2SB566(K), 2SB566A(K)
Silicon PNP Triple Diffused
Application
Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SB566(K)
2SB566A(K)
Unit
Collector to base voltage
V
CBO
70
70
V
Collector to emitter voltage
V
CEO
50
60
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
4
4
A
Collector peak current
I
C(peak)
8
8
A
Collector power dissipation
P
C
*
1
40
40
W
Junction temperature
Tj
150
150
°
C
Storage temperature
Tstg
55 to +150
55 to +150
°
C
Note:
1. Value at T
C
= 25
°
C.
2SB566(K), 2SB566A(K)
2
Electrical Characteristics (Ta = 25°C)
2SB566(K)
2SB566A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
70
--
--
70
--
--
V
I
C
= 10
µ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
50
--
--
60
--
--
V
I
C
= 50 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 10
µ
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1
--
--
1
µ
A
V
CB
= 50 V, I
E
= 0
DC current tarnsfer ratio h
FE1
*
1
60
--
200
60
--
200
V
CE
= 4 V, I
C
= 1 A
h
FE2
35
--
--
35
--
--
V
CE
= 4 V, I
C
= 0.1 A
Collector to emitter
saturation voltage
V
CE(sat)
--
--
1.0
--
--
1.0
V
I
C
= 2 A, I
B
= 0.2 A
Base to emitter
saturation voltage
V
BE(sat)
--
--
1.2
--
--
1.2
V
I
C
= 2 A, I
B
= 0.2 A
Gain bandwidth product f
T
--
15
--
--
15
--
MHz
V
CE
= 4 V, I
C
= 0.5 A
Turn on time
t
on
--
0.3
--
--
0.3
--
µ
s
V
CC
= 10.5 V
Turn off time
t
off
--
3.0
--
--
3.0
--
µ
s
I
C
= 10I
B1
= 10I
B2
=
Storage time
t
stg
--
2.5
--
--
2.5
--
µ
s
0.5 A
Note:
1. The 2SB566(K) and 2SB566A(K) are grouped by h
FE1
as follows.
B
C
60 to 120
100 to 200
2SB566(K), 2SB566A(K)
3
60
40
20
0
50
100
150
C
Collector power dissipation P (W)
Case temperature T
C
(
°
C)
Maximum Collector Dissipation Curve
10
1
Collector current I
C
(A)
5
2
1.0
0.5
0.2
0.1
2
10
5
20
50 100
(60 V, 0.15 A)
2SB566A K
I
C
max (Continuous) DC Operation
T
C
= 25
°
C
(50 V, 0.22 A)
2SB566 K
Area Safe Operation
Collector to emitter voltage V
CE
(V)
0
Collector current I
C
(A)
5
4
3
2
1
T
C
= 25
°
C
2
4
6
8
10
I
B
= 0
10 mA
20
30
40
50
60
70
Typical Output Characteristics
Collector to emitter voltage V
CE
(V)
0
Collector current I
C
(A)
5
V
CE
= 4 V
2
1.0
0.2
0.1
0.05
0.02
0.01
0.5
0.4
0.8
1.2 1.4
1.0
0.6
0.2
T
C
= 75
°
C
25
25
Typical Transfer Characteristics
Base to emitter voltage V
BE
(V)
2SB566(K), 2SB566A(K)
4
1,000
0.01
DC current transfer ratio h
FE
T
C
= 75
°
C
500
200
100
50
20
10
5
V
CE
= 4V
25
°
C
0.02 0.05 0.1 0.2
2
1.0
0.5
5
25
°
C
DC Current Transfer Ratio
vs. Collector Current
Collector current I
C
(A)
1.4
0.01
Collector to emitter
saturation voltage V
CE(sat)
(V) 1.2
1.0
0.8
0.6
0.4
0.2
0.02 0.05 0.1 0.2 0.5 1.0 2
5
0
25
°
C
T
C
= 75
°
C
25
°
C
I
C
= 10 I
B
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current I
C
(A)
0.5
±
0.1
2.54
±
0.5
0.76
±
0.1
14.0
±
0.5
15.0
±
0.3
2.79
±
0.2
18.5
±
0.5
7.8
±
0.5
10.16
±
0.2
2.54
±
0.5
1.26
±
0.15
4.44
±
0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4
+0.2
0.1
3.6
+0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Unit: mm
PDF 
ZIP