Features
l Thin package: 4.0 × 4.2 × 1.7 mm
l Focal distance: 3 mm
l Larger photocurrent than phototransistor output type
Applications
l Paper detection in copiers and printers
l Keyboard position sensing in electronic organs
l Object detection such as coins in vending machines
P H O T O R E F L E C T O R
Photoreflector
Thin package, photo IC diode output type photoreflector
P7816
P7816 is a photoreflector using a photo IC diode on the output. The photo IC diode consists of a photodiode integrated with a current amplifier,
and linearly amplifies and outputs the photocurrent generated in the photodiode. The two lead, current output allows operation just the same as
operating photodiodes with a reverse bias.
s
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Forward current
I
F
50
mA
Reverse voltage
V
IR
5
V
Input
Power dissipation
P
80
mW
Reverse voltage
V
OR
-0.5 to +16
V
Photocurrent
I
L
10
mA
Output
Power dissipation
P
150
mW
Operating temperature
Topr
-30 to +80
°C
Storage temperature
Tstg
-30 to +85
°C
Soldering
-
260 °C, 3 s, refer to Dimensional outline
-
s
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
=20 mA
-
1.23
1.45
V
Reverse current
I
R
V
IR
=5 V
-
-
10
µA
Input
Terminal capacitance
Ct
V
IR
=0 V, f=1 MHz
-
30
-
pF
Output
Dark current
I
D
V
OR
=5 V
-
10
100
nA
Photocurrent
I
L
V
OR
=5 V, I
F
=4 mA, d=3 mm
Reflecting surface:
aluminum coated glass
-
1
-
mA
Rise time
tr
10 to 90 %, V
OR
=5 V, R
L
=10 k, d=3 mm
-
1.3
-
ms
Fall time
tf
90 to 10 %, V
OR
=5 V, R
L
=10 k, d=3 mm
-
1.3
-
ms
Transfer
characteristic
Leak current
I
LEAK
V
OR
=5 V, I
F
=4 mA,
no reflecting object
-
-
1
µA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
Photoreflector
P7816
Cat. No. KPC1005E01
Apr. 2001 DN
100
-25
0
25
50
75
0
AMBIENT TEMPERATURE (°C)
FOR
W
ARD CURRENT (mA)
70
(Typ.)
60
50
40
30
20
10
PHOTO IC POWER DISSIPATION (mW)
AMBIENT TEMPERATURE (°C)
180
(Typ.)
160
140
120
100
80
60
40
20
0
-25
0
25
50
75
100
100
-25
0
25
50
75
0
AMBIENT TEMPERATURE (°C)
RELA
TIVE PHO
T
OCURRENT (%)
120
80
140
100
(Typ. I
F
=4 mA, V
OR
=5 V)
60
40
20
KLEDB0081EA
s LED forward current vs.
ambient temperature
KPICB0023EA
s Output side power dissipation
vs. ambient temperature
KPCB0019EA
s Photocurrent vs. ambient temperature
+
WHITE
-
BLACK
D
d
0
-4
-3
-2
-1
0
CARD SHIFT DISTANCE D (mm)
RELA
TIVE PHO
T
O
CURRENT (%)
1
2
3
4
20
40
60
(Typ. Ta=25 °C, I
F
=4 mA, V
OR
=5 V, d=3 mm)
80
100
d
D
0
-6
-4
-2
0
CARD SHIFT DISTANCE D (mm)
(Typ. Ta=25 °C, I
F
=4 mA, V
OR
=5 V, d=3 mm)
RELA
TIVE PHO
T
OCURRENT (%)
2
4
6
20
40
60
80
100
d
0
0
1
2
3
4
5
DISTANCE D (mm)
RELA
TIVE PHO
T
OCURRENT (%)
6
7
8
9
10
20
40
60
80
100
(Typ. Ta=25 °C, I
F
=4 mA, V
OR
=5 V, white paper with reflectivity of 90 % Min.)
KPICB0014EA
s Position detection
characteristic (1)
KPCB0018EA
s Position detection
characteristic (2)
KPCB0016EB
s Photocurrent vs. distance
1 M
0.1 k
1 k
10 k
100 k
0.1
LOAD RESISTANCE (
9)
RISE/F
ALL TIME
(ms)
100
(Typ. V
OR
=5 V, V
O
=2.5 V, d=3 mm)
10
1
tf
tr
KPCB0020EA
s Rise/fall time vs. load resistance
s Dimensional outline (unit: mm)
CATHODE (LED)
ANODE (LED)
ANODE (PHOTO IC DIODE)
CATHODE (PHOTO IC DIODE)
Shaded area indicates burr.
Tolerance unless otherwise noted: ±0.2
4.0
4.2
1.7
0.8 ± 0.3
3.5 MIN.
(4 ×) 0.6
(4 ×) 0.4
2.1
2.54
(SPECIFIED AT THE LEAD ROOT)
MARKING
(WHITE LINE)
4.2
5.6 ± 0.3
0 TO 13°
0.16
+0.2
-0.1
1.4
SOLDER THE LEADS AT A
POINT BELOW THIS POSITION
KPCA0007EA
PDF 
ZIP