2SK2518-01MR
N-channel MOS-FET
FAP-IIA Series
200V
0,13
20A
50W
> Features
> Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Avalanche Proof
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V
DS
200
V
Drain-Gate-Voltage(R
GS
=20K
)
V
DGR
200
V
Continous Drain Current
I
D
20
A
Pulsed Drain Current
I
D(puls)
80
A
Gate-Source-Voltage
V
GS
±30
V
Max. Power Dissipation
P
D
50
W
Operating and Storage Temperature Range
T
ch
150
°C
T
stg
-55 ~ +150
°C
-
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
V
(BR)DSS
I
D
=1mA
V
GS
=0V
200
V
Gate Threshhold Voltage
V
GS(th)
I
D
=1mA
V
DS=
V
GS
2,5
3,0
3,5
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=200V
T
ch
=25°C
10
500
µA
V
GS
=0V
T
ch
=125°C
0,2
1,0
mA
Gate Source Leakage Current
I
GSS
V
GS
=±30V
V
DS
=0V
10
100
nA
Drain Source On-State Resistance
R
DS(on)
I
D
=10A
V
GS
=10V
0,1
0,13
Forward Transconductance
g
fs
I
D
=10A
V
DS
=25V
7,0
15,0
S
Input Capacitance
C
iss
V
DS
=25V
1800
2700
pF
Output Capacitance
C
oss
V
GS
=0V
320
480
pF
Reverse Transfer Capacitance
C
rss
f=1MHz
80
120
pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
t
d(on)
V
CC
=150V
15
25
ns
t
r
I
D
=20A
60
90
ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
t
d(off)
V
GS
=10V
65
100
ns
t
f
R
GS
=10
60
90
ns
Avalanche Capability
I
AV
L=100µH T
ch
=25°C
20,0
A
Diode Forward On-Voltage
V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
1,06
1,59
V
Reverse Recovery Time
t
rr
I
F
=I
DR
V
GS
=0V
145
ns
Reverse Recovery Charge
Q
rr
-dI
F
/dt=100A/µs T
ch
=25°C
900
µC
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R
th(ch-a)
channel to air
62,5
°C/W
R
th(ch-c)
channel to case
2,5
°C/W
N-channel MOS-FET
2SK2518-01MR
200V
0,13
20A 50W
FAP-IIA Series
> Characteristics
Typical Output Characteristics Drain-Source On-State Resistance Typical Transfer Characteristics
I
D
=f(V
DS
); 80µs pulse test; T
C
=25°C
R
DS(on)
= f(T
ch
); I
D
=10A; V
GS
=10V
I
D
=f(V
GS
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
I
D
[A]
1
R
DS(ON)
[
]
2
I
D
[A]
3
V
DS
[V]
T
ch
[°C]
V
GS
[V]
Typical Drain-Source On-State-Resistance Typical Transconductance
Gate Threshold Voltage
R
DS(on)
=f(I
D
); T
C
=25°C
g
fs
=f(I
D
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
DS(ON)
[
]
4
g
fs
[S]
5
V
GS(th)
[V]
6
I
D
[A]
I
D
[A]
T
ch
[°C]
Typical Capacitances Typical Gate Charge Characteristics Forward Characteristics of Reverse Diode
C=f(V
DS
); V
GS
=0V; f=1MHz
V
GS
=f(Qg); I
D
=20A
I
F
=f(V
SD
); 80µs pulse test
C [F]
7
V
DS
[V]
8
V
GS
[V]
I
F
[A]
9
V
DS
[V]
Qg [nC]
V
SD
[V]
Power Dissipation Safe Operation Area
P
D
=f(Tc) I
D
=f(V
DS
): D=0,01, Tc=25°C
Z
th(ch-c)
[K/W]
Transient Thermal impedance
10
12
Z
thch-c
=f(t) parameter:D=t/T
P
D
[W]
I
D
[A]
T
ch
[°C]
V
DS
[V]
t [s]
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
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