BFP405
SIEGET
25
Aug-20-2001
1
NPN Silicon RF Transistor
For low current applications
For oscillators up to 12 GHz
Noise figure F = 1.25 dB at 1.8 GHz
outstanding G
ms
= 23 dB at 1.8 GHz
Transition frequency f
T
= 25 GHz
Gold metallization for high reliability
SIEGET
25 GHz f
T
- Line
VPS05605
4
2
1
3
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP405
ALs
1=B
2=E
3=C
4=E
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
4.5
V
Collector-base voltage
V
CBO
15
Emitter-base voltage
V
EBO
1.5
Collector current
I
C
12
mA
Base current
I
B
1
Total power dissipation
T
S
120°C
1)
P
tot
55
mW
Junction temperature
T
j
150
°C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
520
K/W
1T
S
is measured on the emitter lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFP405
SIEGET
25
Aug-20-2001
2
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
4.5
5
-
V
Collector-base cutoff current
V
CB
= 5 V, I
E
= 0
I
CBO
-
-
150
nA
Emitter-base cutoff current
V
EB
= 1.5 V, I
C
= 0
I
EBO
-
-
15
µA
DC current gain
I
C
= 5 mA, V
CE
= 4 V
h
FE
50
90
150
-
AC characteristics (verified by random sampling)
Transition frequency
I
C
= 10 mA, V
CE
= 3 V, f = 2 GHz
f
T
18
25
-
GHz
Collector-base capacitance
V
CB
= 2 V, f = 1 MHz
C
cb
-
0.05
0.1
pF
Collector-emitter capacitance
V
CE
= 2 V, f = 1 MHz
C
ce
-
0.24
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
0.29
-
Noise figure
I
C
= 2 mA, V
CE
= 2 V, Z
S
= Z
Sopt
,
f
= 1.8 GHz
F
-
1.25
-
dB
Power gain
1)
I
C
= 5 mA, V
CE
= 2 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 1.8 GHz
G
ms
-
23
-
Insertion power gain
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 MHz,
Z
S
= Z
L
= 50
|S
21
|
2
14
18
-
Third order intercept point
I
C
= 5 mA, V
CE
= 2 V, Z
S
=Z
Sopt
, Z
L
=Z
Lopt
,
f
= 1.8 GHz
IP
3
-
15
-
dBm
1dB Compression point
I
C
= 5 mA, V
CE
= 2 V, f = 1.8 GHz,
Z
S
=Z
Sopt
, Z
L
=Z
Lopt
P
-1dB
-
5
-
1
G
ms
= |S
21
/ S
12
|
BFP405
SIEGET
25
Aug-20-2001
3
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.21024
fA
VAF =
39.251
V
NE =
1.7763
-
VAR =
34.368
V
NC =
1.3152
-
RBM =
1.3491
CJE =
3.7265
fF
TF =
4.5899
ps
ITF =
1.3364
mA
VJC =
0.99532
V
TR =
1.4935
ns
MJS =
0
-
XTI =
3
-
BF =
83.23
-
IKF =
0.16493
A
BR =
10.526
-
IKR =
0.25052
A
RB =
15
RE =
1.9289
VJE =
0.70367
V
XTF =
0.3641
-
PTF =
0
deg
MJC =
0.48652
-
CJS =
0
fF
XTB =
0
-
FC =
0.99469
-
NF =
1.0405
-
ISE =
15.761
fA
NR =
0.96647
-
ISC =
0.037223
fA
IRB =
0.21215
mA
RC =
0.12691
MJE =
0.37747
-
VTF =
0.19762
V
CJC =
96.941
fF
XCJC =
0.08161
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA
RS =
20
N =
1.02
-
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
L
BI
=
0.47
nH
L
BO
=
0.53
nH
L
EI
=
0.23
nH
L
EO
=
0.05
nH
L
CI
=
0.56
nH
L
CO
=
0.58
nH
C
BE
=
136
fF
C
CB
=
6.9
fF
C
CE
=
134
fF
Valid up to 6GHz
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
BFP405
SIEGET
25
Aug-20-2001
4
For non-linear simulation:
Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.
Simulation of package is not necessary for frequencies < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
EHA07307
C
E
E
B
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
Higher gain because of lower emitter inductance.
Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
Common Emitter S- and Noise-parameter
For detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes
CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
BFP405
SIEGET
25
Aug-20-2001
5
Total power dissipation
P
tot
= f (T
S
)
0
20
40
60
80
100
120 °C
150
T
S
0
10
20
30
40
50
60
70
80
mW
100
P
tot
Transition frequency
f
T
= f (I
C
)
f
= 2 GHz
V
CE
= parameter in V
0
2
4
6
8
10
mA
14
I
C
0
2
4
6
8
10
12
14
16
18
20
22
24
GHz
30
f
T
1.5 to 4
1
0.75
0.5
Permissible Pulse Load
P
totmax
/P
totDC
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
thJS
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
BFP405
SIEGET
25
Aug-20-2001
6
Power gain
G
ma
, G
ms
= f (I
C
)
V
CE
= 2V
f
= parameter in GHz
0
2
4
6
8
10
mA
14
I
C
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Power gain
G
ma
, G
ms
, |S
21
|
2
= f (f)
V
CE
= 2 V, I
C
= 5 mA
0.0
1.0
2.0
3.0
4.0
GHz
6.0
f
0
4
8
12
16
20
24
28
32
dB
40
G
G
m
G
m
|S
2
Power gain
G
ma
,G
ms
= f (V
CE
)
I
C
=5mA
f
= parameter in GHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
4.5
V
CE
0
2
4
6
8
10
12
14
16
18
20
22
24
GHz
30
G
0.9
1.8
2.4
3
4
5
6
Collector-base capacitance
C
cb
= f (V
CB
)
f
= 1MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
4.0
V
CB
0.00
0.05
0.10
0.15
0.20
pF
0.30
C
cb
BFP405
SIEGET
25
Aug-20-2001
7
Noise figure
F = f (I
C
)
V
CE
= 2 V, f = 1.8 GHz
0
2
4
6
8
mA
12
I
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
dB
4.0
F
ZS = 50 Ohm
ZS = ZSopt
Noise figure
F = f (I
C
)
V
CE
= 2 V, Z
S
= Z
Sopt
0
2
4
6
8
mA
12
I
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
dB
4.0
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
Noise figure
F = f ( f )
V
CE
= 2 V, Z
S
= Z
Sopt
0.0
1.0
2.0
3.0
4.0
GHz
6.0
f
0.0
0.5
1.0
1.5
2.0
dB
3.0
F
IC = 5 mA
IC = 2 mA
Source impedance
for min.
Noise Figure versus Frequency
V
CE
= 2V, I
C
= 2mA / 5 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
0.9GHz
1.8GHz
3GHz
4GHz
5GHz
6GHz
2mA
5mA
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