HAF2015RJ

Silicon N Channel MOS FET Series

Power Switching

ADE-208-933 (Z)

1st. Edition

Dec. 2000

This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has the
builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate
voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

Logic level operation (5 to 6 V Gate drive)

High endurance capability against to the short circuit

Builtin the over temperature shutdown circuit

Temperature hysteresis type.

High density mounting.

Outline

1 2

1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain

SOP-8

MOS1

MOS2

Gate resistor

Tmperature
sencing
circuit

self
return
circuit

Gate
shutdown
circuit

Tmperature
sencing
circuit

Gate
shutdown
circuit

Gate resistor

self
return
circuit

HAF2015RJ

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

DSS

Gate to source voltage

GSS

Gate to source voltage

GSS

2.5

Drain current

Drain peak current

D(pulse)

Note1

Body-drain diode reverse drain current

Avalanche current

Note4

0.54

Avalanche energy

Note4

Channel dissipation

Pch

Note2

Channel dissipation

Pch

Note3

1.5

Channel temperature

Tch

150

Storage temperature

Tstg

55 to +150

Note:

1. PW

s, duty cycle

1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40

1.6mm), PW

10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40

1.6mm), PW

10s

4. Tch = 25

C , Rg > 50

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

3.5

1.2

Input current

IH1

100

ľA

Vi = 5V, V

= 0

(Gate non shut down)

IH2

ľA

Vi = 3.5V, V

= 0

ľA

Vi = 1.2V, V

= 0

Input current

IH(sd)1

0.53

Vi = 8V, V

= 0

(Gate shut down)

IH(sd)2

0.2

Vi = 3.5V, V

= 0

Shut down temperature

175

Channel temperature

Hysteresis temperature

Thr

120

Channel temperature

Gate operation voltage

3.5

HAF2015RJ

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

0.7

= 3.5 V, V

= 2 V

Drain current

= 1.2 V, V

= 2 V

Drain to source breakdown
voltage

(BR)DSS

= 10 mA, V

= 0

Gate to source breakdown
voltage

(BR)GSS

= 300

A, V

= 0

Gate to source breakdown
voltage

(BR)GSS

2.5

= 100

A, V

= 0

Gate to source leak current

GSS1

100

= 5 V, V

= 0

GSS2

= 3.5 V, V

= 0

GSS3

= 1.2 V, V

= 0

GSS4

100

= 2.4 V, V

= 0

Input current (shut down)

GS(op)1

0.53

= 8 V, V

= 0

GS(op)2

0.2

= 3.5 V, V

= 0

Zero gate voltege drain current

DSS1

= 60 V, V

= 0

Zero gate voltege drain current

DSS2

= 48 V, V

= 0

Ta = 125°C

Gate to source cutoff voltage

GS(off)

1.4

2. 5

= 1 mA, V

= 10V

Static drain to source on state
resistance

DS(on)

130

200

= 1 A, V

= 5 V

Note5

Static drain to source on state
resistance

DS(on)

110

160

= 1 A, V

= 10 V

Note5

Forward transfer admittance

0.5

2.5

= 1 A, V

= 10 V

Note5

Output capacitance

Coss

139

= 10V , V

= 0

f = 1 MHz

Turn-on delay time

d(on)

4.2

ľs

= 1 A, V

= 5 V

Rise time

ľs

= 30

Turn-off delay time

d(off)

ľs

Fall time

ľs

Bodydrain diode forward
voltage

0.82

= 2A, V

= 0

Bodydrain diode reverse
recovery time

= 2A, V

= 0

diF/ dt = 50 A/ľs

Over load shut down
operation time

Note6

os1

= 5 V, V

= 16 V

Note:

5. Pulse test

6. Including the junction temperature rise of the over loaded condition

HAF2015RJ

Main Characteristics

4.0

3.0

2.0

1.0

100

150

200

Channel Dissipation Pch (W)

Case Temperature Tc (

Power vs. Temperature Derating

0.2

0.5

0.1

0.05

0.03

0.5

50 100

100

1 ms

PW = 10 ms

Operation in this area
is limited by R

DS(on)

Thermal shut down
Operation area

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

10 V

8 V

V = 3.5 V

6 V

5 V

4 V

Drain Current I (A)

Typical Output Characteristics

Pulse Test

2.5

1.5

0.5

Tc = -25

Gate to Source Voltage V (V)

Typical Transfer Characteristics

V = 10 V

Pulse Test

Drain to Source Voltage V (V)

Drain Current I (A)

Test Congition:
When using the glass epoxy board
(FR4 40

1.6mm), PW < 10 s

Note7

Note7:
When using the glass epoxy board
(FR4 40

1.6 mm)

1 Dr

ive Oper

ation

2 Dr

ive Oper

ation

Ta = 25

1 shot Pulse
1 Drive Operation

DC Operation

10s

HAF2015RJ

0.25

0.2

0.15

0.1

0.05

0.5 A

0.2 A

I = 1 A

Pulse Test

Gate to Source Voltage V (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

500

0.1 0.2

0.5

200

100

V = 5 V

Pulse Test

Drain Current (A)

Drain to Source On State Resistance

)

DS(on)

Static Drain to Source Sate Resistance

vs. Drain Current

V = 10 V

0.25

0.2

0.15

0.1

0.05

-40

120

160

V = 5 V

I = 1 A

Pulse Test

Case Temperature Tc (

Static Drain to Source on State Resistance

vs. Temperature

I = 1 A

V = 10 V

0.2

0.1

0.5

0.05

0.1

0.2

0.5

Tc = -25

|yfs| (S)

Forward Transfer Admittance vs.

Drain Current

Forward Transfer Admittance

V = 10 V
Pulse Test

Drain to Source On State Resistance

)

DS(on)

Drain Current (A)

0.5 A, 0.2 A

HAF2015RJ

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

Body to Drain Diode Reverse

Recovery Time

Drain Current I (A)

Switching Time t (

Switching Characteristics

0.4

0.8

1.2

1.6

2.0

V = 5 V

0 V

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Reverse Drain Current vs.

Souece to Drain Voltage

1000

100

Capacitance Coss (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.
Drain to Source Voltage

500

0.01 0.02

0.05 0.1 0.2

0.5

200

100

di / dt = 50 A /

V = 0, Ta = 25

0.01 0.02

0.05 0.1 0.2

0.5

100

V = 5 V, V = 30 V
PW = 300

s, duty

1 %

t f

d (on)

d (off)

V = 0
f = 1 MHz

Pulse Test

HAF2015RJ

100

1 m

10 m

100 m

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

100

1000

10000

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

D =

ch-f(t) = s (t) ch - f
ch-f = 125

C/W, Ta = 25

When using the glass epoxy board
(FR4 40

1.6mm)

100

1 m

10 m

100 m

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

100

1000

10000

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

D =

ch-f(t) = s (t) ch - f
ch-f = 166

C/W, Ta = 25

When using the glass epoxy board
(FR4 40

1.6mm)

HAF2015RJ

Cautions

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or medical equipment for life support.

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maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
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Part Number HAF2015RJ