HAF2002
Silicon N Channel MOS FET Series
Power Switching
ADE-208-503 A (Z)
2nd. Edition
October 1997
Features
This FET has the over temperature shutdown capability sensing to the junction temperature.
This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit
operation to shutdown the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
·
Logic level operation (4 to 6 V Gate drive)
·
High endurance capability against to the short circuit
·
Builtin the over temperature shutdown circuit
·
Latch type shutdown operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut
down
Circuit
D
S
G
1. Gate
2. Drain
3. Source
TO220FM
1
2
3
HAF2002
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
10
--
--
A
V
GS
= 3.5V, V
DS
= 2V
Drain current
I
D2
--
--
10
mA
V
GS
= 1.2V, V
DS
= 2V
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
16
--
--
V
I
G
= 100
µ
A, V
DS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
2.8
--
--
V
I
G
= 100
µ
A, V
DS
= 0
Gate to source leak current
I
GSS1
--
--
100
µ
A
V
GS
= 8V, V
DS
= 0
I
GSS2
--
--
50
µ
A
V
GS
= 3.5V, V
DS
= 0
I
GSS3
--
--
1
µ
A
V
GS
= 1.2V, V
DS
= 0
I
GSS4
--
--
100
µ
A
V
GS
= 2.4V, V
DS
= 0
Input current (shut down)
I
GS(op)1
--
0.8
--
mA
V
GS
= 8V, V
DS
= 0
I
GS(op)2
--
0.35
--
mA
V
GS
= 3.5V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
250
µ
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.25
V
I
D
= 1mA, V
DS
= 10V
Static drain to source on state
resistance
R
DS(on)
--
50
65
m
I
D
= 10A, V
GS
= 4V
Note3
Static drain to source on state
resistance
R
DS(on)
--
30
43
m
I
D
= 10A, V
GS
= 10V
Note3
Forward transfer admittance
|y
fs
|
6
12
--
S
I
D
= 10A, V
DS
= 10V
Note3
Output capacitance
Coss
--
630
--
pF
V
DS
= 10V , V
GS
= 0
f = 1 MHz
Turn-on delay time
t
d(on)
--
7.5
--
µ
s
I
D
= 5A, V
GS
= 5V
Rise time
t
r
--
29
--
µ
s
R
L
= 6
Turn-off delay time
t
d(off)
--
34
--
µ
s
Fall time
t
f
--
26
--
µ
s
Bodydrain diode forward
voltage
V
DF
--
1.0
--
V
I
F
= 20A, V
GS
= 0
Bodydrain diode reverse
recovery time
t
rr
--
110
--
ns
I
F
= 20A, V
GS
= 0
diF/ dt =50A/
µ
s
Over load shut down
t
os1
--
1.8
--
ms
V
GS
= 5V, V
DD
= 12V
operation time
Note4
t
os2
--
0.7
--
ms
V
GS
= 5V, V
DD
= 24V
Note:
3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load
condition.
See characteristic curve of HAF2001.
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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