FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
m
a
x
.
.00
4
(
0
.
1
)
.112 (
2
.85
)
.152 (
3
.85)
.067 (1.70)
max
.
.053 (
1
.35)
min. .010 (0.25)
Cathode Mark
ma
x
.
.006
(
0
.1
5)
Top View
.140 (
3
.55)
.100 (
2
.55
)
.055 (1.40)
4/98
BAT42W, BAT43W
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
30
V
Forward Continuous Current at T
amb
= 25 °C
I
F
200
mA
Repetitive Peak Forward Current
at t
p
< 1 s,
< 0.5, T
amb
= 25 °C
I
FRM
500
mA
Surge Forward Current at t
p
< 10 ms, T
amb
= 25 °C
I
FSM
4
2)
A
Power Dissipation
1)
at T
amb
= 65 °C
P
tot
200
2)
mW
Junction Temperature
T
j
125
°C
Ambient Operating Temperature Range
T
amb
55 to +125
°C
Storage Temperature Range
T
S
55 to +150
°C
2)
Valid provided that electrodes are kept at ambient temperature
For general purpose applications
These diodes feature very low turn-
on voltage and fast switching. These
devices are protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges.
These diodes are also available in the DO-35
case with the type designations BAT42 to BAT43
and in the MiniMELF case with type designations
LL42 to LL43.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BAT42W, BAT43W
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
tested with 100
µ
A Pulses
V
(BR)R
30
V
Forward Voltage
Pulse Test t
p
< 300
µ
s,
< 2%
at I
F
= 200 mA
at I
F
= 10 mA
BAT42W
at I
F
= 50 mA
BAT42W
at I
F
= 2 mA
BAT43W
at I
F
= 15mA
BAT43W
V
F
V
F
V
F
V
F
V
F
0.26
1
0.4
0.65
0.33
0.45
V
V
V
V
V
Leakage Current
Pulse Test t
p
< 300
µ
s,
< 2%
at V
R
= 25 V
at V
R
= 25 V, T
j
= 100 °C
I
R
I
R
0.5
100
µ
A
µ
A
Capacitance
at V
R
= 1 V, f = 1 MHz
C
tot
7
pF
Reverse Recovery Time
from I
F
= 10 mA through I
R
= 10 mA to I
R
= 1 mA,
R
L
= 100
t
rr
5
ns
Detection Efficiency
at R
L
= 15 K
, C
L
= 300 pF,
f = 45 MHz, V
RF
= 2 V
v
80
%
Thermal Resistance Junction to Ambient Air
R
thJA
0.3
2)
K/mW
2)
Valid provided that electrodes are kept at ambient temperature
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