Dimensions in inches and (millimeters)

SOT-23

.016 (0.4)

056 (1.

)

.037(0.95) .037(0.95)

.
.

004 (0.

.122 (3.1)

.016 (0.4)

Top View

.102 (2.6)

.
007 (0.

175)

.
045 (1.

15)

.118 (3.0)

052 (1.

)

.
005 (0.

125)

.094 (2.4)

.
037 (0.

95)

Case: SOT-23 Plastic Package

Weight: approx. 0.008 g

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C

ambient temperature unless otherwise specified

Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.

FEATURES

Small Signal Transistors (NPN)

5/98

Symbol

Value

Unit

Collector-Base Voltage

BC846
BC847

BC848, BC849

CBO

80
50
30

V
V
V

Collector-Emitter Voltage

BC846
BC847

BC848, BC849

CES

80
50
30

V
V
V

Collector-Emitter Voltage

BC846
BC847

BC848, BC849

CEO

65
45
30

V
V
V

Emitter-Base Voltage

BC846, BC847
BC848, BC849

EBO

6
5

V
V

Collector Current

100

Peak Collector Current

200

Peak Base Current

200

Peak Emitter Current

200

Power Dissipation at T

= 50 °C

tot

310

Junction Temperature

150

°C

Storage Temperature Range

65 to +150

°C

Device on fiberglass substrate, see layout

BC846 THRU BC849

NPN Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.

Especially suited for automatic insertion in
thick- and thin-film circuits.

These transistors are subdivided into three
groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors
BC856...BC859 are recommended.

Marking code

Type

Marking

BC846A

BC847A

B
C

1A
1B

1E
1F

Type

Marking

BC848A

BC849B

2B
2C

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C

ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

h-Parameters at V

= 5 V, I

= 2 mA,

f = 1 kHz,
Small Signal Current Gain

Current Gain Group A

Input Impedance

Current Gain Group A

Output Admittance

Current Gain Group A

Reverse Voltage Transfer Ratio

Current Gain Group A

1.6
3.2
6

220
330
600
2.7
4.5
8.7
18
30
60

1.5 · 10

2 · 10

3 · 10

4.5
8.5
15
30
60
110

DC Current Gain
at V

= 5 V, I

= 10

Current Gain Group A

at V

= 5 V, I

= 2 mA

Current Gain Group A

110
200
420

90
150
270

180
290
520

220
450
800

Thermal Resistance Junction to Substrate
Backside

thSB

320

K/W

Thermal Resistance Junction to Ambient Air

thJA

450

K/W

Collector Saturation Voltage
at I

= 10 mA, I

= 0.5 mA

at I

= 100 mA, I

= 5 mA

CEsat

90
200

250
600

mV
mV

Base Saturation Voltage
at I

= 10 mA, I

= 0.5 mA

at I

= 100 mA, I

= 5 mA

BEsat

700
900

mV
mV

Base-Emitter Voltage
at V

= 5 V, I

= 2 mA

at V

= 5 V, I

= 10 mA

580

660

700
720

mV
mV

Collector-Emitter Cutoff Current
at V

= 80 V

BC846

at V

= 50 V

BC847

at V

= 30 V

BC848, BC849

at V

= 80 V, T

= 125 °C

BC846

at V

= 50 V, T

= 125 °C

BC847

at V

= 30 V, T

= 125 °C

BC848, BC849

CES

0.2
0.2
0.2

15
15
15
4
4
4

nA
nA
nA

Gain-Bandwidth Product
at V

= 5 V, I

= 10 mA, f = 100 MHz

300

MHz

Device on fiberglass substrate, see layout

BC846 THRU BC849

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C

ambient temperature unless otherwise specified

BC846 THRU BC849

Symbol

Min.

Typ.

Max.

Unit

Collector-Base Capacitance
at V

= 10 V, f = 1 MHz

CBO

3.5

Emitter-Base Capacitance
at V

= 0.5 V, f = 1 MHz

EBO

Noise Figure
at V

= 5 V, I

= 200

A, R

= 2 k

f = 1 kHz,

f = 200 Hz BC846, BC847, BC848

BC849

at V

= 5 V, I

= 200

A, R

= 2 k

f = 30 ...15 000 Hz

BC849

F
F

2
1.2

1.4

10
4

dB
dB

Layout for R

thJA

test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

Part Number BC846