G8909-01
Features
l 250 µm pitch, 40 ch parallel readout
l Low cross-talk
l Precise chip position tolerance: ±0.05 mm
Applications
l DWDM monitor with AWG
P H O T O D I O D E
InGaAs PIN photodiode array
Photodiode array for DWDM monitor
PRELIMINARY DATA
Apr. 2002
1
I General ratings
Parameter
Value
Unit
Active area
f0.08
mm
Pixel pitch
250
µm
Number of elements
40
ch
I Absolute maximum ratings
Parameter
Symbol
Remark
Value
Unit
Reverse voltage
V
R
Max
.
6
V
Allowable input power
P
in
Max.
10
mV
Operating temperature
Topr
-40 to +85
°C
Storage temperature
Tstg
*
-40 to +85
°C
* In N
environment or in vacuum
I Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
0.9 to 1.7
-
µm
l=1.31 µm
0.8
0.9
-
Photo sensitivity
S
l=1.55 µm
0.85
0.95
-
A/W
Photo response non-uniformity
PRNU
-
-
±5
%
Dark current
I
D
V
R
=5 V
-
0.02
0.2
nA
Shunt resistance
Rsh
V
R
=10 mV
-
8
-
GW
Terminal capacitance
Ct
V
R
=5 V, f=1 MHz
-
1.4
-
pF
Cross-talk
-
V
R
=0.1 V
-
-33
-
dB
InGaAs PIN photodiode array
G8909-01
2
I Spectral response
KIRDB0002EB
I Dark current vs. reverse voltage
KIRDB0266EA
I Terminal capacitance vs. reverse voltage
KIRDB0267EA
KIRDB0268EA
I Dark current vs. temperature
I Cross-talk characteristic
KIRDB0269EA
WAVELENGTH (µm)
PHOTO SENSITIVITY (A/W)
2.0
0.5
(Typ. Ta=25 °C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
REVERSE VOLTAGE (V)
DARK CURRENT
0.01
0.1
1
1 pA
10 pA
100 pA
100
(Typ. Ta=25 °C)
1 nA
10
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
0.01
0.1
1
100 fF
1 pF
100
(Typ. Ta=25 °C, f=1 MHz)
10 pF
10
TEMPERATURE (°C)
DARK CURRENT
20
30
50
10 pA
1 nA
80
(Typ. V
R
=5 V)
100 nA
100 pA
10 nA
70
40
60
POSITION X (µm)
RELATIVE SENSITIVITY (%)
-250
-200
-100
0.01
1
0
(Typ. Ta=25 °C,
=1.55 µm, SPOT= 20 µm, Pin=5 nW, V
R
=0.1 V)
100
0.1
10
-50
-150
250 µm
InGaAs PIN photodiode array
G8909-01
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
Cat. No. KIRD1053E02
Feb. 2003 DN
2.5
2.0
10.5
2.1
22.0
0.8
0.5
ANODE PAD
(PITCH: 400 µm, 40 ch,
150 × 150 µm BOND PADS)
a
(0.1)
CATHODE PAD
* The center of the active area
to the bottom of the substrate
DETAIL a
0.80
(0.15)
0.70 ± 0.05 *
0.4
I Dimensional outline (unit: mm)
KIRDA0158EA
3
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