FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DMOS Transistors (P-Channel)
G
S
D
.181 (4.6)
mi
n. .492
(
12.5)
.181 (
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 °C
ambient temperature unless otherwise specified
.098 (2.5)
max.
.022 (0.55)
4/98
BS250
Inverse Diode
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage
V
DGS
60
V
Gate-Source Voltage (pulsed)
V
GS
± 20
V
Drain Current (continuous)
I
D
250
mA
Power Dissipation at T
amb
= 25 °C
P
tot
0.83
1)
W
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
65 to +150
°C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Symbol
Value
Unit
Max. Forward Current (continuous)
at T
amb
= 25 °C
I
F
0.3
A
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.12 A, T
j
= 25 °C
V
F
0.85
V
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
On special request, this transistor is also manufactured
in the pin configuration TO-18.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BS250
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at I
D
= 100
µ
A, V
GS
= 0
V
(BR)DSS
60
70
V
Gate Threshold Voltage
at V
GS
= V
DS
, I
D
= 1 mA
V
GS(th)
1.0
2.0
3.0
V
Gate-Body Leakage Current
at V
GS
= 15 V, V
DS
= 0
I
GSS
20
nA
Drain Cutoff Current at V
DS
= 25 V, V
GS
= 0
I
DSS
0.5
µ
A
Drain-Source ON Resistance
at V
GS
= 10 V, I
D
= 0.2 A
R
DS(ON)
3.5
5.0
Thermal Resistance Junction to Ambient Air
R
thJA
150
1)
K/W
Forward Transconductance
at V
DS
= 10 V, I
D
= 0.2 A, f = 1 MHz
g
m
150
mS
Input Capacitance
at V
DS
= 10 V, V
GS
= 0, f = 1 MHz
C
iss
60
pF
Switching Times
at V
GS
= 10 V, V
DS
= 10 V, R
D
= 100
Turn-On Time
Turn-Off Time
t
on
t
off
5
25
ns
ns
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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