Application
High speed power switching
Features
· Low onresistance
· High speed switching
· Low drive current
· 4V gate drive device can be driven from
5V source.
· Suitable for Switching regulator, DC DC
converter
1
2, 4
3
DPAK1
3
2
1
4
1 2
4
3
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
--------------------------------------------------------------------------------------
Drain to source voltage
V
DSS
30
V
--------------------------------------------------------------------------------------
Gate to source voltage
V
GSS
±20
V
--------------------------------------------------------------------------------------
Drain current
I
D
7
A
--------------------------------------------------------------------------------------
Drain peak current
I
D(pulse)
*
28
A
--------------------------------------------------------------------------------------
Bodydrain diode reverse drain current
I
DR
7
A
--------------------------------------------------------------------------------------
Channel dissipation
Pch**
20
W
--------------------------------------------------------------------------------------
Channel temperature
Tch
150
°C
--------------------------------------------------------------------------------------
Storage temperature
Tstg
55 to +150
°C
--------------------------------------------------------------------------------------
*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
2SJ246
L
, 2SJ246
S
SILICON P-CHANNEL MOS FET
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
--------------------------------------------------------------------------------------
Drain to source breakdown
V
(BR)DSS
30
--
--
V
I
D
= 10 mA, V
GS
= 0
voltage
--------------------------------------------------------------------------------------
Gate to source breakdown
V
(BR)GSS
±20
--
--
V
I
G
= ±100 µA, V
DS
= 0
voltage
--------------------------------------------------------------------------------------
Gate to source leak current
I
GSS
--
--
±10
µA
V
GS
= ±16 V, V
DS
= 0
--------------------------------------------------------------------------------------
Zero gate voltage drain current
I
DSS
--
--
100
µA
V
DS
= 25 V, V
GS
= 0
--------------------------------------------------------------------------------------
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.5
V
V
DS
= 10 V, ID = 1 mA
--------------------------------------------------------------------------------------
Static drain to source on state
R
DS(on)
--
0.12
0.17
I
D
= 4 A
resistance
V
GS
= 10 V
------------------------------------------------
--
0.21
0.31
I
D
= 4 A
V
GS
= 4 V
--------------------------------------------------------------------------------------
Forward transfer admittance
|y
fs
|
3.0
5.0
--
S
V
DS
= 10 V
I
D
= 4 A
--------------------------------------------------------------------------------------
Input capacitance
Ciss
--
660
--
pF
V
DS
= 10 V
----------------------------------------------------------------
Output capacitance
Coss
--
465
--
pF
V
GS
= 0
----------------------------------------------------------------
Reverse transfer capacitance
Crss
--
180
--
pF
f = 1 MHz
--------------------------------------------------------------------------------------
Turnon delay time
t
d(on)
--
10
--
ns
V
GS
= 10 V
----------------------------------------------------------------
Rise time
t
r
--
55
--
ns
I
D
= 4 V
----------------------------------------------------------------
Turnoff delay time
t
d(off)
--
135
--
ns
R
L
= 7.5
----------------------------------------------------------------
Fall time
t
f
--
135
--
ns
--------------------------------------------------------------------------------------
Bodydrain diode forward
V
DF
--
1.2
--
V
I
F
= 7 A, V
GS
= 0
voltage
--------------------------------------------------------------------------------------
Bodydrain diode reverse
t
rr
--
90
--
µs
IF = 7 A, V
GS
= 0,
recovery time
di
F
/ dt = 50 A / µs
--------------------------------------------------------------------------------------
2SJ246 L , 2SJ246 S
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Power Dissipation Pch (W)
Power vs. Temperature Derating
50
30
10
3
1
0.3
0.1
0.3
1
3
10
30 50
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
DC Operation (Tc = 25°C)
10µs
100µs
PW = 10ms (1 shot)
1 ms
Operation in this area is
limited by R
DS(on)
Ta = 25°C
Maximum Safe Operation Area
10
8
6
4
2
0
2
4
6
8
10
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
3 V
V = 2.5 V
GS
3.5 V
Pulse test
4 V
5 V
10V
6 V
Typical Output Characteristics
10
8
6
4
2
0
1
2
3
4
5
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
V = 10 V
DS
75°C
Pulse test
25°C
Tc = 25°C
Typical Transfer Characteristics
2SJ246 L , 2SJ246 S
2.0
1.6
1.2
0.8
0.4
0
2
4
6
8
10
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage
DS(on)
I = 5 A
D
Pulse test
V (V)
2 A
1 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
2
1
0.5
0.2
0.1
0.05
0.1
1
10
100
Drain Current I (A)
D
Static Drain to Source on State Resistance
R (on) ( )
DS
Pulse test
10 V
V = 4 V
GS
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
40
0
40
80
120
160
Case Temperature Tc (°C)
R (on) ( )
DS
I = 5 A
D
Pulse test
0
Static Drain to Source on State Resistance
1 A
V = 4 V
GS
10 V
1 A, 2 A
5 A
2 A
Static Drain to Source on State
Resistance vs. Temperature
10
5
2
1
0.5
0.1 0.2
0.5
1
2
5
10
Drain Current I (A)
D
|y | (S)
fs
Pusle test
V = 10 V
DS
Tc = 25°C
25°C
75°C
Forward Transfer Admittance
Forward Transfer Admittance vs.
Drain Current
2SJ246 L , 2SJ246 S
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current I (A)
DR
Reverse Recovery Time t (ns)
di/dt = 50 A/µs, Ta = 25°C
V = 0, Pulse test
GS
Body to Drain Diode Reverse
Recovery Time
rr
10000
5000
2000
1000
500
200
100
0
10
20
30
40
50
Drain to Source Voltage V (V)
DS
Capacitance C (pF)
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
Typical Capacitance vs. Drain to
Source Voltage
0
20
40
60
80
0
8
16
24
32
40
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
V = 25 V
10 V
DD
0
4
8
12
16
20
100
V
GS
V
DS
I = 7 A
D
V = 10 V
25 V
DD
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
500
200
100
50
20
10
5
0.1 0.2
0.5
1
2
5
10
Drain Current I (A)
D
Switching Time t (ns)
V = 10 V, PW = 2 µs,
V = 30 V, duty 1 %
GS
DD
td(on)
td(off)
tf
tr
Switching Characteristics
<
=
:
2SJ246 L , 2SJ246 S
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Pulse test
5 V
10 V
0
V = 0, 5 V
GS
Reverse Drain Current vs. Source to
Drain Voltage
2SJ246 L , 2SJ246 S
3
1
0.3
0.1
0.03
0.01
10 µ
100 µ
1 m
10 m
Pulse Width PW (s)
Normalized Transient Thermal Impedance
100 m
1
10
s (t)
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) · ch c
ch c = 6.25 °C/W, Tc = 25 °C
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
Normal Transient Thermal Impedance vs. Pulse Width
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
t
t (on)
Vin
90%
90%
10%
10%
Vout
t (off)
Vout
Monitor
50
90%
10%
t
f
r
Switching Time Test Circuit Waveform
d
d
.
.
2SJ246 L , 2SJ246 S
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