S E M I C O N D U C T O R
3-29
HGTP12N60C3, HGT1S12N60C3,
HGT1S12N60C3S
24A, 600V, UFS Series N-Channel IGBTs
Features
· 24A, 600V at T
C
= 25
o
C
· 600V Switching SOA Capability
· Typical Fall Time . . . . . . . . . . . . . . 230ns at T
J
= 150
o
C
· Short Circuit Rating
· Low Conduction Loss
Formerly Developmental Type TA49123.
Description
The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3
TO-220AB
P12N60C3
HGT1S12N60C3
TO-262AA
S12N60C3
HGT1S12N60C3S
TO-263AB
S12N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
C
E
G
Packaging
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
COLLECTOR
(FLANGE)
GATE
EMITTER
January 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1997
File Number
4040.3
3-30
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP12N60C3, HGT1S12N60C3,
HGT1S12N60C3S
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
24
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
12
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
96
A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±
20
V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
±
30
V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA
24A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
104
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/
o
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
4
µ
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
13
µ
s
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
µ
A, V
GE
= 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
24
30
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
µ
A
V
CE
= BV
CES
T
C
= 150
o
C
-
-
1.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
-
1.65
2.0
V
T
C
= 150
o
C
-
1.85
2.2
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
µ
A,
V
CE
= V
GE
T
C
= 25
o
C
3.0
5.0
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
100
nA
Switching SOA
SSOA
T
J
= 150
o
C
R
G
= 25
V
GE
= 15V
L = 100
µ
H
V
CE(PK)
= 480V
80
-
-
A
V
CE(PK)
= 600V
24
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.6
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
48
55
nC
V
GE
= 20V
-
62
71
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= 150
o
C,
I
CE
= I
C110,
V
CE(PK)
= 0.8 BV
CES,
V
GE
= 15V,
R
G
= 25
,
L = 100
µ
H
-
14
-
ns
Current Rise Time
t
RI
-
16
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
270
400
ns
Current Fall Time
t
FI
-
210
275
ns
Turn-On Energy
E
ON
-
380
-
µ
J
Turn-Off Energy (Note 3)
E
OFF
-
900
-
µ
J
Thermal Resistance
R
JC
-
-
1.2
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were
tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the
true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
3-31
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
4
6
8
10
12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250
µ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -40
o
C
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
µ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
40
50
60
70
80
10.0V
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
30
0
1
2
3
4
5
40
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
µ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
10
20
50
70
80
60
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
30
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
µ
s
10
20
40
50
60
70
80
25
50
75
100
125
150
0
5
10
15
20
25
I
CE
, DC COLLECT
OR CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
SC
, PEAK SHOR
T CIRCUIT CURRENT
(A)
20
60
80
120
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
µ
s)
10
11
12
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
14
15
13
140
100
40
I
SC
t
SC
5
10
15
20
V
CE
= 360V, R
GE
= 25
, T
J
= 125
o
C
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
3-32
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
Typical Performance Curves
(Continued)
t
D(ON)I
, TURN-ON DELA
Y TIME (ns)
10
20
30
5
10
15
20
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
25
30
50
V
GE
= 10V
V
GE
= 15V
T
J
= 150
o
C, R
G
= 25
, L = 100
µ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
D(OFF)I
, TURN-OFF DELA
Y TIME (ns)
400
300
200
100
5
10
15
20
25
30
T
J
= 150
o
C, R
G
= 25
, L = 100
µ
H, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
RI
,
TURN-ON RISE TIME
(ns)
5
10
100
5
10
15
20
25
30
V
GE
= 15V
V
GE
= 10V
200
T
J
= 150
o
C, R
G
= 25
, L = 100
µ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
t
FI
,
F
ALL TIME
(ns)
100
5
10
15
20
25
30
200
300
T
J
= 150
o
C, R
G
= 25
, L = 100
µ
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
90
80
I
CE
, COLLECTOR-EMITTER CURRENT (A)
0
5
10
15
20
E
ON
, TURN-ON ENERGY LOSS
(mJ)
V
GE
= 15V
0.5
1.0
1.5
2.0
25
30
V
GE
= 10V
T
J
= 150
o
C, R
G
= 25
, L = 100
µ
H, V
CE(PK)
= 480V
I
CE
, COLLECTOR-EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS
(mJ)
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
0
T
J
= 150
o
C, R
G
= 25
, L = 100
µ
H, V
CE(PK)
= 480V
V
GE
= 10V or 15V
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
3-33
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
5
10
20
30
10
100
200
1
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
(DUTY FACTOR = 50%)
R
JC
= 1.2
o
C/W
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 25
, L = 100
µ
H
V
GE
= 15V
V
GE
= 10V
V
CE(PK)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR-EMITTER CURRENT (A)
0
100
200
300
400
500
600
0
20
40
60
80
T
J
= 150
o
C, V
GE
= 15V, R
G
= 25
, L = 100
µ
H
100
LIMITED BY
CIRCUIT
C
OES
C
RES
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C, CAP
A
CIT
ANCE (pF)
C
IES
FREQUENCY = 1MHz
V
GE
, GA
TE-EMITTER V
O
L
T
A
GE (V)
V
CE
, COLLECT
OR - EMITTER
V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
I
G
REF = 1.276mA, R
L
= 50
, T
C
= 25
o
C
0
240
120
360
480
600
15
12
9
6
3
0
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
10
20
30
40
50
60
0
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
JC
,
NORMALIZED THERMAL RESPONSE
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
3-34
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler's body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as "ECCOSORBD
TM
LD26" or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rat-
ing of V
GEM
. Exceeding the rated V
GE
can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate pro-
tection is required an external zener is recommended.
ECCOSORBD
TM
is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device
Figure 13) is presented as a guide for estimating device per-
formance for a specific application. Other typical frequency
vs collector current (I
CE
) plots are possible using the infor-
mation shown for a typical unit in Figures 4, 7, 8, 11 and 12.
The operating frequency plot (Figure 13) of a typical device
shows f
MAX1
or f
MAX2
whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated junc-
tion temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. t
D(OFF)I
and t
D(ON)I
are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JMAX
.
t
D(OFF)I
is important when controlling output ripple under a
lightly loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JMAX
-
T
C
)/R
JC
. The sum of device switching and conduction losses
must not exceed P
D
. A 50% duty factor was used (Figure 13)
and the conduction losses (P
C
) are approximated by P
C
= (V
CE
x I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 19. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the inte-
gral of the instantaneous power loss (I
CE
x V
CE
) during turn-
off. All tail losses are included in the calculation for E
OFF
; i.e.
the collector current equals zero (I
CE
= 0).
Test Circuit and Waveform
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
R
G
= 25
L = 100
µ
H
V
DD
= 480V
+
-
RHRP1560
t
FI
t
D(OFF)I
t
RI
t
D(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
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