ChipFind - Datasheet

Part Number EGP20x

Download:  PDF   ZIP
EGP20A THRU EGP20G
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage - 50 to 400 Volts Forward Current - 2.0 Amperes
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature
metallurgically bonded construction
High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AC molded plastic over solid glass
body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
EGP
EGP
EGP
EGP
EGP
EGP
SYMBOLS
20A
20B
20C
20D
20F
20G
UNITS
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
300
400
Volts
Maximum RMS voltage
V
RMS
35
70
105
140
210
280
Volts
Maximum DC blocking voltage
V
DC
50
100
150
200
300
400
Volts
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
I
(AV)
2.0
Amps
Peak forward surge current,
8.3 ms single half sine-wave superimposed
on rated load
I
FSM
75.0
Amps
Maximum instantaneous forward voltage at 2.0A
V
F
0.95
1.25
Volts
Maximum DC reverse current
T
A
=25°C
5.0
at rated DC blocking voltage
T
A
=125°C
I
R
100.0
µ
A
Maximum reverse recovery time
(NOTE 1
) t
rr
50.0
ns
Typical junction capacitance
(NOTE 2)
C
J
70.0
45.0
pF
Typical thermal resistance
(NOTE 3)
R
JA
40.0
R
JL
15.0
°C/W
Operating junction and storage temperature range
T
J
, T
STG
-65 to +150
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted
4/98
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
1.0
MIN.
(25.4)
0.230 (5.8)
0.300 (7.6)
1.0
MIN.
(25.4)
DO-204AC
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
P
A
TENTED*
®
0
25
50
75
100
125
150
175
0
1.0
2.0
3.0
1
10
100
0
15
30
45
60
75
90
0.1
1
10
100
1,000
0
20
40
60
80
100
120
140
0.01
0.1
1
10
100
0.1
1
10
100
0.4
0.6
0.8
1.2
1.4
1.6
1.8
1.0
0.01
0.1
1
10
50
0.2
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
RATINGS AND CHARACTERISTIC CURVES EGP20A THRU EGP20G
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
AMBIENT TEMPERATURE, °C
A
VERA
GE FOR
W
ARD RECTIFIED
CURRENT
, AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FOR
W
ARD SURGE CURRENT
,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS FOR
W
ARD CURRENT
,
AMPERES
INST
ANT
ANEOUS REVERSE LEAKA
GE CURRENT
,
MICR
O
AMPERES
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
JUNCTION CAP
A
CIT
ANCE, pF
REVERSE VOLTAGE, VOLTS
t, PULSE DURATION, sec.
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T
J
=150°C
T
J
=125°C
T
J
=75°C
T
J
=25°C
TJ=25°C
TJ=150°C
PULSE WIDTH=300
µ
s
1% DUTY CYCLE
T
J
=25°C
f=1.0 MHz
Vsig=50mVp-p
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
EGP20A - EGP20D
EGP20F & EGP20G
EGP20A - EGP20D
EGP20F & EGP20G
TRANSIENT THERMAL
IMPED
ANCE,
°
CW