Hamamatsu developed Multi Pin-Phase (MPP) mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level
detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide
dynamic range. Stability of the spectral response curve is also achieved for high precision measurements.
Either one-stage or two-stage thermoelectric cooler is built into the package (S7171-0909, S7172-0909). At room temperature operation, the
device can be cooled down to -10 °C by one-stage cooler and -30 °C by two-stage cooler, respectively. In addition since both the CCD chip and
the thermoelectric cooler are hermetically sealed, no dry air is required, thus allowing easy handling.

Features

l 512 × 512 pixel format

l Greater than 90 % quantum efficiency

at peak sensitivity wavelength

l Wide spectrum range

l Low readout noise

l Wide dynamic range

l MPP operation

l Non-cooled types: S7170-0909

One-stage TE-cooled types: S7171-0909

Applications

l Scientific measuring instrument

l Semiconductor inspection

l UV imaging

l Bio-photon observation

I M A G E S E N S O R

CCD area image sensor

512 × 512 pixels, Back-thinned FFT-CCD

S7170-0909, S7171-0909

I General ratings

Parameter

S7170-0909

S7171-0909

Pixel size

24 (H) × 24 (V) ľm

Number of active pixels

512 (H) × 512 (V)

Vertical clock phase

2 phase

Horizontal clock phase

2 phase

Output circuit

One-stage MOSFET source follower

Package

24 pin ceramic DIP (refer to dimensional outlines)

Built-in cooler

One-stage

Window

Sapphire glass *

*1: Window-less is available upon request.

I Selection guide

Type No.

Cooling

Number of total pixels

Number of active

pixels

Active area

[mm (H) × mm (V)]

S7170-0909

Non-cooled

532 ´ 520

512 ´ 512

12.288 ´ 12.288

S7171-0909

One-stage

TE-cooled

532 ´ 520

512 ´ 512

12.288 ´ 12.288

Note) Two-stage TE-cooled type (S7172-0909) is also available.

CCD area image sensor

S7170-0909, S7171-0909

I Absolute maximum ratings (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Operating temperature

Topr

-50

+30

°C

Storage temperature

Tstg

-50

+70

°C

OD voltage

-0.5

+25

RD voltage

-0.5

+18

ISV voltage

ISV

-0.5

+18

ISH voltage

ISH

-0.5

+18

IGV voltage

IG1V

, V

IG2V

-10

+15

IGH voltage

IG1H

, V

IG2H

-10

+15

SG voltage

-10

+15

OG voltage

-10

+15

RG voltage

-10

+15

TG voltage

-10

+15

Vertical clock voltage

P1V

, V

P2V

-10

+15

Horizontal clock voltage

P1H

, V

P2H

-10

+15

I Operating conditions (MPP mode, Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Output transistor drain voltage

Reset drain voltage

11.5

12.5

Output gate voltage

Substrate voltage

Test point (vertical input source)

ISV

Test point (horizontal input source)

ISH

Test point (vertical input gate)

IG1V

, V

IG2V

-8

Test point (horizontal input gate)

IG1H

, V

IG2H

-8

High

P1VH

, V

P2VH

Vertical shift register

clock voltage

Low

P1VL

, V

P2VL

-9

-8

-7

High

P1HH

, V

P2HH

Horizontal shift register

clock voltage

Low

P1HL

, V

P2HL

-9

-8

-7

High

SGH

Summing gate voltage

Low

SGL

-9

-8

-7

High

RGH

Reset gate voltage

Low

RGL

-9

-8

-7

High

TGH

Transfer gate voltage

Low

TGL

-9

-8

-7

I Electrical characteristics (Ta=25 °C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Signal output frequency

MHz

Vertical shift register capacitance

P1V

, C

P2V

6,400

Horizontal shift register capacitance

P1H

, C

P2H

120

Summing gate capacitance

Reset gate capacitance

Transfer gate capacitance

150

Charge transfer efficiency *

CTE

0.99995

0.99999

DC output level *

Vout

Output impedance *

Power consumption *

*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.

*3: The values depend on the load resistance. (Typical, V

=20 V, Load resistance=22 kW)

*4: Power consumption of the on-chip amplifier.

CCD area image sensor

S7170-0909, S7171-0909

*9: Spectral response with sapphire window is decreased by

the transmittance

I Spectral response (without window)

I Spectral transmittance characteristic of window material

KMPDB0058EA

QUANTUM EFFICIENCY (%)

WAVELENGTH (nm)

(Typ. Ta=25 °C)

200

400

600

800

1000

1200

100

FRONT-SIDED

FRONT-SIDED
(UV COAT)

BACK-THINNED

100

200

WAVELENGTH (nm)

TRANSMITTANCE (%)

300

400

500

600

700

800

900 1000

100

(Typ. Ta=25 °C)

KMPDB0102EA

G Window material

Type No.

Window material

S7170-0909

S7171-0909

S7172-0909

(two-stage TE-

cooled type)

Sapphire glass *

(option: window-less)

*10: Hermetic sealing

I Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Saturation output voltage

Vsat

Fw × Sv

Vertical

150,000

300,000

Full well

capacity

Horizontal

300,000

600,000

CCD node sensitivity

1.8

2.2

ľV/e

25 °C

4,000

12,000

Dark current *

(MPP mode)

0 °C

200

600

/pixel/s

Readout noise *

rms

Line binning

18,750

75,000

Dynamic range *

Area scanning

9,375

37,500

Photo response non-uniformity *

PRNU

ą3

ą10

Spectral response range

200 to 1100

*5: Dark current nearly doubles for every 5 to7 °C increase in temperature.

*6: Operating frequency is 150 kHz.

*7: Dynamic Range (DR) = Full well/Readout noise

*8: Measured at half of the full well capacity.

Photo Response Non-Uniformity (PRNU) [%] =

Signal

peak)

(peak

noise

pattern

Fixed

× 100

CCD area image sensor

S7170-0909, S7171-0909

INTEGRATION PERIOD
(Shutter must be open)

P1V

P2V, TG

P1H

P2H, SG

READOUT PERIOD (Shutter must be closed)

ENLARGED VIEW

4..519 520

512 + 8 (BEVEL)

Tpwv

Tovr

Tpwr

D18

D19

D20

D5..D12, S1..S512, D13..D17

P2V, TG

P1H

P2H, SG

Tpwh, Tpws

KMPDC0119EA

I Timing chart

Parameter

Symbol

Remark

Min.

Typ.

Max.

Unit

Pulse width

Tpwv

ľs

P1V, P2V, TG

Rise and fall time

Tprv, Tpfv

200

Pulse width

Tpwh

500

Rise and fall time

Tprh, pfh

P1H, P2H

Duty ratio

Pulse width

Tpws

500

Rise and fall time

Tprs, Tpfs

Duty ratio

Pulse width

Tpwr

100

Rise and fall time

Tprr, Tpfr

TG P1H

Overlap time

Tovr

ľs

*11: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.

Area scanning 1 (low dark current mode)

CCD area image sensor

S7170-0909, S7171-0909

KMPDC0120EA

Parameter

Symbol

Remark

Min.

Typ.

Max.

Unit

Pulse width

Tpwv

ľs

P1V, P2V, TG

Rise and fall time

Tprv, Tpfv

200

Pulse width

Tpwh

500

Rise and fall time

Tprh, Tpfh

P1H, P2H

Duty ratio

Pulse width

Tpws

500

Rise and fall time

Tprs, Tpfs

Duty ratio

Pulse width

Tpwr

100

Rise and fall time

Tprr, Tpfr

TG - P1H

Overlap time

Tovr

ľs

*12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.

INTEGRATION PERIOD
(Shutter must be open)

P1V

P2V, TG

P1H

P2H, SG

READOUT PERIOD (Shutter must be closed)

ENLARGED VIEW

4..519 520

512 + 8 (BEVEL)

Tpwv

Tovr

Tpwr

D18

D19

D20

D5..D12, S1..S512, D13..D17

P2V, TG

P1H

P2H, SG

Tpwh, Tpws

Area scanning 2 (large full well mode)

CCD area image sensor

S7170-0909, S7171-0909

I Pin connections

S7170-0909

S7171-0909

No.

Symbol

Function

Symbol

Function

Remark

(standard operation)

Reset drain

+12 V

Output transistor source

=10 k to 100 kW

Output transistor drain

+20 V

Output gate

+3 V

Summing gate

Same pulse as P2H

P2H

CCD horizontal register clock-2

P2H

CCD horizontal register clock-2

P1H

CCD horizontal register clock-1

P1H

CCD horizontal register clock-1

IG2H

Test point (horizontal input gate-2)

IG2H

Test point (horizontal input gate-2)

0 V

IG1H

Test point (horizontal input gate-1)

IG1H

Test point (horizontal input gate-1)

0 V

ISH

Test point (horizontal input source)

ISH

Test point (horizontal input source)

Connect to RD

TG *

Transfer gate

TG *

Transfer gate

Same pulse as P2V

P2V

CCD vertical register clock-2

P2V

CCD vertical register clock-2

P1V

CCD vertical register clock-1

P1V

CCD vertical register clock-1

Th1

Thermistor

Th2

Thermistor

P-

TE-cooler-

P+

TE-cooler+

Substrate (GND)

GND

ISV

Test point (vertical input source)

ISV

Test point (vertical input source)

Connect to RD

IG2V

Test point (vertical input gate-2)

IG2V

Test point (vertical input gate-2)

0 V

IG1V

Test point (vertical input gate-1)

IG1V

Test point (vertical input gate-1)

0 V

Reset gate

*13: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse

as P2V.

I Specifications of built-in TE-cooler (S7171-0909)

Parameter

Symbol

Condition

Typ.

Unit

Internal resistance

Rint

Ta=25 °C

2.1

Maximum current *

Imax Tc *

=Th *

=25 °C

2.0

Maximum voltage

Vmax Tc *

=Th *

=25 °C

4.2

Maximum heat absorption *

Qmax

4.5

Maximum temperature of heat radiating side

°C

*14: Maximum current Imax:

If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the

Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and

maintain stable operation, the supply current should be less than 60 % of this maximum current.

*15: Temperature of the cooling side of thermoelectric cooler.

*16: Temperature of the heat radiating side of thermoelectric cooler.

*17: Maximum heat absorption Qmax.

This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the

maximum current is supplied to the unit.

VOLTAGE vs. CURRENT

CCD TEMPERATURE vs. CURRENT

L
T

GE (V)

CCD TEMPERA

TURE

(
°
C)

-30

2.0

1.5

1.0

CURRENT (A)

0.5

-20

-10

(Typ. Ta=25 °C)

KMPDB0180EA

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Š2003 Hamamatsu Photonics K.K.

CCD area image sensor

S7170-0909, S7171-0909

I Precaution for use (Electrostatic countermeasures)

G Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with

an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

G Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

G Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to

discharge.

G Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.

I Specifications of built-in temperature sensor (S7171-0909)

A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation

between the thermistor resistance and absolute temperature is expressed by the following equation.

R1 = R2 × expB (1 / T1 - 1 / T2)

where R1 is the resistance at absolute temperature T1 (K)

R2 is the resistance at absolute temperature T2 (K)

B is so-called the B constant (K)

The characteristics of the thermistor used are as follows.

R (298K) = 10 kW

B (298K / 323K) = 3450 K

(Typ. Ta=25 °C)

10 k

220

240

260

TEMPERATURE (K)

RESIST

ANCE

280

300

100 k

1 M

Cat. No. KMPD1028E05

Feb. 2003 DN

KMPDB0111EA

I Element cooling/heating temperature incline rate

Element cooling/heating temperature incline rate should be set at less than 5 K/min.

Part Number S7170-0909