Application
High speed power switching
Features
· Low onresistance
· High speed switching
· Low drive current
· 4 V gate drive device can be driven from
5 V source
· Suitable for Switching regulator, DC DC
converter
· Avalanche Ratings
1
2, 4
3
LDPAK
3
2
1
4
3
2
1
4
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
--------------------------------------------------------------------------------------
Drain to source voltage
V
DSS
60
V
--------------------------------------------------------------------------------------
Gate to source voltage
V
GSS
±20
V
--------------------------------------------------------------------------------------
Drain current
I
D
30
A
--------------------------------------------------------------------------------------
Drain peak current
I
D(pulse)
*
120
A
--------------------------------------------------------------------------------------
Bodydrain diode reverse drain current
I
DR
30
A
--------------------------------------------------------------------------------------
Avalanche current
I
AP
***
30
A
--------------------------------------------------------------------------------------
Avalanche energy
E
AR
***
77
mJ
--------------------------------------------------------------------------------------
Channel dissipation
Pch**
75
W
--------------------------------------------------------------------------------------
Channel temperature
Tch
150
°C
--------------------------------------------------------------------------------------
Storage temperature
Tstg
55 to +150
°C
--------------------------------------------------------------------------------------
*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
***
Value at Tch = 25 °C, Rg
50
2SJ280
L
, 2SJ280
S
Silicon P Channel MOS FET
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
--------------------------------------------------------------------------------------
Drain to source breakdown
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
voltage
--------------------------------------------------------------------------------------
Gate to source breakdown
V
(BR)GSS
±20
--
--
V
I
G
= ±200 µA, V
DS
= 0
voltage
--------------------------------------------------------------------------------------
Gate to source leak current
I
GSS
--
--
±10
µA
V
GS
= ±16 V, V
DS
= 0
--------------------------------------------------------------------------------------
Zero gate voltage drain current
I
DSS
--
--
250
µA
V
DS
= 50 V, V
GS
= 0
--------------------------------------------------------------------------------------
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.25
V
I
D
= 1 mA, VDS = 10 V
--------------------------------------------------------------------------------------
Static drain to source on state
R
DS(on)
--
0.033
0.043
I
D
= 15 A
resistance
V
GS
= 10 V *
------------------------------------------------
--
0.045
0.06
I
D
= 15 A
V
GS
= 4 V *
--------------------------------------------------------------------------------------
Forward transfer admittance
|y
fs
|
17
25
--
S
I
D
= 15 A
V
DS
= 10 V *
--------------------------------------------------------------------------------------
Input capacitance
Ciss
--
3300
--
pF
V
DS
= 10 V
----------------------------------------------------------------
Output capacitance
Coss
--
1500
--
pF
V
GS
= 0
----------------------------------------------------------------
Reverse transfer capacitance
Crss
--
480
--
pF
f = 1 MHz
--------------------------------------------------------------------------------------
Turnon delay time
t
d(on)
--
30
--
ns
I
D
= 15 A
----------------------------------------------------------------
Rise time
t
r
--
170
--
ns
V
GS
= 10 V
----------------------------------------------------------------
Turnoff delay time
t
d(off)
--
500
--
ns
R
L
= 2
----------------------------------------------------------------
Fall time
t
f
--
390
--
ns
--------------------------------------------------------------------------------------
Bodydrain diode forward
V
DF
--
1.5
--
V
I
F
= 30 A, V
GS
= 0
voltage
--------------------------------------------------------------------------------------
Bodydrain diode reverse
t
rr
--
200
--
ns
IF = 30 A, V
GS
= 0,
recovery time
diF / dt = 50 A / µs
--------------------------------------------------------------------------------------
* Pulse Test
2SJ280 L , 2SJ280 S
Case Temperature Tc (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
0
25
50
75
50
100
150
Maximum Safe Operation Area
500
300
100
30
10
3
1
0.5
0.1 0.3
1
3
10
30 100
Drain to Source Voltage V (V)
Drain Current I (A)
D
DS
Operation in this area
is limited by R
DS(on)
1 ms
10 s
µ
100 s
µ
PW = 10 ms
DC Operation (Tc = 25°C)
Ta = 25°C
2
Typical Output Characteristics
50
40
30
20
10
0
0
4
6
8
10
Drain to Source Voltage V (V)
Drain Current I (A)
D
DS
6 V
3.5 V
4 V
2.5 V
V = 2 V
10 V
3 V
GS
Typical Transfer Characteristics
50
40
30
20
10
0
1
2
3
4
5
Gate to Source Voltage V (V)
Drain Current I (A)
D
GS
Tc = 25°C
75°C
Pulse Test
V = 10 V
GS
25°C
2SJ280 L , 2SJ280 S
Drain-Source Saturation Voltage
vs. Gate-Source Voltage
0
2
4
6
8
10
0.4
0.8
1.2
1.6
2.0
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage
V (V)
GS
DS (on)
Pulse Test
20 A
10 A
I = 30 A
D
Static Drain-Source on State
Resistance vs. Drain Current
2
5
10 20
50 100 200
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Drain Current I (A)
Static Drain-Source on State
Resistance R ( )
DS(on)
D
10 V
V = 4 V
GS
Static Drain-Source on State
Resistance vs. Temperature
Case Temperature T (°C)
C
Static Drain-Source on State
Resistance R ( )
DS(on)
0.1
0.08
0.06
0.04
0.02
40
0
40
80
120
160
Pulse test
10 V
I = 30 A
D
V = 4 V
GS
I = 30 A
D
10 A, 20 A
10 A, 20 A
0
Forward Transfer Admittance
vs. Drain Current
100
50
20
10
5
2
1
0.5
1
2
5
20
50
10
Drain Current I (A)
D
Forward Transfer Admittance
|y | (s)
fs
Tc = 25°C
25°C
Pulse Test
V = 10 V
DS
75°C
2SJ280 L , 2SJ280 S
Body-Drain Diode Reverse
Recovery Time
Reverse Drain Current I (A)
DR
Reverse Recovery Time t (ns)
rr
1
2
5
10 20
50 100
5
10
20
50
100
200
500
di/dt = 50 A/ s, V = 0
Ta = 25°C
µ
GS
Typical Capacitance
vs. Drain-Source Voltage
10000
1000
100
10
0
10
20
30
40
50
Drain to Source Voltage V (V)
DS
Capacitance C (pF)
Ciss
Coss
Crss
V = 0,
f = 1 MHz
GS
Dynamic Input Characteristics
0
20
40
60
80
100
0
40
80
120
160
200
0
4
8
12
16
20
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
V = 10 V
25 V
50 V
DD
25 V
50 V
V = 10 V
DD
V
I = 30 A
DS
D
Gate to Source Voltage V (V)
GS
V
GS
Switching Characteristics
Drain Current I (A)
D
0.5 1
2
5
10 20
50
10
20
50
100
200
500
1000
Switching Time t (ns)
t
t (off)
GS
µ
DD
t (on)
t
<
=
=
:
V = 10 V, V 30 V
PW = 2 s, duty 1%
d
d
f
r
2SJ280 L , 2SJ280 S
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Pulse Test
5 V
0, 5V
V = 10 V
GS
Channel Temperature Tch (°C)
Repetive Avaranche Energy E (mJ)
AR
I = 30 A
V = 25 V
duty < 0.1%
Rg 50
DD
AP
>
=
Maxmum Avalanche Energy vs.
Channel Temperature Derating
100
80
60
40
20
0
25
50
75
100
125
150
V
Monitor
DS
I
Monitor
AP
V
DD
Rg
Vin
15 V
50
D.U.T
V
DD
0
I
D
I
AP
V
DS
V
(BR)DSS
V
DSS
V
DD
V
DSS
E =
AR
2
1 · L · I ·
AP
2
L
Avalanche Test Circuit and Waveform
2SJ280 L , 2SJ280 S
Application
High speed power switching
Features
· Low onresistance
· High speed switching
· Low drive current
· 4 V gate drive device can be driven from
5 V source
· Suitable for Switching regulator, DC DC
converter
· Avalanche Ratings
TO220AB
1
2
3
1. Gate
2. Drain
3. Source
1
2
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
--------------------------------------------------------------------------------------
Drain to source voltage
V
DSS
60
V
--------------------------------------------------------------------------------------
Gate to source voltage
V
GSS
±20
V
--------------------------------------------------------------------------------------
Drain current
I
D
15
A
--------------------------------------------------------------------------------------
Drain peak current
I
D(pulse)
*
60
A
--------------------------------------------------------------------------------------
Bodydrain diode reverse drain current
I
DR
15
A
--------------------------------------------------------------------------------------
Avalanche current
I
AP
***
15
A
--------------------------------------------------------------------------------------
Avalanche energy
E
AR
***
19
mJ
--------------------------------------------------------------------------------------
Channel dissipation
Pch**
50
W
--------------------------------------------------------------------------------------
Channel temperature
Tch
150
°C
--------------------------------------------------------------------------------------
Storage temperature
Tstg
55 to +150
°C
--------------------------------------------------------------------------------------
*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
***
Value at Tch = 25 °C, Rg
50
2SJ290
Silicon P-Channel MOS FET
PDF 
ZIP