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Part Number BC850T

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BC846T...BC850T
1
Aug-01-2002
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC856T, BC857T,
BC858T, BC859T, BC860T
VPS05996
1
2
3
Type
Marking
Pin Configuration
Package
BC846AT
BC846BT
BC847AT
BC847BT
BC847CT
BC848AT
BC848BT
BC848CT
BC849BT
BC849CT
BC850BT
BC850CT
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2cs
2Fs
2Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
BC846T...BC850T
2
Aug-01-2002
Maximum Ratings
Parameter
Symbol
BC846T BC847T
BC850T
BC848T
BC849T
Unit
Collector-emitter voltage
V
CEO
65
45
30
V
Collector-base voltage
V
CBO
80
50
30
Collector-emitter voltage
V
CES
80
50
30
Emitter-base voltage
V
EBO
6
6
5
DC collector current
I
C
100
mA
Peak collector current
I
CM
200
mA
Peak base current
I
BM
200
Peak emitter current
I
EM
200
Total power dissipation
,
T
S
= 109 °C
P
tot
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
165
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 BC846T
I
C
= 10 mA, I
B
= 0 BC847T/BC850T
I
C
= 10 mA, I
B
= 0 BC848T/BC849T
V
(BR)CEO
65
45
30

-
-
-

-
-
-
V
Collector-base breakdown voltage
I
C
= 10 µA, I
E
= 0 BC846T
I
C
= 10 µA, I
E
= 0 BC847T/850T
I
C
= 10 µA, I
E
= 0 BC848T/849T
V
(BR)CBO
80
50
30

-
-
-

-
-
-
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
BC846T...BC850T
3
Aug-01-2002
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 µA, V
BE
= 0 BC846T
I
C
= 10 µA, V
BE
= 0 BC847T/850T
I
C
= 10 µA, V
BE
= 0 BC848T/849T
V
(BR)CES
65
50
30

-
-
-

-
-
-
V
Emitter-base breakdown voltage
I
E
= 1 µA, I
C
= 0 BC846T
I
E
= 1 µA, I
C
= 0 BC847T/BC850T
I
E
= 1 µA, I
C
= 0 BC848T/BC849T
V
(BR)EBO
6
6
5

-
-
-

-
-
-
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
I
CBO
-
-
15
nA
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
I
CBO
-
-
5
µA
DC current gain 1)
I
C
= 10 µA, V
CE
= 5 V h
FE
-group A
I
C
= 10 µA, V
CE
= 5 V h
FE
-group B
I
C
= 10 µA, V
CE
= 5 V h
FE
-group C
h
FE

-
-
-
140
250
480

-
-
-
-
DC current gain 1)
I
C
= 2 mA, V
CE
= 5 V h
FE
-group A
I
C
= 2 mA, V
CE
= 5 V h
FE
-group B
I
C
= 2 mA, V
CE
= 5 V h
FE
-group C
h
FE
110
200
420
180
290
520
220
450
800
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
CEsat

-
-
90
200
250
600
mV
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
V
BEsat

-
-
700
900

-
-
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(ON)
580
-
660
-
700
770
1) Pulse test: t
=
300
µ
s, D = 2%
BC846T...BC850T
4
Aug-01-2002
Electrical Characteristicsat T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
-
250
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
3
-
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
8
-
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group A
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group B
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group C
h
11e

-
-
-
2.7
4.7
8.7

-
-
-
k
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group A
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group B
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group C
h
12e

-
-
-
1.5
2
3

-
-
-
10
-4
Short-circuit forward current transf.ratio
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group A
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group B
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group C
h
21e

-
-
-
200
330
600

-
-
-
-
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group A
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group B
I
C
= 2 mA,
V
CE
= 5 V, f = 1 kHz hFE-group C
h
22e

-
-
-
18
30
60

-
-
-
S
BC846T...BC850T
5
Aug-01-2002
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 1 kHz,
f
= 200 Hz BC849T
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 1 kHz,
f
= 200 Hz BC850T
F


-
-

1.2
1

4
4
dB
Equivalent noise voltage
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2
k
,
f = 10 ... 50 Hz BC850T
V
n
-
-
0.135 µV
BC846T...BC850T
6
Aug-01-2002
Collector-base capacitance C
CB
= f (V
CBO
Emitter-base capacitance
C
EB
= f (V
EBO
)
0
4
10
5
10
10
EHP00361
V
CB0
C
EB0
V
6
2
EB0
V
EB
C
8
10
pF
12
CB0
C
-1
0
1
C
CB
(
(
)
BC 846...850
)
Total power dissipation P
tot
= f (T
S
)
0
20
40
60
80
100
120 °C
150
T
S
0
50
100
150
200
mW
300
P
tot
Transition frequency
f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00363
f
mA
MHz
-1
0
1
2
5
T
3
10
10
2
1
10
5
5
5
C
Permissible Pulse Load
P
totmax
/ P
totDC
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
P
totmax
/ P
totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BC846T...BC850T
7
Aug-01-2002
Collector cutoff current
I
CBO
= f (T
A
)
V
CB
= 30V
10
0
50
100
150
EHP00381
T
A
5
10
10
nA
10
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 20
10
0
EHP00367
V
CEsat
10
mA
10
C
10
2
1
0
-1
5
5
V
0.3
0.5
100
25
-50
0.1
0.2
0.4
C
C
C
DC current gain
h
FE
= f (I
C
)
V
CE
= 5V
10
10
10
10
EHP00365
h
mA
-2
-1
1
2
FE
3
10
10
2
0
10
5
5
10
1
0
10
5
5
5
5
100
25
-50
C
C
C
C
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 20
0
10
EHP00364
BEsat
V
0.6
V
1.2
-1
10
0
10
1
2
10
5
5
C
mA
0.2
0.4
0.8
C
25
C
100 C
-50 C
BC846T...BC850T
8
Aug-01-2002
h parameter
h
e
= f (V
CE
) normalized
I
C
= 2mA
0
0
10
20
30
EHP00369
V
CE
h
e
V
1.0
0.5
1.5
2.0
= 2 mA
h
h
h
h
e
e
e
e
21
11
12
22
C
h parameter
h
e
= f (I
C
) normalized
V
CE
= 5V
10
10
10
EHP00368
mA
-1
0
1
5
e
h
2
10
-1
10
1
10
10
0
5
5
5
h
11e
h
12e
h
21e
h
22e
V
CE
= 5 V
C
Noise figure
F = f (f)
I
C
= 0.2mA, V
CE
= 5V, R
S
= 2k
10
10
10
10
BC 846...850
EHP00371
F
kHz
dB
-2
-1
1
2
20
10
0
5
15
f
0
10
Noise figure
F = f (V
CE
)
I
C
= 0.2mA, R
S
= 2k
, f = 1kHz
0
10
10
10
10
BC 846...850
EHP00370
V
CE
F
V
10
5
15
dB
20
-1
0
1
2
5
BC846T...BC850T
9
Aug-01-2002
Noise figure
F = f (I
C
)
V
CE
= 5V, f = 1kHz
10
10
10
10
BC 846...850
EHP00373
F
mA
-3
-2
0
1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
S
R
C
Noise figure
F = f (I
C
)
V
CE
= 5V, f = 120Hz
10
10
10
10
BC 846...850
EHP00372
F
mA
-3
-2
0
1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
S
R
C
Noise figure
F = f (I
C
)
V
CE
= 5V, f = 10kHz
10
10
10
10
BC 846...850
EHP00374
F
mA
-3
-2
0
1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
S
R
C