2SK2685

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

DSS

Gate to source voltage

GSO

Gate to drain voltage

GDO

Drain current

Channel power dissipation

Pch

100

Channel temperature

Tch

125

Storage temperature

Tstg

55 to +125

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Gate to source leak current

GSS

= 6 V, V

= 0

Gate to source cutoff voltage

GS(off)

0.3

2.0

= 3 V, I

= 100

Drain current

DSS

= 3 V, V

= 0

(Pulse Test)

Forward transfer admittance

= 3 V, I

= 10 mA,

f = 1 kHz

Associated gain

17.0

= 3 V, I

= 10 mA,

f = 2 GHz

Associated gain

15.2

= 3 V, I

= 3 mA,

f = 2 GHz

Associated gain

21.4

= 3 V, I

= 10 mA,

f = 900 MHz

Associated gain

19.7

= 3 V, I

= 3 mA,

f = 900 MHz

Minimum noise figure

Fmin

0.83

= 3 V, I

= 10 mA,

f = 2 GHz

Minimum noise figure

Fmin

1.08

= 3 V, I

= 3 mA,

f = 2 GHz

Minimum noise figure

Fmin

0.52

1.0

= 3 V, I

= 10 mA,

f = 900 MHz

Minimum noise figure

Fmin

0.74

= 3 V, I

= 3 mA,

f = 900 MHz

Note:

Marking is "ZT".

2SK2685

200

150

100

Ambient Temperature Ta (

Channel Power Dissipation Pch (mW)

200

150

100

Maximum Channel Power

Dissipation Curve

Typical Output Characteristics

Drain to Source Voltage V

(V)

Drain Current I

(mA)

= 0.9 V

0.8 V

0.7 V

0.6 V

0.5 V

0.4 V

Pulse Test

0.3 V

0.1 V

Typical Transfer Characteristics

100

2.0

Gate to Source Voltage V

(V)

1.6

1.2

0.8

0.4

Drain Current I

(mA)

= 3 V

Pulse Test

Forward Transfer Admittance vs.

Gate to Source Voltage

100

Gate to Source Voltage V

(V)

Forward Transfer Admittance

yfs

(mS)

2.0

1.6

1.2

0.8

0.4

= 3 V

Pulse Test

2SK2685

Forward Transfer Admittance vs.

Drain Current

Drain Current I

(mA)

Forward Transfer Admittance

yfs

(mS)

= 3 V

Pulse Test

100

3 V

1 V

Associated Gain vs. Drain Current

Drain Current I

(mA)

Associated Gain Ga (dB)

= 1 V

f = 2 GHz

f = 900 MHz

Minimum Noise Figure vs. Drain Current

Drain Current I

(mA)

Minimum Noise Figure Fmin (dB)

3 V

1 V

= 1 V

f = 2 GHz

f = 900 MHz

Associated Gain vs. Drain to Source Voltage

Drain to Source Voltage V

(V)

Associated Gain Ga (dB)

2 GHz

f = 900 MHz

= 10 mA

2SK2685

S11 Parameter vs. Frequency

0.8

0.6

0.4

0.2

1.5

0.2

0.4 0.6 0.8

3 4 5

1.0

1.5

Condition : I

= 10 mA, Zo = 50

200 to 2000 MHz (200 MHz step)
(V

= 1 V)

= 3 V)

S12 Parameter vs. Frequency

120

150

180

Scale : 0.02/div.

Condition : I

= 10 mA, Zo = 50

200 to 2000 MHz (200 MHz step)
(V

= 1 V)

= 3 V)

S21 Parameter vs. Frequency

120

150

180

Scale : 2/div.

Condition : I

= 10 mA, Zo = 50

200 to 2000 MHz (200 MHz step)
(V

= 1 V)

= 3 V)

S22 Parameter vs. Frequency

0.8

0.6

0.4

0.2

1.5

0.2

0.4 0.6 0.8

3 4 5

1.0

1.5

Condition : I

= 10 mA, Zo = 50

200 to 2000 MHz (200 MHz step)
(V

= 1 V)

= 3 V)

2SK2685

S Parameter (V

= 1 V, I

= 10 mA, Z

= 50 )

Freq.

S11

S21

S12

S22

(MHz)

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

200

0.996

4.8

5.12

175.8

0.00691

89.8

0.688

3.2

400

0.980

9.5

5.13

169.9

0.0143

88.2

0.682

6.5

600

0.977

15.0

5.07

165.4

0.0210

83.3

0.674

10.6

800

0.970

19.9

4.94

161.6

0.0276

81.5

0.668

13.8

1000

0.952

24.4

4.84

156.5

0.0399

79.3

0.658

17.2

1200

0.938

29.2

4.74

152.7

0.0404

76.0

0.648

20.7

1400

0.916

34.0

4.67

147.7

0.0462

74.8

0.636

23.7

1600

0.896

38.2

4.55

144.1

0.0523

73.1

0.622

27.1

1800

0.882

42.9

4.47

140.0

0.0578

72.0

0.611

29.9

2000

0.859

47.1

4.36

135.8

0.0630

70.3

0.597

33.1

S Parameter (V

= 3 V, I

= 10 mA, Z

= 50

)

Freq.

S11

S21

S12

S22

(MHz)

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

200

0.998

4.0

5.13

175.8

0.00581

89.8

0.802

3.2

400

0.988

9.2

5.14

170.1

0.0110

85.5

0.796

6.5

600

0.978

14.5

5.08

165.2

0.0163

83.3

0.790

9.8

800

0.968

19.4

4.95

161.4

0.0216

82.0

0.783

13.3

1000

0.953

24.2

4.85

156.4

0.0363

79.2

0.774

16.4

1200

0.937

28.7

4.75

152.5

0.0312

76.5

0.764

19.4

1400

0.917

33.3

4.68

147.8

0.0358

75.3

0.753

22.5

1600

0.900

37.5

4.57

144.0

0.0401

73.2

0.742

25.4

1800

0.883

41.9

4.49

140.1

0.0442

72.8

0.731

28.1

2000

0.858

46.1

4.37

135.9

0.0477

71.4

0.718

31.1

Datasheet Title

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,

copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor

products.

1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.

If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.

2. Disposal of this product must be handled, separately from other general refuse, by a specialist

processing contractor in the same way as dangerous items.

Datasheet Title

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533

URL

NorthAmerica

: http:semiconductor.hitachi.com/

Europe

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

Asia (Taiwan)

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong)

: http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223

For further information write to:

Part Number 2SK2685