Hitachi IGBT Module / Silicon N-Channel IGBT
MBN400GR12
[Rated 400A/1200V, Single-pack type]
FEATURES OUTLINE DRAWING
·
Low saturation voltage and high speed.
·
Low turn-OFF switching loss.
·
Low noise due to build-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
·
High reliability structure.
·
Isolated heat sink (terminals to base).
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS(T
C
=25°C)
Item
Symbol
Unit
Value
Collector-Emitter Voltage
V
CES
V
1200
Gate-Emitter Voltage
V
GES
V
±
20
DC
I
C
400
Collector Current
1ms
I
CP
A
800
DC
I
F
400
*1
Forward Current
1ms
I
FM
A
800
Collector Power Dissipation
P
C
W
2080
Junction Temperature
T
j
°
C
-40 ~ +150
Storage Temperature
T
stg
°
C
-40 ~ +125
Isolation Voltage
V
iso
V
RMS
2500(AC 1 minute)
Terminals (M4/M6)
1.37(14) / 2.94(30)
*2
Screw Torque
Mounting
-
N·m
(kgf·cm)
2.94(30)
*3
Notes;
*1: RMS current of Diode
£
120 Arms
*2: Recommended value 1.18 / 2.45 N·m (12 / 25 kgf·cm)
*3: Recommended value 2.45 N·m (25 kgf·cm)
CHARACTERISTICS (T
C
=25°C)
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Collector-Emitter Cut-Off Current
I
CES
mA
-
-
1.0
V
CE
=1200V, V
GE
=0V
Gate-Emitter Leakage Current
I
GES
nA
-
-
±
500
V
GE
=
±
20V, V
CE
=0V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
-
2.2
2.8
I
C
=400A, V
GE
=15V
Gate-Emitter Threshold Voltage
V
GE(TO)
V
-
-
10
V
CE
=5V, I
C
=400mA
Input Capacitance
C
ies
pF
-
37000
-
V
CE
=10V, V
GE
=0V, f=1MHz
Rise Time
t
r
-
0.25
0.7
Turn-ON Time
t
on
-
0.4
0.9
Fall Time
t
f
-
0.2
0.35
Switching Times
Turn-Off Time
t
off
m
s
-
0.7
1.1
V
CC
=600V
R
L
=1.5
W
R
G
=2.7
W
*4
V
GE
=
±
15V
Peak Forward Voltage Drop
V
FM
V
-
2.5
3.5
I
F
=400A, V
GE
=0V
Reverse Recovery Time
t
rr
m
s
-
-
0.4
I
F
=400A, V
GE
=-10V, di/dt=400A/
m
s
IGBT
R
th(j-c)
0.06
Thermal Impedance
FWD
R
th(j-c)
°
C/W
-
-
0.10
Junction to case
Notes; *4:R
G
value is the test condition's value for decision of the switching times, not recommended value, please determine
the suitable R
G
value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
108
20
29
33.5
23.5
93
4-
6.5
48
62
2-M4
2-M6
20
24
6.5
C
G
E
E
Unit in mm
Spec. No. IGBT-SP-99026(R1)
Weight : 480g
C
E
E
G
PDE-N400GR12-0
VGE
=
15V14V13V
800
0
2
4
6
8
10
600
400
200
11V
12V
TYPICAL
10V
9V
Tc
=
25
°
C
Collector Current, Ic (A)
Collector to Emitter Voltage, V
CE
(V)
Collector current vs. Collector to Emitter voltage
Pc
=
2080W
VGE
=
15V14V13V
800
0
2
4
6
8
10
600
400
200
11V
12V
TYPICAL
10V
9V
Tc
=
125
°
C
Collector Current, Ic (A)
Collector to Emitter Voltage, V
CE
(V)
Collector current vs. Collector to Emitter voltage
Ic
=
400A
Ic
=
800A
10
8
6
4
2
0
0
5
10
15
20
TYPICAL
Collector to Emitter V
oltage, V
CE
(V)
Gate to Emitter Voltage, V
GE
(V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=
25
°
C
Ic
=
400A
Ic
=
800A
10
8
6
4
2
0
0
5
10
15
20
TYPICAL
Collector to Emitter V
oltage, V
CE
(V)
Gate to Emitter Voltage, V
GE
(V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Tc
=
125
°
C
20
15
10
5
0
0
500
1000
1500
2000
3000
2500
TYPICAL
Vcc
=
600V
Ic
=
400A
Tc
=
25
°
C
Gate to Emitter V
oltage, V
GE
(V)
Gate Charge, Q
G
(nC)
Gate charge characteristics
800
600
400
200
0
0
1
2
3
4
5
TYPICAL
F
orward Current, I
F
(A)
Forward Voltage, V
F
(V)
Forward voltage of free-wheeling diode
V
GE
=
0
Tc
=
25
°
C
Tc
=
125
°
C
PDE-N400GR12-0
1.5
1
0.5
0
0
100
200
300
400
500
TYPICAL
Switching Time, t (
µ
s)
Collector Current, I
C
(A)
Switching time vs. Collector current
ton
toff
Vcc
=
600V
V
GE
=±
15V
R
G
=
2.7
T
C
=
25
°
C
Resistive Load
tr
tf
TYPICAL
10
1
0.1
1
10
100
Switching Time, t (
µ
s)
Gate Resistance, R
G
(
)
Switching time vs. Gate resistance
ton
toff
V
CC
=
600V
V
GE
=±
15V
I
C
=
400A
T
C
=
25
°
C
Resistive Load
tf
tr
TYPICAL
100
90
80
70
60
50
40
30
20
10
0
0
100
200
300
400
500
Switching Loss, Et
on
,Et
off
, E
rr
(mJ/pulse)
Collector Current. I
C
(A)
Switching loss vs. Collector current
Err
V
CC
=
600V
V
GE
=±
15V
R
G
=
2.7
T
C
=
125
°
C
Inductive Load
Eton
Etoff
TYPICAL
1000
100
10
1
1
10
100
Switching Loss, Et
on
, Et
off
, E
rr
(mJ/pulse)
Gate Resistance. R
G
(
)
Switching loss vs. Gate resistance
V
CC
=
600V
V
GE
=±
15V
I
C
=
400A
T
C
=
125
°
C
Inductive Load
Etoff
Eton
Err
10000
1000
100
10
1
0
200
400
600
800
1000
1200
1400
Collector Current, Ic (A)
Collector to Emitter Voltage, V
CE
(V)
Reverse biased safe operating area
V
GE
=±
15V
R
G
=
2.7
T
C
125
°
C
1
0.1
0.01
0.001
0.001
0.01
0.1
1
10
T
ransient Thermal Impedance, R
th(j-c)
(
°
C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
1.
The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.
Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.
In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users' fail-safe
precautions or other arrangement. Or consult Hitachi's sales department staff.
4.
In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user's units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.
In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.
No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.
This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.
The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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For inquiries relating to the products, please contact nearest overseas representatives which is located
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Notices
Notices
Notices
Notices
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