2002-07-17
Page 1
Preliminary data
BSP 317 P
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
-250
V
R
DS(on)
4
I
D
-0.43
A
Feature
·
P-Channel
·
Enhancement mode
·
Logic Level
·
dv/dt rated
SOT-223
VPS05163
1
2
3
4
Gate
pin1
Drain
pin 2/4
Source
pin 3
Marking
BSP317P
Type
Package
Ordering Code
Tape and Reel Information
BSP 317 P SOT-223
Q67042-S4167
-
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.43
-0.34
A
Pulsed drain current
T
A
=25°C
I
D puls
-1.72
Reverse diode dv/dt
I
S
=-0.43A, V
DS
=-200V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
2002-07-17
Page 2
Preliminary data
BSP 317 P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
R
thJS
-
15
25
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
80
48
115
70
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250µA
V
(BR)DSS
-250
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=-370µA
V
GS(th)
-1
-1.5
-2
Zero gate voltage drain current
V
DS
=-250V, V
GS
=0, T
j
=25°C
V
DS
=-250V, V
GS
=0, T
j
=150°C
I
DSS
-
-
-0.1
-10
-0.2
-100
µA
Gate-source leakage current
V
GS
=-20V, V
DS
=0
I
GSS
-
-10
-100 nA
Drain-source on-state resistance
V
GS
=-4.5V, I
D
=-0.39A
R
DS(on)
-
3.3
5
Drain-source on-state resistance
V
GS
=-10V, I
D
=-0.43A
R
DS(on)
-
3
4
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2002-07-17
Page 3
Preliminary data
BSP 317 P
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
|V
DS
|
2*|I
D
|*R
DS(on)max
,
I
D
=-0.34A
0.38
0.76
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=-25V,
f=1MHz
-
210
262
pF
Output capacitance
C
oss
-
30
37
Reverse transfer capacitance C
rss
-
13.4
16.7
Turn-on delay time
t
d(on)
V
DD
=-30V, V
GS
=-10V,
I
D
=-0.43A, R
G
=6
-
5.7
8.5
ns
Rise time
t
r
-
11.1
16.6
Turn-off delay time
t
d(off)
-
254
381
Fall time
t
f
-
67
100
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-200V, I
D
=-0.43A
-
-0.5
-0.65 nC
Gate to drain charge
Q
gd
-
-4
-5.2
Gate charge total
Q
g
V
DD
=-200V, I
D
=-0.43A,
V
GS
=0 to -10V
-
-11.6
-15.1
Gate plateau voltage
V
(plateau) V
DD
=-200V, I
D
=-0.43A
-
-2.8
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C
-
-
-0.43 A
Inv. diode direct current, pulsed I
SM
-
-
-1.72
Inverse diode forward voltage V
SD
V
GS
=0, I
F
=-0.43A
-
-0.84
-1.2
V
Reverse recovery time
t
rr
V
R
=-125V, I
F=
l
S
,
di
F
/dt=100A/µs
-
92
138
ns
Reverse recovery charge
Q
rr
-
210
315
nC
2002-07-17
Page 4
Preliminary data
BSP 317 P
1 Power dissipation
P
tot
= f (TA)
0
20
40
60
80
100
120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
BSP 317 P
P
tot
2 Drain current
I
D
= f (TA)
parameter: |V
GS
|
10V
0
20
40
60
80
100
120
°C
160
T
A
0
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
-0.35
-0.4
A
-0.5
BSP 317 P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , TA = 25°C
-10
-1
-10
0
-10
1
-10
2
-10
3
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSP 317 P
I
D
R
D
S(
on
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
tp = 140.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP 317 P
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-07-17
Page 5
Preliminary data
BSP 317 P
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: Tj =25°C, -V
GS
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
-V
DS
0
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-
I
D
10V
5V
4.4V
3.6V
3.2V
2.8V
2.4V
2.2V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
; Tj =25°C, -V
GS
0
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-I
D
0
1
2
3
4
5
6
7
8
10
R
DS(on)
2.2V
2.4V
2.8V
3.2V
3.6V
4.4V
5V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS|
2 x |I
D
| x R
DS(on)max
parameter: T
j
= 25 °C
0
0.4
0.8
1.2
1.6
2
2.4
2.8
V
3.6
-V
GS
0
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: Tj =25°C
0
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-I
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
S
1.4
g
fs
2002-07-17
Page 6
Preliminary data
BSP 317 P
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= -0.43 A, V
GS
= -10 V
-60
-20
20
60
100
°C
180
T
j
0
1
2
3
4
5
6
7
8
9
11
BSP 317 P
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS
-60
-20
20
60
100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz, T
j
= 25°C
0
4
8
12
16
20
24
28
V
36
-V
DS
0
10
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
V
-3
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSP 317 P
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
2002-07-17
Page 7
Preliminary data
BSP 317 P
13 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= -0.43 A pulsed, T
j
= 25°C
0
2
4
6
8
10
12
14 nC
18
|Q
G
|
0
-2
-4
-6
-8
-10
-12
V
-16
BSP 317 P
V
GS
20%
50%
80%
14 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60
-20
20
60
100
°C
180
T
j
-225
-230
-235
-240
-245
-250
-255
-260
-265
-270
-275
-280
-285
V
-300
BSP 317 P
V
(BR)DSS
2002-07-17
Page 8
Preliminary data
BSP 317 P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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