1
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
200
V
DSX *5
170
Continuous drain current
I
D
±30
Pulsed drain current
I
D(puls]
±120
Gate-source voltage
V
GS
±30
Non-repetitive Avalanche current
I
AS *2
30
Maximum Avalanche Energy
E
AS *1
387
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Ta=25°C
1.67
Tc=25°C
135
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3596-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=200V V
GS
=0V
V
DS
=160V V
GS
=0V
V
GS
=±30V
I
D
=15A V
GS
=10V
I
D
=15A V
DS
=25V
V
CC
=48V I
D
=15A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
0.926
75.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250µA V
GS
=0V
I
D
= 250µA V
DS
=V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=100V
I
D
=30A
V
GS
=10V
L=100
µ
H T
ch
=25°C
I
F
=30A V
GS
=0V T
ch
=25°C
I
F
=30A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
200
3.0
5.0
25
250
10
100
50
66
12.5
25
1960
2940
260
390
18
27
20
30
17
26
53
80
19
29
51
76.5
15
22.5
16
24
30
1.10
1.65
0.19
1.4
-55 to +150
Outline Drawings
(mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 I
F
-I
D
, -di/dt=50A/µs, Vcc BV
DSS
, Tch 150°C
=
<
=
<
=
<
*1 L=689
µ
H, Vcc=48V *2 Tch 150°C
=
<
*4 V
DS
200V
<=
www.fujielectric.co.jp/denshi/scd
*5 V
GS
=-30V
P4
2
Characteristics
2SK3596-01L,S,SJ
FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0
25
50
75
100
125
150
0
100
200
300
400
500
EAV [mJ]
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A
0
2
4
6
8
10
12
0
20
40
60
80
100
120
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0
20
40
60
80
100
120
0.00
0.05
0.10
0.15
0.20
7.0V
6.5V
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
200
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
°
C]
3
2SK3596-01L,S,SJ
FUJI POWER MOSFET
VGS=f(Qg):ID=30A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
200
RDS(on) [ m
]
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
VGS(th) [V]
Tch [
°
C]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 100V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
4
2SK3596-01L,S,SJ
FUJI POWER MOSFET
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=48V
A
valanche current I
AV
[A]
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
t
AV
[sec]
GATE
DRAIN
SOURCE
See Note: 1.
Trademark
Lot No.
DIMENSIONS ARE IN MILLIMETERS.
Type name
FUJI POWER MOS FET
CONNECTION
Notes
1. ( ) : Reference dimensions.
Note: 1. Guaranteed mark of
avalanche ruggedness.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
Pre-Solder
Fig. 1.
Fig. 1.
OUT VIEW
Solder Plating
4
1
2
4
3
GATE
DRAIN
SOURCE
See Note: 1.
Trademark
Lot No.
Type name
FUJI POWER MOS FET
CONNECTION
Notes
1. ( ) : Reference dimensions.
Note: 1. Guaranteed mark of
avalanche ruggedness.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
OUT VIEW
Fig. 1.
Fig. 1.
Solder Plating
Pre-Solder
DIMENSIONS ARE IN MILLIMETERS.
2
4
1
3
PRE-SOLDER
See Note: 1.
Trademark
Lot No.
Type name
Note: 1. Guaranteed mark of avalanche ruggedness.
CONNECTION
GATE
DRAIN
SOURCE
DIMENSIONS ARE IN MILLIMETERS.
FUJI POWER MOS FET
1
2
3
1
2
3
Outline Drawings (mm)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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