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Part Number HRF302A

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HRF302A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-244C(Z)
Rev 3
Features
·
Low forward voltage drop and suitable for high effifiency rectifying.
·
DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRF302A
302A
DO-214
Outline
1
2
1. Cathode
2. Anode
Cathode mark
Mark
302A
Lot No.
HRF302A
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
*1
20
V
Average rectified current
I
o
*1
3
A
Non-Repetitive peak
forward surge current
I
FSM
*2
100
A
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
­40 to +125
°
C
Notes: 1. See from Fig.4 to Fig.7
2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
--
--
0.40
V
I
F
= 3A
Reverse current
I
R
--
--
1.0
mA
V
R
= 20V
ESD-Capability
--
250
--
--
V
C = 200pF , R = 0
, Both forward and reverse
direction 1 pulse.
Thermal resistance
Rth(j-a)
--
100
--
°
C/W
Glass epoxy board
*1
Rth(j-c)
--
34
--
Tc = 25
°
C
Note:
1. Glass epoxy board
6.8
Unit: mm
2.0
3.5
Land size
HRF302A
3
Main Characteristic
10
10
-1
10
-3
10
-2
10
2
1.0
0
0.2
0.4
0.6
0.1
0.5
0.3
Ta=75°C
Ta=25°C
0
5
10
10
-3
10
-2
-4
25
20
10
-5
10
-6
15
10
Ta=75°C
Ta=25°C
10
10
1.0
40
10
3
10
2
Forward voltage V (V)
F
Forward current I (A)
Pulse test
Reverse voltage V (V)
Reverse current I (A)
Pulse test
Reverse voltage V (V)
R
Capacitance C (pF)
f=1MHz
Pulse test
Fig.3 Capacitance
Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
R
R
F
HRF302A
4
Main Characteristic
75
100
25
50
0
125
3.5
3.0
2.5
2.0
0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
0
1.0
1.5
1.0
0.5
20
15
10
5
0
0
DC
Sin
D=1/2
D=1/3
D=1/6
t
T
0A
D=
T
t
Sin
t
T
0V
D=
T
t
D=1/6
DC
0.5
0
Tj =25°C
Tj =125°C
2.0
D=1/2
D=2/3
D=5/6
1.5
1.0
D=1/2
Sin
0
75
100
25
50
0
125
-25
VR=VRRM/2
Tj =125°C
D=1/3
0.5
DC
3.0
2.5
2.0
1.5
1.0
0.5
3.5
D=1/6
D=1/3
D=1/2
Sin
VR=VRRM/2
Tj =125°C
Glass epoxy PCB
Case temperature
Tc (°C)
Average forward current I
O
(A)
Fig.6 Average forward current Vs. Case temperature
Ambient temperature
Ta (°C)
Average forward current I
O
(A)
Fig.7 Average forward current Vs. Ambient temperature
Forward current I F (A)
Fig.5 Reverse power dissipation Vs. Reverse voltage
Fig.4 Forward p ower dissipation Vs. Forward current
Reverse voltage V
R
(V)
Reverse power dissipation P
d
(W)
Forward power dissipation P
d
(W)
HRF302A
5
Package Dimensions
Unit : mm
0.25
8.0 ± 0.3
3.0 ± 0.2
4.0 ± 0.2
1.2 ± 0.3
7.0 ± 0.2
2.1 ± 0.2
Cathode Mark
2
1
1 Cathode
2 Anode
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
DO-214
DO-214
--
0.16
302A
Lot No.