1
TO-220AB
Item
Symbol
Ratings
Unit Remarks
Drain-source voltage
V
DS
230
V
DSX
230
Continuous Drain Current
I
D
40
Pulsed Drain Current
I
D(puls]
±160
Gate-Source Voltage
V
GS
±30
Maximum Avalanche current
I
AR
40
Non-Repetitive
E
AS
633.1
Maximum Avalanche Energy
Repetitive
E
AR
27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dV
DS
/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
P
D
270
2.02
Operating and Storage
T
ch
+150
Temperature range
T
stg
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3870-01
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
Zero Gate Voltage Drain Current I
DSS
V
DS
=230V V
GS
=0V
V
DS
=184V V
GS
=0V
V
GS
=±30V
I
D
=20A V
GS
=10V
I
D
=20A V
DS
=25V
V
CC
=180V I
D
=20A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
µA
nA
m
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
0.463
62
°C/W
°C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250µA V
GS
=0V
I
D
= 250µA V
DS
=V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MH
V
CC
=115V
I
D
=40A
V
GS
=10V
I
F
=40A V
GS
=0V T
ch
=25°C
I
F
=40A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
230
3.0
5.0
25
250
100
58
76
12
24
1880
2820
230
345
12
18
28
42
8.4
12.6
56
84
6
9
42.0
63.0
18.0
27.0
12.0
18.0
1.10
1.50
230
2.5
-55 to +150
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
V
GS
=-30V
Note *1
Note *2
Note *3
V
DS
230V
Note *4
Tc=25°C
Ta=25°C
=
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,I
AS
=16A,L=4.09mH,
V
CC
=48V,R
G
=50
EAS limited by maximum channel temperature
and avalanch current.
See to the `Avalanche Energy' graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the `Transient Theemal impedance'
graph
Note *4:I
F
-I
D
, -di/dt=50A/µs,V
CC
BV
DSS
,Tch 150°C
=
<
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
=
<
=
<
2
Characteristics
2SK3870-01
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
100
200
300
400
Allowable Power Dissipation
PD=f(Tc)
PD
[
W
]
Tc [
°
C]
0
4
8
12
16
20
24
0
10
20
30
40
50
60
70
80
90
100
7V
20V
10V
8V
6.5V
VGS=5.5V
ID
[
A
]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID
[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
0.1
1
10
100
0.1
1
10
100
g
f
s [S
]
ID [A]
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
0
10
20
30
40
50
60
70
80
0.00
0.05
0.10
0.15
0.20
0.25
0.30
RD
S
(
o
n
)
[
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
10V
20V
8V
7V
6.5V
VGS=6V
-50
-25
0
25
50
75
100
125
150
0.00
0.05
0.10
0.15
0.20
0.25
RD
S
(
o
n
)
[
]
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=20A,VGS=10V
3
2SK3870-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
VGS
(
th)
[V]
Tch [
°
C]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=40A,Tch=25
°
C
VGS
[V]
184V
115V
Vcc= 46V
10
-1
10
0
10
1
10
2
10
3
1p
10p
100p
1n
10n
C [
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=180V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [n
s]
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
I
AS
=16A
I
AS
=24A
I
AS
=40A
E
AV [m
J
]
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A
4
2SK3870-01
FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100ms
10ms
1ms
100
µ
s
10
µ
s
Safe operating area
ID=f(VDS):Single Pulse,Tc=25
°
C
t=
1
µ
s
D.C.
ID
[
A
]
VDS [V]
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=48V
Av
a
l
anc
he C
u
rr
e
n
t I
AV
[A]
t
AV
[sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Z
t
h(
c
h
-c
) [
°
C/
W
]
t [sec]
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