BCR141S
Jul-12-2001
1
NPN Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R
1
=22k
, R
2
=22k
)
VPS05604
6
3
1
5
4
2
EHA07174
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R
2
R
1
R
2
TR1
TR2
Type
Marking
Pin Configuration
Package
BCR141S
WDs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
50
V
V
CEO
50
Collector-base voltage
V
CBO
10
V
EBO
Emitter-base voltage
Input on Voltage
V
i(on)
30
100
mA
DC collector current
I
C
mW
P
tot
250
Total power dissipation
, T
S
= 115 °C
Junction temperature
150
°C
T
j
-65 ... 150
Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
140
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCR141S
Jul-12-2001
2
Electrical Characteristics at T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
-
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
= 100 µA, I
B
= 0
-
50
V
-
Collector-base breakdown voltage
I
C
= 10 µA, I
B
= 0
-
V
(BR)CBO
50
V
(BR)EBO
-
-
-
Emitter-base breakdown voltage
I
E
= 10 µA, I
C
= 0
-
100
I
CBO
Collector cutoff current
V
CB
= 40 V, I
E
= 0
nA
-
µA
350
I
EBO
-
Emitter cutoff current
V
EB
= 10 V, I
C
= 0
-
-
-
50
-
h
FE
DC current gain 1)
I
C
= 5 mA, V
CE
= 5 V
V
Collector-emitter saturation voltage1)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
0.3
-
-
Input off voltage
I
C
= 100 µA, V
CE
= 5 V
V
i(off)
0.8
V
1.5
-
2.5
V
i(on)
Input on Voltage
I
C
= 2 mA, V
CE
= 0.3 V
1
V
-
k
15
22
R
1
Input resistor
29
-
1.1
1
Resistor ratio
R
1
/R
2
0.9
AC Characteristics
-
130
-
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
MHz
-
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
3
-
pF
C
cb
1) Pulse test: t < 300
s; D < 2%
BCR141S
Jul-12-2001
3
Collector-Emitter Saturation Voltage
V
CEsat
= f (I
C
), h
FE
= 20
0.0
0.2
0.4
0.6
V
1.0
V
CEsat
0
10
1
10
2
10
mA
I
C
DC Current Gain h
FE
= f (I
C
)
V
CE
= 5V (common emitter configuration)
10
-1
10
0
10
1
10
2
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Input on Voltage V
i(on)
= f (I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
10
2
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage V
i(off)
= f (I
C
)
V
CE
= 5V (common emitter configuration)
0.0
0.5
1.0
1.5
2.0
V
3.0
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
BCR141S
Jul-12-2001
4
Total power dissipation P
tot
= f (T
S
)
0
20
40
60
80
100
120 °C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load
P
totmax
/ P
totDC
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load R
thJS
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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