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Part Number ESAD39M

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1. Gate
2. Drain
3. Source
20 Min
15.5
5.5
9.3
5.45
5.45
5.5
3.2
21.5
1.6
3.5
1.1
2.1
2.3
0.6
±
0.2
±
0.2
±
0.3
±
0.3
±
0.3
±
0.3
±
0.2
±
0.2
±
0.2
±
0.3
±
0.3
+0.2
+0.3
+0.2
--0.1
±
0.2
ø3.2
ESAD39M(C,N,D)
(10A)
(400V to 600V / 10A)
FAST RECOVERY DIODE
Outline drawings, mm
Features
Insulated package by fully molding
Super high speed switching
Low V
F
in turn on
High reliability
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
V
iso
I
O
I
FSM
T
j
T
stg
Conditions
50
-40 to +150
-40 to +150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
FM
I
RRM
t
rr
R
th(j-c)
Conditions
I
FM
=4A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.2A, I
rec
=0.05A
Junction to case
Max.
2.5
100
50
2.5
Unit
V
µA
ns
°C/W
Terminals-to-case, AC. 1min.
Square wave, duty=1/2, Tc=85°C
Sine wave 10ms
Rating
-04 -06
400 600
400 600
10*
Connection diagram
*
Average forward current of centertap full wave connection
ESAD39M- C
ESAD39M- N
ESAD39M- D
1
1
1
2
2
2
3
3
3
JEDEC
EIAJ
1500
ESAD39M(C,N,D)(10A)
(400V to 600V / 10A )
Characteristics
Forward characteristics
V
F
[V]
Reverse characteristics
V
R
[V]
I
F
[A]
I
R
[µA]
Surge capability
I
FSM
[A]
Forward power dissipation
I
o
[A]
W
F
[W]
0 200 400 600
100
10
1
0.1
Junction capacitance characteristics
C
j
[pF]
V
R
[V]
Output current-case temperature
T
c
[°C]
I
o
[A]
3 5 10 30 50 100 300
1 3 5 10
0 2 4 6
140
120
100
80
60
100
50
30
10
5
30
10
5
3
1
0.5
0.3
0.1
20
15
10
5
0
0 2 4 6 8 10
0 2 4 6 8 10
100
50
30
10
5
3
1
[time] (at 50Hz)
Transient thermal impedance
[°C/W]
t [sec.]
ESAD39M(C,N,D)(10A)
(400V to 600V / 10A )
10
1
10
0
10
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2