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Integrated Circuit Solution, Inc.

SR027-0C

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

FEATURES

High-speed access times:

8, 10, 12 and 15 ns

High-preformance, lower-power CMOS process
Multiple center power and ground pins for

greater noise immunity

Easy memory expansion with CE and OE

options

CE power-down
Fully static operation: no clock or refresh

reguired

TTL compatible inputs and outputs
Single 3.3V + 10% power supply
Packages available:

36-pin 400mil SOJ
44-pin TSOP-2

DESCRIPTION

The

1+51

IS61LV5128 is a very high-speed, low power,

524,288-word by 8-bit COMS static RAM. The IS61LV5128 is

fabricated using

1+51

's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit

design techniques, yields higher preformance and low power

consumotion devices.

When CE is HIGH (deselected), the device assumes a standby

mode at which the power dissipation can be reduced down to

250 µW (typical) with CMOS input levels.

The IS61LV5128 operates from a single 3.3V power supply

and all inputs are TTL-compatible.

The IS61LV5128 is available in 36-pin, 400mil SOJ and 44-pin

TSOP-2 package.

IS61LV5128

512K x 8 HIGH-SPEED CMOS STATIC RAM

FUNCTIONAL BLOCK DIAGRAM

A0-A18

512K X 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

IS61LV5128

Integrated Circuit Solution, Inc.

SR027-0C

PIN CONFIGURATION

36-Pin SOJ

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

NC
NC

A0
A1
A2
A3
A4

I/O0
I/O1

Vcc

GND

I/O2
I/O3

A5
A6
A7
A8
A9

NC
NC

NC
NC
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A14
A13
A12
A11
A10
NC
NC
NC

I/O0

I/O1

Vcc

GND

I/O2

I/O3

A18

A17

A16

A15

I/O7

I/O6

GND

Vcc

I/O5

I/O4

A14

A13

A12

A11

A10

PIN CONFIGURATION

44-Pin TSOP-2

PIN DESCRIPTIONS

A0-A18

Address Inputs

Chip Enable Input

Output Enable Input

Write Enable Input

I/O0-I/O7

Input/Output

Vcc

Power

GND

Ground

No Connection

TRUTH TABLE

Mode

I/O Operation

Vcc Current

Not Selected

High-Z

, I

(Power-down)
Output Disabled

High-Z

Read

OUT

Write

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

TERM

Terminal Voltage with Respect to GND

0.5 to Vcc + 0.5 V

BIAS

Temperature Under Bias

55 to +125

°C

STG

Storage Temperature

65 to +150

°C

Power Dissipation

1.0

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these or any

other conditions above those indicated in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

IS61LV5128

Integrated Circuit Solution, Inc.

SR027-0C

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

= Min., I

= 4.0 mA

2.4

Output LOW Voltage

= Min., I

= 8.0 mA

0.4

Input HIGH Voltage

2.0

+ 0.3

Input LOW Voltage

0.3

0.8

Input Leakage

GND V

Com.

µA

Ind.

Output Leakage

GND V

OUT

, Outputs Disabled

Com.

µA

Ind.

Notes:

1. V

= 3.0V for pulse width less than 10 ns.

2. The Vcc operating range for 8 ns is 3.3V +10%, -5%.

CAPACITANCE

(1,2)

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

= 0V

OUT

Output Capacitance

OUT

= 0V

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

= 25°C, f = 1 MHz, Vcc = 3.3V.

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to +70°C

3.3V + 10%

Industrial

40°C to +85°C

3.3V + 10%

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-8 ns

-10 ns

-12 ns

-15 ns

Symbol Parameter

Test Conditions

Min. Max.

Min. Max. Unit

Vcc Dynamic Operating

= Max.,

Com.

300

280

260

240

Supply Current

OUT

= 0 mA, f = f

MAX

Ind.

310

290

270

250

TTL Standby Current

= Max.,

Com.

(TTL Inputs)

= V

or V

Ind.

CE V

, f = 0

CMOS Standby

= Max.,

Com.

Current (CMOS Inputs)

CE V

0.2V,

Ind.

0.2V, or

0.2V, f = 0

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

IS61LV5128

Integrated Circuit Solution, Inc.

SR027-0C

AC TEST CONDITIONS

Parameter

Unit

Input Pulse Level

0V to 3.0V

Input Rise and Fall Times

3 ns

Input and Output Timing

1.5V

and Reference Levels
Output Load

See Figures 1 and 2

Notes:

1. The Vcc operating range for 8 ns is 3.3V +10%, -5%.

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

-8

-10

-12

-15

Symbol Parameter

Min. Max.

Unit

Read Cycle Time

Address Access Time

OHA

Output Hold Time

ACE

CE Access Time

DOE

OE Access Time

HZOE

OE to High-Z Output

LZOE

OE to Low-Z Output

HZCE

CE to High-Z Output

LZCE

CE to Low-Z Output

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of

0 to 3.0V and output loading specified in Figure 1a.

2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3. Not 100% tested.

AC TEST LOADS

Figure 1.

Figure 2.

319

30 pF

Including

jig and

scope

353

OUTPUT

3.3V

319

5 pF

Including

jig and

scope

353

OUTPUT

3.3V

IS61LV5128

Integrated Circuit Solution, Inc.

SR027-0C

DATA VALID

PREVIOUS DATA VALID

OHA

OUT

ADDRESS

OHA

DOE

LZOE

ACE

LZCE

HZOE

HIGH-Z

DATA VALID

ADDRESS

OUT

HZCE

READ CYCLE NO. 2

(1,3)

Notes:

1. WE is HIGH for a Read Cycle.

2. The device is continuously selected. OE, CE = V

3. Address is valid prior to or coincident with CE LOW transitions.

AC WAVEFORMS

READ CYCLE NO. 1

(1,2)

Part Number IS61LV5128