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Part Number BSO215C

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1999-09-22
Page 1
Preliminary data
BSO 215 C
SIPMOS
®
Small-Signal-Transistor
Product Summary
N
P
Drain source voltage
V
DS
20
-20
V
Drain-Source on-state
resistance
R
DS(on)
0.1
0.1
Continuous drain current
I
D
3.7
-3.7
A
Features
·
Dual N- and P -Channel
·
Enhancement mode
·
Logic Level
·
Avalanche rated
·
d
v/dt rated
Type
Package
Ordering Code
BSO 215 C
SO 8
Q67041-S4025
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
N
P
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
3.7
3
-3.7
-3
A
Pulsed drain current
T
A
= 25 °C
I
D puls
14.8
-14.8
Avalanche energy, single pulse
I
D
= 3 A,
V
DD
= 15 V,
R
GS
= 25
I
D
= -3.7 A ,
V
DD
= -15 V,
R
GS
= 25
E
AS
26
-
-
68
mJ
Avalanche energy, periodic limited by
T
jmax
E
AR
0.2
0.2
Reverse diode d
v/dt, T
jmax
= 150 °C
I
S
= 3 A,
V
DS
= 16 V, d
i/dt = 200 A/µs
I
S
= -2.7 A,
V
DS
= -16 V, d
i/dt = -200 A/µs
d
v/dt
6
-
-
6
kV/µs
Gate source voltage
V
GS
±20
±20
V
Power dissipation
T
A
= 25 °C
P
tot
2
2
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
1999-09-22
Page 2
Preliminary data
BSO 215 C
Termal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Thermal resistance, junction - soldering point
N
P
R
thJS
-
-
-
-
40
40
K/W
SMD version, device on PCB:
@ min. footprint; t
10 sec.
@ 6 cm
2
cooling area
1)
; t
10 sec.
@ min. footprint; t
10 sec.
@ 6 cm
2
cooling area
1)
; t
10 sec.
N
N
P
P
R
thJA
-
-
-
-
-
-
-
-
110
62.5
100
62.5
Static Characteristics, at
T
j
= 25 °C, unless otherwise specified
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 250 µA
V
GS
= 0 V,
I
D
= -250 µA
N
P
V
(BR)DSS
20
-20
-
-
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 10 µA
I
D
= -450 µA
N
P
V
GS(th)
1.2
-1
1.5
-1.5
2
-2
Zero gate voltage drain current
V
DS
= 20 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 20 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= -20 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -20 V,
V
GS
= 0 V,
T
j
= 125 °C
N
N
P
P
I
DSS
-
-
-
-
0.1
10
-0.1
-10
1
100
-1
-100
µA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= -20 V,
V
DS
= 0 V
N
P
I
GSS
-
-
10
-10
100
-100
nA
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 3 A
V
GS
= -4.5 V,
I
D
= -3 A
N
P
R
DS(on)
-
-
0.1
0.1
0.15
0.15
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 3.7 A
V
GS
= -10 V ,
I
D
= -3.7 A
N
P
R
DS(on)
-
-
0.05
0.06
0.1
0.1
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
1999-09-22
Page 3
Preliminary data
BSO 215 C
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max
,
I
D
= 3 A
VV
DS
2
*
I
D *
R
DS(on)max
,
I
D
= -3 A
N
P
g
fs
2.1
2.6
4.4
5.2
-
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
N
P
C
iss
-
-
197
380
246
475
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
N
P
C
oss
-
-
109
290
136
360
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f = 1 MHz
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
N
P
C
rss
-
-
59
103
74
128
Turn-on delay time
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 3 A,
R
G
= 33
V
DD
= -10 ,
V
GS
= -4.5 V,
I
D
= -3 A,
R
G
= 13
N
P
t
d(on)
-
-
15
24
22.5
36
ns
Rise time
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 3 A,
R
G
= 33
V
DD
= -10 ,
V
GS
= -4.5 V,
I
D
= -3 A,
R
G
= 13
N
P
t
r
-
-
88
236
132
354
Turn-off delay time
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 3 A,
R
G
= 33
V
DD
= -10 ,
V
GS
= -4.5 V,
I
D
= -3 A,
R
G
= 13
N
P
t
d(off)
-
-
12.3
87
18.5
130
Fall time
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 3 A,
R
G
= 33
V
DD
= -10 V,
V
GS
= -4.5 V,
I
D
= -3 A,
R
G
= 13
N
P
t
f
-
-
17.1
168
25.7
252
1999-09-22
Page 4
Preliminary data
BSO 215 C
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Gate to source charge
V
DD
= 16 ,
I
D
= 3.7 A
V
DD
= -16 ,
I
D
= -3.7 A
N
P
Q
gs
-
-
1.3
1.9
2
2.9
nC
Gate to drain charge
V
DD
= 16 ,
I
D
= 3.7 A
V
DD
= -16 ,
I
D
= -3.7 A
N
P
Q
gd
-
-
3
4.4
4.5
6.6
Gate charge total
V
DD
= 16 ,
I
D
= 3.7 A,
V
GS
= 0 to 10V
V
DD
= -16 ,
I
D
= -3.7 A,
V
GS
= 0 to -10V
N
P
Q
g
-
-
7.7
13.2
11.5
19.8
Gate plateau voltage
V
DD
= 16 ,
I
D
= 3.7 A
V
DD
= -16 ,
I
D
= -3.7 A
N
P
V
(plateau)
-
-
3.5
2.8
-
-
V
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 °C
N
P
I
S
-
-
-
-
3.7
-3.7
A
Inverse diode direct current,pulsed
T
A
= 25 °C
N
P
I
SM
-
-
-
-
14.8
-14.8
Inverse diode forward voltage
V
GS
= 0 V,
I
F
=
I
S
V
GS
= 0 V,
I
F
=
I
S
N
P
V
SD
-
-
0.84
-0.82
1.1
-1
V
Reverse recovery time
V
R
= 10 V,
I
F=
l
S
, d
i
F
/d
t = 100 A/µs
V
R
= -10 V,
I
F=
l
S
, d
i
F
/d
t = -100 A/µs
N
P
t
rr
-
-
46.5
137
70
205
ns
Reverse recovery charge
V
R
= 10 V,
I
F=
l
S
, d
i
F
/d
t = 100 A/µs
V
R
= -10 V,
I
F=
l
S
, d
i
F
/d
t = -100 A/µs
N
P
Q
rr
-
-
18.4
80
27.6
120
µC
1999-09-22
Page 5
Preliminary data
BSO 215 C
Power Dissipation (P-Ch.)
P
tot
=
f (T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
W
2.2
BSO 215 C
P
tot
Power Dissipation (N-Ch.)
P
tot
=
f (T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
W
2.2
BSO 215 C
P
tot
Drain current (N-Ch.)
I
D
=
f (T
A
)
parameter:
V
GS
10 V
0
20
40
60
80
100
120
°C
160
T
A
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
A
4.0
BSO 215 C
I
D
Drain current (P-Ch.)
I
D
=
f (T
A
)
parameter:
V
GS
-10 V
0
20
40
60
80
100
120
°C
160
T
A
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
A
-4.0
BSO 215 C
I
D
1999-09-22
Page 6
Preliminary data
BSO 215 C
Safe operating area (N-Ch.)
I
D
=
f ( V
DS
)
parameter :
D = 0 , T
A
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSO 215 C
I
D
R
D
S
(on)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 57.0µs
Safe operating area (P-Ch.)
I
D
=
f ( V
DS
)
parameter :
D = 0 , T
A
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
2
-10
A
BSO 215 C
I
D
R
D
S(
on)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 86.0µs
Transient thermal impedance (N-Ch.)
Z
thJC
=
f(t
p
)
parameter :
D = t
p
/
T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
3
s
t
p
-1
10
0
10
1
10
2
10
K/W
BSO 215 C
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Transient thermal impedance (P-Ch.)
Z
thJC
=
f(t
p
)
parameter :
D = t
p
/
T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSO 215 C
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
1999-09-22
Page 7
Preliminary data
BSO 215 C
Typ. output characteristics (N-Ch.)
I
D
=
f (V
DS
)
parameter:
t
p
= 80 µs
0.0
0.5 1.0
1.5 2.0
2.5 3.0
3.5 4.0
V
5.0
V
DS
0
1
2
3
4
5
6
7
8
A
10
BSO 215 C
I
D
V
GS [V]
a
a
2.5
b
b
2.7
c
c
3.0
d
d
3.2
e
e
3.5
f
f
3.7
g
g
4.0
h
h
4.2
i
i
4.5
j
P
tot
= 2.00W
j
5.0
Typ. output characteristics (P-Ch.)
I
D
=
f (V
DS
)
parameter:
t
p
= 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
-5.0
V
DS
0
-1
-2
-3
-4
-5
-6
-7
-8
A
-10
BSO 215 C
I
D
V
GS [V]
a
a
-2.5
b
b
-2.7
c
c
-3.0
d
d
-3.2
e
e
-3.5
f
f
-3.7
g
P
tot
= 2.00W
g
-4.0
Typ. drain-source-on-resistance (N-Ch.)
R
DS(on)
=
f (I
D
)
parameter:
V
GS
0.0
1.0
2.0
3.0
4.0
5.0
A
7.0
I
D
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.32
BSO 215 C
R
DS(on)
d
V
GS
[V] =
d
3.2
e
e
3.5
f
f
3.7
g
g
4.0
h
h
4.2
i
i
4.5
j
j
5.0
Typ. drain-source-on-resistance (P-Ch.)
R
DS(on)
=
f (I
D
)
parameter:
V
GS
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
°C
-7.0
T
j
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.32
BSO 215 C
R
DS(on)
b
V
GS
[V] =
b
-2.7
c
c
-3.0
d
d
-3.2
e
e
-3.5
f
f
-3.7
g
g
-4.0
1999-09-22
Page 8
Preliminary data
BSO 215 C
Typ. transfer characteristics (N-Ch.)
parameter:
t
p
= 80 µs
I
D
=
f (V
GS
),
V
DS
2 x
I
D
x
R
DS(on)max
0
1
2
3
4
5
V
GS
7
V
0
1
2
3
4
5
6
7
8
A
10

I
D
Typ. transfer characteristics (P-Ch.)
parameter:
t
p
= 80 µs
I
D
=
f (V
GS
),
V
DS
2 x
I
D
x
R
DS(on)max
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
-5.0
V
GS
0
-1
-2
-3
-4
-5
-6
-7
-8
A
-10
I
D
Typ. forward transconductance (N-Ch.)
g
fs
= f(
I
D
);
T
j
= 25 °C
parameter:
g
fs
0
1
2
3
4
5
6
7
8
A
10
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
S
7.0

g
fs
Typ. forward transconductance (P-Ch.)
g
fs
= f(
I
D
);
T
j
= 25 °C
parameter:
g
fs
0
-1
-2
-3
-4
-5
-6
-7
-8
A
-10
I
D
0
1
2
3
4
5
6
7
8
S
10

g
fs
1999-09-22
Page 9
Preliminary data
BSO 215 C
Drain-source on-resistance (N-Ch.)
R
DS(on)
= f (
T
j
)
parameter :
I
D
= 3.7 A ,
V
GS
= 10 V
-60
-20
20
60
100
°C
180
T
j
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.26
BSO 215 C
R
DS(on)
typ
98%
Drain-source on-resistance (P-Ch.)
R
DS(on)
= f
(T
j
)
parameter :
I
D
= -3.7 A ,
V
GS
= -10 V
-60
-20
20
60
100
°C
180
T
j
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.19
BSO 215 C
R
DS(on)
typ
98%
Gate threshold voltage (N-Ch.)
V
GS(th)
=
f (Tj)
parameter:
V
GS
=
V
DS
,
I
D
= 10 µA
-60
-20
20
60
100
°C
160
T
j
0.0
0.2
0.5
0.8
1.0
1.2
1.5
1.8
2.0
2.2
2.5
V
3.0

V
GS(th)
2%
-60
-20
20
60
100
°C
160
T
j
0.0
0.2
0.5
0.8
1.0
1.2
1.5
1.8
2.0
2.2
2.5
V
3.0

V
GS(th)
typ
-60
-20
20
60
100
°C
160
T
j
0.0
0.2
0.5
0.8
1.0
1.2
1.5
1.8
2.0
2.2
2.5
V
3.0

V
GS(th)
98%
-60
-20
20
60
100
°C
160
T
j
0.0
0.2
0.5
0.8
1.0
1.2
1.5
1.8
2.0
2.2
2.5
V
3.0

V
GS(th)
Gate threshold voltage (P-Ch.)
V
GS(th)
=
f (Tj)
parameter:
V
GS
=
V
DS
,
I
D
= -450 µA
-60
-20
20
60
100
°C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0

V
GS(th)
2%
-60
-20
20
60
100
°C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0

V
GS(th)
typ
-60
-20
20
60
100
°C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0

V
GS(th)
98%
-60
-20
20
60
100
°C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0

V
GS(th)
1999-09-22
Page 10
Preliminary data
BSO 215 C
Typ. capacitances (N-Ch.)
C = f(V
DS
)
parameter:
V
GS
=0 V,
f=1 MHz
0
5
10
15
V
25
V
DS
1
10
2
10
3
10
pF

C
C
iss
C
oss
C
rss
Typ. capacitances (P-Ch.)
C = f(V
DS
)
parameter:
V
GS
=0 V,
f=1 MHz
0
-5
-10
-15
V
-25
V
DS
1
10
2
10
3
10
4
10
pF

C
C
oss
0
-5
-10
-15
V
-25
V
DS
1
10
2
10
3
10
4
10
pF

C
C
iss
C
rss
Forward characteristics of reverse diode
I
F
=
f (V
SD
), (N-Ch.)
parameter:
Tj , t
p
= 80 µs
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
-2
10
-1
10
0
10
1
10
A
BSO 215 C
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
Forward characteristics of reverse diode
I
F
=
f (V
SD
), (P-Ch.)
parameter:
T
j
,
t
p
= 80 µs
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSO 215 C
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
1999-09-22
Page 11
Preliminary data
BSO 215 C
Avalanche Energy
E
AS
=
f (T
j
) (N-Ch.)
parameter:
I
D
= 3 A,
V
DD
= 15 V
R
GS
= 25
25
45
65
85
105
125
°C
165
T
j
0
5
10
15
20
mJ
30

E
AS
Avalanche Energy
E
AS
=
f (T
j
)
parameter:
I
D
= -3.7 A ,
V
DD
= -15 V
R
GS
= 25
25
45
65
85
105
125
°C
165
T
j
0
10
20
30
40
50
mJ
70

E
AS
Typ. gate charge (N-Ch.)
V
GS
= f
(Q
Gate
)
parameter:
I
D
= 3.7 A
0
2
4
6
8
nC
12
Q
Gate
0
2
4
6
8
10
12
V
16
BSO 215 C
V
GS
DS max
V
0,8
DS max
V
0,2
Typ. gate charge (P-Ch.)
V
GS
= f
(Q
Gate
)
parameter:
I
D
= -3.7 A
0
2
4
6
8
10
12
14
16 nC
19
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
BSO 215 C
V
GS
DS max
V
0,8
DS max
V
0,2
1999-09-22
Page 12
Preliminary data
BSO 215 C
Drain-source breakdown voltage
V
(BR)DSS
= f
(T
j
), (N-Ch.)
-60
-20
20
60
100
°C
180
T
j
18.0
18.5
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
V
24.5
BSO 215 C
V
(BR)DSS
Drain-source breakdown voltage
V
(BR)DSS
= f
(T
j
)
-60
-20
20
60
100
°C
180
T
j
-18.0
-18.5
-19.0
-19.5
-20.0
-20.5
-21.0
-21.5
-22.0
-22.5
-23.0
-23.5
V
-24.5
BSO 215 C
V
(BR)DSS
1999-09-22
Page 13
Preliminary data
BSO 215 C
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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