GPTH1300
PHASE CONTROLLED SCR
High reliability operation
DC power supply
AC drives
VOLTAGE UP TO
800 V
AVERAGE CURRENT
3000 A
SURGE CURRENT
36 kA
BLOCKING CHARACTERISTICS
Characteristic
Conditions
V
RRM
Repetitive peak reverse voltage
800 V
V
RSM
Non-repetitive peak reverse voltage
900 V
V
DRM
Repetitive peak off-state voltage
800 V
I
DRM
Repetitive peak off-state current, max.
V
DRM
, single phase, half wave, Tj = Tjmax
100 mA
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
100 mA
ON-STATE CHARACTERISTICS
I
T(AV)
Average on-state current
Sine wave,180° conduction, Th = 55 °C
3000 A
I
T(RMS)
R.M.S. on-state current
Sine wave,180° conduction, Th = 55 °C
4712 A
I
TSM
Surge on-state current
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
36 kA
I²t
I² t for fusing coordination
6480 kA²s
V
T(TO)
Threshold voltage
T
j
= T
jmax
0.80 V
r
T
On-state slope resistance
T
j
= T
jmax
0.125 m
V
TM
Peak on-state voltage, max
On-state current I
T
= 4000 A , Tj = Tjmax
1.30 V
I
H
Holding current, max
T
j
= 25 °C
300 mA
I
L
Latching current, typ
T
j
= 25 °C
700 mA
TRIGGERING CHARACTERISTICS
V
GT
Gate trigger voltage
T
j
= 25 °C, V
D
= 5 V
3.5 V
I
GT
Gate trigger current
T
j
= 25 °C, V
D
= 5 V
300 mA
V
GD
Non-trigger voltage
V
D
= 67% V
RRM
, T
j
= T
jmax
0.25 V
P
GM
Peak gate power dissipation
Pulse width 100 µs
150 W
P
G(AV)
Average gate power dissipation
2 W
I
FGM
Peak gate current
10 A
V
FGM
Peak gate voltage (forward)
30 V
V
RGM
Peak gate voltage (reverse)
5 V
SWITCHING CHARACTERISTICS
di/dt
Critical rate of rise of on-state current
T
j
= T
jmax
200 A/µs
dV/dt
Critical rate of rise of off-state voltage
T
j
= T
jmax
1000 V/µs
t
q
Turn-off time, typ
T
j
= T
jmax
, I
T
= 1000 A, di/dt = -20 A/µs
µs
VR = 50 V, VD = 67% VDRM, dV/dt = 20 V/µs
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
Thermal resistance (junction to case)
Double side cooled
0.016 °C/W
R
th(c-h)
Thermal resistance (case to heatsink)
Double side cooled
0.001 °C/W
T
jmax
Max operating junction temperature
150 °C
T
stg
Storage temperature
-40 / 150 °C
F
Clamping force ± 5%
24 kN
Mass
500 g
Document GPTH1300T001
Value
Green Power Solutions srl
Via Greto di Cornigliano 6R - 16152 Genova , Italy
Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
PHASE CONTROLLED SCR
GPTH1300
Document GPTH1300T001
Maximum surge current
d.s. cooled
0
5
10
15
20
25
30
35
40
1
10
100
Number of cycle current pulses [n]
I
TSM
[A]
On-state voltage drop
0
1000
2000
3000
4000
5000
6000
7000
0
0.5
1
1.5
2
V
T
[V]
I
T
[A]
T
j
=T
jmax
Green Power
Semiconductors
Thermal impedance (j-c)
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.001
0.01
0.1
1
10
100
Time [s]
Z
TH(j-c)
[°C / W]
Current rating - sine wave
50
70
90
110
130
150
170
0
500 1000 1500 2000 2500 3000 3500
I
T
[A]
Heatsink temperature [°C]
180°
90°
120°
60°
30°
Power loss - sine wave
0
1000
2000
3000
4000
5000
6000
0
500
1000 1500 2000 2500 3000 3500
I
T
[A]
P
F
[W]
180°
120°
90°
60°
30°
I
n the interest of product improvement Green Power Solutions reserves the right to change any specification given in this data sheet
without notice.
On-state voltage drop
0
500
1000
1500
2000
2500
3000
3500
4000
0.5
1
1.5
2
V
T
[V]
I
T
[A]
T
j
=T
jmax
dimensions mm
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