1SS118
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-297 (Z)
Rev. 0
Features
·
High average forward current. (I
O
= 200mA)
·
High reliability with glass seal.
Ordering Information
Type No.
Cathode band
Mark
Package Code
1SS118
Black
S118
DO-35
Outline
1. Cathode
2. Anode
S1
18
Cathode band
Type No.
1
2
1SS118
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
75
V
Reverse voltage
V
R
50
V
Peak forward current
I
FM
600
mA
Non-Repetitive peak forward surge current
I
FSM
*
4
A
Average forward current
I
O
200
mA
Power dissipation
Pd
500
mW
Junction temperature
Tj
175
°
C
Storage temperature
Tstg
65 to +175
°
C
Note:
Value at duration of 1
µ
s
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
--
--
1.0
V
I
F
= 10mA
Reverse current
I
R
--
--
0.1
µ
A
V
R
= 50V
Capacitance
C
--
--
3.5
pF
V
R
= 0V, f = 1MHz
Reverse recovery time
t
rr
--
--
3.0
ns
I
F
= 10mA, V
R
= 6V, Irr = 0.1I
R
,
R
L
= 50