HAT2044R
Silicon N Channel Power MOS FET
Power Switching
ADE-208-722A (Z)
2nd Edition
February 1999
Features
·
Capable of 2.5 V gate drive
·
Low drive current
·
High density mounting
·
Low on-resistance
R
DS(on)
= 6.5 m
typ (at V
GS
= 4.5V)
Outline
SOP8
1 2
3
4
5
6
7
8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
S S S
D D D
4
1 2
3
5 6
7 8
HAT2044R
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±
12
V
Drain current
I
D
15
A
Drain peak current
I
D(pulse)
Note1
120
A
Body-drain diode reverse drain current
I
DR
15
A
Channel dissipation
Pch
Note2
2.5
W
Channel temperature
Tch
150
°
C
Storage temperature
Tstg
55 to + 150
°
C
Note:
1. PW
10
µ
s, duty cycle
1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
±
0.1
µ
A
V
GS
=
±
12 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
1
µ
A
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
0.4
--
1.4
V
V
DS
= 10 V,
I
D
= 1 mA
Static drain to source on state
R
DS(on)
--
6.5
9.0
m
I
D
= 8 A, V
GS
= 4.5 V
Note3
resistance
R
DS(on)
--
7.0
9.5
m
I
D
= 8 A, V
GS
= 4.0 V
Note3
R
DS(on)
--
9.0
13.0
m
I
D
= 8 A, V
GS
= 2.5 V
Note3
Forward transfer admittance
|y
fs
|
24
40
--
S
I
D
= 8 A, V
DS
= 10 V
Note3
Input capacitance
Ciss
--
3420
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
950
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
480
--
pF
f = 1 MHz
Total gate charge
Qg
--
48
--
nc
V
DD
= 10 V
Gate to source charge
Qgs
--
32
--
nc
V
GS
= 4 V
Gate to drain charge
Qgd
--
16
--
nc
I
D
= 15 A
Turn-on delay time
t
d(on)
--
45
--
ns
V
GS
= 4 V, I
D
= 8 A
Rise time
t
r
--
285
--
ns
V
DD
10 V
Turn-off delay time
t
d(off)
--
470
--
ns
Fall time
t
f
--
360
--
ns
Bodydrain diode forward voltage
V
DF
--
0.85
1.1
V
IF = 15 A, V
GS
= 0
Note3
Bodydrain diode reverse
recovery time
t
rr
--
45
--
ns
IF = 15 A, V
GS
= 0
diF/ dt = 20 A/
µ
s
Note:
3. Pulse test
HAT2044R
3
Main Characteristics
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
1
2
3
4
5
Tc = 75°C
25°C
25°C
4.0
3.0
2.0
1.0
0
50
100
150
200
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
V = 10 V
Pulse Test
DS
500
Ta = 25 °C
1 shot Pulse
PW = 10 ms
10 µs
100 µs
Operation in
this area is
limited by R
DS(on)
Note 4
DC Operation (PW < 10 s)
1 ms
V = 1.5 V
GS
10V
4 V
2.0 V
Pulse Test
HAT2044R
4
Gate to Source Voltage V (V)
GS
Drain to Source Voltage V (V)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
0.20
0.16
0.12
0.08
0.04
0
2
4
6
8
10
20
10
2
5
1
0.5
2
5
20
50
20
16
12
8
4
40
0
40
80
120
160
0
Pulse Test
I = 10 A
D
2 A
5 A
0.1
1
10
100
0.2
100
50
V = 4 V
GS
2.5 V
Pulse Test
R (m )
DS(on)
I = 2 A, 5 A, 10 A
D
2 A, 5 A, 10 A
V = 4 V
GS
4.5 V
Pulse Test
3
30
0.1
1
10
100
0.3
10
100
30
1
0.3
3
0.1
Tc = 25 °C
DS
V = 10 V
Pulse Test
75 °C
25 °C
4.5 V
2 A, 5 A, 10 A
2.5 V
HAT2044R
5
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.2
0.5
1
2
5
10
20
100
20
50
10
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
50
40
30
20
10
0
10
8
6
4
2
20
40
60
80
100
0
1000
200
500
100
20
50
10
0.1
di/dt = 20 A/µs
V = 0, Ta = 25°C
GS
V
GS
V
DS
V = 5 V
10 V
20 V
DD
V = 20 V
10 V
5 V
DD
I = 15 A
D
0.2
0.5
1
2
5
10
20
0.1
V = 4 V, V = 10 V
RG = 50 , duty < 1 %
GS
DS
t f
r
t
d(off)
t
d(on)
t
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