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Part Number 2SA673A

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2SA673A(K)
Silicon PNP Epitaxial
Application
·
Low frequency amplifier
·
Medium speed switching
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SA673A(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
­50
V
Collector to emitter voltage
V
CEO
­50
V
Emitter to base voltage
V
EBO
­4
V
Collector current
I
C
­0.5
A
Collector power dissipation
P
C
0.4
W
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
­55 to +150
°
C
2SA673A(K)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
­50
--
--
V
I
C
= ­10
µ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
­50
--
--
V
I
C
= ­1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
­4
--
--
V
I
E
= ­10
µ
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
­0.5
µ
A
V
CB
= ­20 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
­0.5
µ
A
V
EB
= ­3 V, I
C
= 0
Base to emitter voltage
V
BE
--
­0.64
--
V
V
EB
= ­3 V, I
C
= ­10 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
­0.2
­0.6
V
I
C
= ­150 mA, I
B
= ­15 mA*
2
Base to emitter saturation
voltage
V
BE(sat)
--
­0.87
--
V
I
C
= ­150 mA, I
B
= ­15 mA*
2
DC current transfer ratio
h
FE
*
1
60
--
320
V
CE
= ­3 V, I
C
= ­10 mA
h
FE
10
--
--
V
CE
= ­3 V, I
C
= ­500 mA*
2
Gain bandwidth product
f
T
--
120
--
MHz
V
CE
= ­3 V, I
C
= ­10 mA
Turn on time
t
on
--
0.3
--
µ
s
V
CC
= ­10.3 V
Turn off time
t
off
--
0.6
--
µ
s
I
C
= 10 I
B1
= ­10 I
B2
= ­10 mA
Storage time
t
stg
--
0.4
--
µ
s
V
CC
= ­5 V,
I
C
= I
B1
= I
B2
= ­20 mA
Notes: 1. The 2SA673A(K) is grouped by h
FE
as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
See 2SA673A except for the above ­ mentioned characteristic curves.
2SA673A(K)
4
Switching Time Test Circuit
t
on
, t
off
Test Circuit
50
50
0.002
6 V
6 k
1 k
­10.3 V
6 k
D.U.T.
CRT
P.G.
tr, tf
15 ns
PW
5
µ
s
duty ratio
10%
+ ­
50
0.002
+ ­
Unit R : Q
C :
µ
F
Switching Time Test Circuit
t
stg
Test Circuit
200
50
0.002
­7 V
100
240
­5 V
1.0 215
D.U.T.
CRT
P.G.
tr
5 ns
PW
5
µ
s
duty ratio
2%
­ +
50
0.002
+ ­
Unit R : Q
C :
µ
F
0
0
­13 V
10%
Response Waveform
90%
90%
10%
Input
Output
t
on
t
off
0
0
9 V
10%
10%
Input
Output
t
stg
Response Waveform
2SA673A(K)
5
0
200
400
600
50
Ambient Temperature Ta (
°
C)
Collector Power Dissipation P
C
(mW)
Maximum Collector Dissipation Curve
100
150
­0.1
­1.0 ­2
­5 ­10 ­20 ­50 ­100 ­200 ­500
­0.2 ­0.5
0
­0.1
­0.2
­0.3
­0.4
­0.5
­0.6
­0.7
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
­0.1
­1.0 ­2
­5 ­10 ­20 ­50 ­100 ­200 ­500
­0.2 ­0.5
­0.5
­0.4
­0.6
­0.7
­0.8
­0.9
­1.0
­1.1
Collector Current I
C
(mA)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Base to Emitter Saturation Voltage vs.
Collector Current
I
C
= 10 I
B
­25
0
25
50
Ta = 75
°
C
­0.1
­0.3
­1.0
­3
­10
­30
0
10
20
30
40
50
60
70
Collector to Base Voltage V
CB
(V)
Emitter to Base Voltage V
EB
(V)
Emitter Input Capacitance C
ib
(pF)
Collector Output Capacitance C
ob
(pF)
Input and Output Capacitance
vs. voltage
f = 1 MHz
C
ib
(I
C
= 0)
C
ob
(I
E
= 0)