BSP324
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=0.14A
0.09
0.19
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
-
103
154
pF
Output capacitance
C
oss
-
9.2
13.6
Reverse transfer capacitance
C
rss
-
3.8
5.7
Turn-on delay time
t
d(on)
V
DD
=225V, V
GS
=10V,
I
D
=0.17A, R
G
=6
-
4.6
6.9
ns
Rise time
t
r
-
4.4
6.6
Turn-off delay time
t
d(off)
-
17
25
Fall time
t
f
-
68
102
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=320V, I
D
=0.17A
-
0.35
0.45
nC
Gate to drain charge
Q
gd
-
2.17
2.82
Gate charge total
Q
g
V
DD
=320V, I
D
=0.17A,
V
GS
=0 to 10V
-
4.54
5.9
Gate plateau voltage
V
(plateau) V
DD
=320V, I
D
=0.17A
-
3.6
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C
-
-
0.17
A
Inv. diode direct current, pulsed I
SM
-
-
0.68
Inverse diode forward voltage
V
SD
V
GS
=0, I
F
=0.17A
-
0.8
1.2
V
Reverse recovery time
t
rr
V
R
=200V, I
F=
l
S
,
di
F
/dt=100A/µs
-
85
127
ns
Reverse recovery charge
Q
rr
-
104
156
nC
2003-02-21
Page 4
Rev. 1.0
BSP324
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
BSP324
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
°C
160
T
A
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
A
0.18
BSP324
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 °C
10
0
10
1
10
2
10
3
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
BSP324
I
D
R
DS
(on
)
=
V
DS
/
I
D
DC
10 ms
1 ms
tp = 170.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP324
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2003-02-21
Page 5
Rev. 1.0
BSP324
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
= 25 °C, V
GS
0
1
2
3
4
5
6
7
8
10
0
0.1
0.2
0.3
0.4
0.6
10V
7V
6V
5V
4.5V
4.3V
4.1V
3.9V
3.7V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
= 25 °C, V
GS
0
0.05
0.1
0.15
0.2
0.25
A
0.35
I
D
0
2
4
6
8
10
12
14
16
18
22
R
DS(on)
3.7V
3.9V
4.1V
4.3V
4.5V
5V
6V
7V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: T
j
= 25 °C
0
1
2
3
V
5
V
GS
0
0.05
0.1
0.15
0.2
0.25
A
0.35
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 °C
0
0.05
0.1
0.15
0.2
0.25
A
0.35
I
D
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
S
0.36
g
fs
2003-02-21
Page 6
Rev. 1.0
BSP324
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.17 A, V
GS
= 10 V
-60
-20
20
60
100
°C
180
T
j
0
10
20
30
40
50
60
70
80
90
100
110
130
BSP324
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS;
I
D
=94µA
-60
-20
20
60
100
°C
160
Tj
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
V
2.6
- V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz, T
j
= 25 °C
0
5
10
15
20
V
30
V
DS
0
10
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-3
10
-2
10
-1
10
0
10
A
BSP324
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
2003-02-21
Page 7
Rev. 1.0
BSP324
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
0
1
2
3
4
5
nC
7
Q
G
0
2
4
6
8
10
12
V
16
BSP324
V
GS
0.2 V
DS max
0.5 V
DS max
0.8 V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60
-20
20
60
100
°C
180
T
j
360
370
380
390
400
410
420
430
440
450
460
470
V
490
BSP324
V
(BR)DSS
2003-02-21
Page 8
Rev. 1.0
BSP324
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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