2001-09-06
Page 1
Preliminary data
BSO4804
OptiMOS
=
=
=
=
Small-Signal-Transistor
Product Summary
V
DS
30
V
R
DS(on)
20
m
I
D
8
A
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x R
DS(on)
product (FOM)
150°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching applications
Type
Package
Ordering Code
BSO4804
SO 8
Q67042-S4097
Marking
4804
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
8
6.4
A
Pulsed drain current
T
A
=25°C
I
D puls
32
Avalanche energy, single pulse
I
D
=8 A , V
DD
=25V, R
GS
=25
E
AS
90
mJ
Reverse diode dv/dt
I
S
=8A, V
DS
=24V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
2
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
2001-09-06
Page 2
Preliminary data
BSO4804
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
-
-
45
K/W
SMD version, device on PCB:
@ min. footprint; t
10 sec.
@ 6 cm
2
cooling area
1)
; t
10 sec.
R
thJA
-
-
-
-
110
62.5
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
30
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=30µA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=30V, V
GS
=0V, T
j
=25°C
V
DS
=30V, V
GS
=0V, T
j
=125°C
I
DSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=6.7A
R
DS(on)
-
23.8
28.2 m
Drain-source on-state resistance
V
GS
=10V, I
D
=8A
R
DS(on)
-
17.4
20
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2001-09-06
Page 3
Preliminary data
BSO4804
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=6.4A
8.5
17
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f
=1MHz
-
700
870
pF
Output capacitance
C
oss
-
300
370
Reverse transfer capacitance
C
rss
-
74
110
Gate resistance
R
G
-
1.1
-
Turn-on delay time
t
d(on)
V
DD
=15V, V
GS
=4.5V,
I
D
=6.7A, R
G
=9.1
-
9.1
14
ns
Rise time
t
r
-
27
40
Turn-off delay time
t
d(off)
-
18
27
Fall time
t
f
-
24
36
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=15V, I
D
=8A
-
1.9
2.4
nC
Gate to drain charge
Q
gd
-
5.8
8.7
Gate charge total
Q
g
V
DD
=15V, I
D
=8A,
V
GS
=0 to 5V
-
13.5
17
Output charge
Q
oss
V
DS
=15V, I
D
=8A,
V
GS
=0V
-
10.3
13
Gate plateau voltage
V
(plateau) V
DD
=15V, I
D
=8A
-
2.8
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C
-
-
1.8
A
Inverse diode direct current,
pulsed
I
SM
-
-
32
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=1.8A
-
0.9
1.3
V
Reverse recovery time
t
rr
V
R
=15V, I
F =
l
S
,
di
F
/dt
=100A/µs
-
24
30
ns
Reverse recovery charge
Q
rr
-
16
20
nC
2001-09-06
Page 4
Preliminary data
BSO4804
1 Power dissipation
P
tot
= f (
T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
W
2.2
BSO4804
P
tot
2 Drain current
I
D
= f (
T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
°C
160
T
A
0
1
2
3
4
5
6
7
A
9
BSO4804
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
A
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSO4804
I
D
R
DS
(o
n)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
tp = 16.0µs
4 Transient thermal impedance
Z
thJS
= f (t
p
)
parameter : D = t
p
/T
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
2
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSO4804
Z
thJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-09-06
Page 5
Preliminary data
BSO4804
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
2
4
6
8
10
12
14
16
A
19
BSO4804
I
D
VGS [V]
a
a
2.8
b
b
3.0
c
c
3.2
d
d
3.4
e
e
3.6
f
f
3.8
g
g
4.0
h
h
4.5
i
P
tot
= 2W
i
10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0
2
4
6
8
10
A
14
I
D
0
5
10
15
20
25
30
35
40
45
50
55
m
65
BSO4804
R
DS(on)
V
GS
[V] =
c
c
3.2
d
d
3.4
e
e
3.6
f
f
3.8
g
g
4.0
h
h
4.5
i
i
10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
V
4.5
V
GS
0
5
10
15
20
25
30
A
40
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: g
fs
0
5
10
15
20
25
30
A
40
I
D
0
5
10
15
20
25
S
35
g
fs
2001-09-06
Page 6
Preliminary data
BSO4804
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 8 A, V
GS
= 10 V
-60
-20
20
60
100
°C
180
T
j
0
4
8
12
16
20
24
28
32
36
m
42
BSO4804
R
DS(on)
typ
98%
10 Gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS
, I
D
= 30 µA
-60
-20
20
60
100
°C
160
T
j
0
0.5
1
1.5
V
2.5
V
GS(th)
typ.
max.
min.
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj , t
p
= 80 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
2
10
A
BSO4804
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0V, f=1 MHz
0
5
10
15
20
V
30
V
DS
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
2001-09-06
Page 7
Preliminary data
BSO4804
13 Typ. avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 8 A , V
DD
= 25 V, R
GS
= 25
25
50
75
100
°C
150
T
j
0
10
20
30
40
50
60
70
mJ
90
E
AS
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= 8 A pulsed
0
4
8
12 16 20 24 28 32 36 nC 42
Q
Gate
0
2
4
6
8
10
12
V
16
BSO4804
V
GS
0.2 V
DS max
0.5 V
DS max
0.8 V
DS max
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
parameter: I
D
=10 mA
-60
-20
20
60
100
°C
180
T
j
27
28
29
30
31
32
33
34
V
36
BSO4804
V
(BR)DSS
2001-09-06
Page 8
Preliminary data
BSO4804
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.
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