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Part Number BC8xxBF

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Jun-16-2004
1
BC857BF...BC860BF
1
2
3
PNP Silicon AF Transistor
·
For AF input stages and driver applications
·
High current gain
·
Low collector-emitter saturation voltage
·
Low noise between 30 Hz and 15 kHz
·
Complementary types: BC847BF, BC848BF
BC849BF, BC850BF (NPN)
Type
Marking
Pin Configuration
Package
BC857BF
BC858BF
BC859BF
BC860BF
3Fs
3Ks
4Bs
4Fs
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
TSFP-3
TSFP-3
TSFP-3
TSFP-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
BC857BF, BC860BF
BC858BF, BC859BF
V
CEO
45
30
V
Collector-emitter voltage
BC857BF, BC860BF
BC858BF, BC859BF
V
CES
50
30
Collector-base voltage
BC857BF, BC860BF
BC858BF, BC859BF
V
CBO
50
30
Emitter-base voltage
BC857BF, BC860BF
BC858BF, BC859BF
V
EBO
5
5
Collector current
I
C
100
mA
Peak collector current
I
CM
200
Peak base current
I
BM
200
Peak emitter current
I
EM
200
mA
Total power dissipation, T
S
128°C
P
tot
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Jun-16-2004
2
BC857BF...BC860BF
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
R
thJS
90
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 mA, BC857BF, BC860BF
I
C
= 10 mA, I
B
= 0 mA, BC858BF, BC859BF
V
(BR)CEO
45
30
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 µA, I
E
= 0 mA, BC857BF, BC860BF
I
C
= 10 µA, I
E
= 0 mA, BC858BF, BC859BF
V
(BR)CBO
50
30
-
-
-
-
Collector-emitter breakdown voltage
I
C
= 10 µA, V
BE
= 0 V, BC857BF, BC860BF
I
C
= 10 µA, V
BE
= 0 V, BC858BF, BC859BF
V
(BR)CES
50
30
-
-
-
-
Emitter-base breakdown voltage
I
E
= 1 µA, I
C
= 0 µA
V
(BR)EBO
5
-
-
Collector-base cutoff current
V
CB
= 30 V, I
E
= 0 A
V
CB
= 30 V, I
E
= 0 A, T
A
= 150 °C
I
CBO
-
-
-
-
0.015
5
µA
DC current gain
2)
I
C
= 10 µA, V
CE
= 5 V
I
C
= 2 mA, V
CE
= 5 V
h
FE
-
220
250
290
-
475
-
Collector-emitter saturation voltage
2)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
-
-
75
250
300
650
mV
Base emitter saturation voltage
2)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
-
-
700
850
-
-
Base-emitter voltage
2)
I
C
= 2 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
V
BE(ON)
600
-
650
-
750
820
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2
Pulse test: t < 300µs; D < 2%
Jun-16-2004
3
BC857BF...BC860BF
AC Characteristics
Transition frequency
I
C
= 20 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
250
-
MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
3
-
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
10
-
Short-circuit input impedance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
11e
-
4.5
-
k
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
12e
-
2
-
10
-4
Short-circuit forward current transf. ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
21e
-
330
-
-
Open-circuit output admittance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
22e
-
30
-
µ
S
Noise figure
I
C
= 200 µA, V
CE
= 5 V, f = 1 kHz,
f = 200
Hz
, R
S
= 2
k
, BC859BF
I
C
= 200 µA, V
CE
= 5 V, f = 1 kHz,
f = 200
Hz
, R
S
= 2
k
, BC860BF
F

-
-

1
1

4
4
dB
Equivalent noise voltage
I
C
= 200 µA, V
CE
= 5 V, R
S
= 2
k
,
f = 10...50 Hz , BF860BF
V
n
-
-
0.11
µV
Jun-16-2004
4
BC857BF...BC860BF
DC current gain h
FE
=
(I
C
)
V
CE
= 5 V
10
10
10
10
EHP00382
h
mA
-2
-1
1
2
FE
3
10
10
2
0
10
5
5
10
1
0
10
5
5
5
5
100
25
-50
C
C
C
C
Collector-emitter saturation voltage
I
C
=
(V
CEsat
), h
FE
= 20
10
0
EHP00380
V
CEsat
10
mA
10
10
2
1
0
-1
5
5
V
0.3
0.5
100
25
-50
0.1
0.2
0.4
C
C
C
C
Base-emitter saturation voltage
I
C
=
(V
BEsat
), h
FE
= 20
0
10
EHP00379
BEsat
V
0.6
V
1.2
-1
10
0
10
1
2
10
5
5
C
mA
0.2
0.4
0.8
C
25
C
100 C
-50C
Collector cutoff current I
CBO
=
(T
A
)
V
CB
= 30 V
10
0
50
100
150
EHP00381
T
A
5
10
10
nA
10
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Jun-16-2004
5
BC857BF...BC860BF
Transition frequency f
T
=
(I
C
)
V
CE
= 5 V
10
10
10
10
EHP00378
f
mA
MHz
-1
0
1
2
5
T
3
10
10
2
1
10
5
5
5
C
Collector-base capacitance C
CB
=
(V
CB0
)
Emitter-base capacitance C
EB
=
(V
EB0
)
0
4
10
5
10
10
EHP00376
V
CB0
C
EB0
V
6
2
EB0
V
EBO
C
8
10
pF
12
CB0
C
-1
0
1
C
CBO
(
(
)
BC 856...860
)
Total power dissipation P
tot
=
(T
S
)
0
20
40
60
80
100
120 °C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load R
thJS
=
(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Jun-16-2004
6
BC857BF...BC860BF
Permissible Pulse Load
P
totmax
/P
totDC
=
(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
P
totmax
/
P
totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
h parameter h
e
=
(I
C
) normalized
V
CE
= 5V
10
10
10
BC 856...860
EHP00383
mA
-1
0
1
5
e
h
2
10
-1
10
1
10
10
0
5
5
5
h
11e
h
12e
h
21e
h
22e
V
CE
= 5 V
C
h parameter h
e
=
(V
CE
) normalized
I
C
= 2mA
0
0
10
20
30
BC 856...860
EHP00384
V
CE
h
e
V
1.0
0.5
1.5
2.0
= 2 mA
h
11
12
h
h
22
C
Noise figure F =
(V
CE
)
I
C
= 0.2mA, R
S
= 2k
, f = 1kHz
0
10
10
10
10
BC 856...860
EHP00385
V
CE
F
V
10
5
15
dB
20
-1
0
1
2
5
5
Jun-16-2004
7
BC857BF...BC860BF
Noise figure F =
(f)
I
C
= 0.2mA, V
CE
= 5V, R
S
= 2 k
10
10
10
10
BC 856...860
EHP00386
F
kHz
dB
-2
-1
1
2
20
10
0
5
15
f
0
10
Noise figure F =
(I
C
)
V
CE
= 5V, f = 120Hz
10
10
10
10
BC 856...860
EHP00387
F
mA
-3
-2
0
1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
S
R
C
Noise figure F =
(I
C
)
V
CE
= 5V, f = 1kHz
10
10
10
10
BC 856...860
EHP00388
F
mA
-3
-2
0
1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
S
R
C
Noise figure F =
(I
C
)
V
CE
= 5V, f = 10kHz
10
10
10
10
BC 856...860
EHP00389
mA
-3
-2
0
1
20
10
0
5
15
-1
10
dB
F
C
= 1 M
R
S
100 k
10 k
500
1 k
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
©
Infineon Technologies AG 2004.
All Rights Reserved.
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