2N3906
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
¨ PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
¨ As complementary type, the NPN transistor
2N3904 is recommended.
¨ On special request, this transistor is also
manufactured in the pin configuration
TO-18.
¨ This transistor is also available in the SOT-23 case with
the type designation MMBT3906.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
ÐV
CBO
40
Volts
Collector-Emitter Voltage
ÐV
CEO
40
Volts
Emitter-Base Voltage
ÐV
EBO
5.0
Volts
Collector Current
ÐI
C
200
mA
Power Dissipation at T
A
= 25¡C
P
tot
625
mW
at T
C
= 25¡C
1.5
Watts
Thermal Resistance Junction to Ambient Air
R
qJA
250
(1)
¡C/W
Junction Temperature
T
j
150
¡C
Storage Temperature Range
T
S
Ð 65 to +150
¡C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
Æ 0.022 (0.55)
E
C
B
TO-92
1/5/99
Dimensions in inches and (millimeters)
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
2N3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at ÐI
C
= 10
mA, I
E
= 0
ÐV
(BR)CBO
40
Ð
Volts
Collector-Emitter Breakdown Voltage
at ÐI
C
= 1 mA, I
B
= 0
ÐV
(BR)CEO
40
Ð
Volts
Emitter-Base Breakdown Voltage
at ÐI
E
= 10
mA, I
C
= 0
ÐV
(BR)EBO
5
Ð
Volts
Collector Saturation Voltage
at ÐI
C
= 10 mA, ÐI
B
= 1 mA
ÐV
CEsat
Ð
0.25
Volts
at ÐI
C
= 50 mA, ÐI
B
= 5 mA
ÐV
CEsat
Ð
0.4
Volts
Base Saturation Voltage
at ÐI
C
= 10 mA, ÐI
B
= 1 mA
ÐV
BEsat
Ð
0.85
Volts
at ÐI
C
= 50 mA, ÐI
B
= 5 mA
ÐV
BEsat
Ð
0.95
Volts
Collector-Emitter Cutoff Current
at ÐV
EB
= 3 V, ÐV
CE
= 30 V
ÐI
CEV
Ð
50
nA
Emitter-Base Cutoff Current
at ÐV
EB
= 3 V, ÐV
CE
= 30 V
ÐI
EBV
Ð
50
nA
DC Current Gain
at ÐV
CE
= 1 V, ÐI
C
= 0.1 mA
h
FE
60
Ð
Ð
at ÐV
CE
= 1 V, ÐI
C
= 1 mA
h
FE
80
Ð
Ð
at ÐV
CE
= 1 V, ÐI
C
= 10 mA
h
FE
100
300
Ð
at ÐV
CE
= 1 V, ÐI
C
= 50 mA
h
FE
60
Ð
Ð
at ÐV
CE
= 1 V, ÐI
C
= 100 mA
h
FE
30
Ð
Ð
Input Impedance
at ÐV
CE
= 10 V, ÐI
C
= 1 mA, f = 1 kHz
h
ie
1
10
k
W
Voltage Feedback Ratio
at ÐV
CE
= 10 V, ÐI
C
= 1 mA, f = 1 kHz
h
re
0.5 á 10
Ð4
8 á 10
Ð4
Ð
Gain-Bandwidth Product
at ÐV
CE
= 20 V, ÐI
C
= 10 mA, f = 100 MHz
f
T
250
Ð
MHz
Collector-Base Capacitance
at ÐV
CB
= 5 V, f = 100 kHz
C
CBO
Ð
4.5
pF
Emitter-Base Capacitance
at ÐV
EB
= 0.5 V, f = 100 kHz
C
EBO
Ð
10
pF
2N3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at ÐV
CE
= 10 V, ÐIC = 1 mA, f = 1 kHz
h
fe
100
400
Ð
Output Admittance
at ÐV
CE
= 1 V, ÐI
C
= 1 mA, f = 1 kHz
h
oe
1
40
mS
Noise Figure
at ÐV
CE
= 5 V, ÐI
C
= 100
mA, R
G
= 1 k
W,
f = 10 É 15000 Hz
NF
Ð
4
dB
Delay Time (see Fig. 1)
at ÐI
B1
= 1 mA, ÐI
C
= 10 mA
t
d
Ð
35
ns
Rise Time (see Fig. 1)
at ÐI
B1
= 1 mA, ÐI
C
= 10 mA
t
r
Ð
35
ns
Storage Time (see Fig. 2)
at I
B1
= ÐI
B2
= 1 mA, ÐI
C
= 10 mA
t
s
Ð
225
ns
Fall Time (see Fig. 2)
at I
B1
= ÐI
B2
= 1 mA, ÐI
C
= 10 mA
t
f
Ð
75
ns
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
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