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Part Number SSS4N80AS

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Advanced Power MOSFET
FEATURES
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
µ
A (Max.) @ V
DS
= 800V
Low R
DS(ON)
: 2.450
(Typ.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
C
)
Continuous Drain Current (T
C
=100
C
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
C
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
C
A
C
V
DSS
V
O
1
O
2
O
3
O
1
O
1
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
C
/W
Characteristic
Max.
Units
Symbol
Typ.
SSS4N80AS
BV
DSS
= 800 V
R
DS(on)
= 3.0
I
D
= 2.8 A
800
2.8
1.8
18
314
2.8
4
2.0
40
0.32
- 55 to +150
300
3.13
62.5
--
--
30
+
_
©1999 Fairchild Semiconductor Corporation
Rev. B
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
C
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain("Miller") Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/
T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
C
V
nA
µ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
µ
A
I
D
=250
µ
A See Fig 7
V
DS
=5V,I
D
=250
µ
A
V
GS
=30V
V
GS
=-30V
V
DS
=800V
V
DS
=640V,T
C
=125
C
V
GS
=10V,I
D
=0.85A
*
V
DS
=50V,I
D
=0.85A
V
DD
=400V,I
D
=2A,
R
G
=16
See Fig 13
V
DS
=640V,V
GS
=10V,
I
D
=2A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
O
4
O
5
O
4
O
4
O
4
O
5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
µ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
C
,I
S
=2.
8
A,V
GS
=0V
T
J
=25
C
,I
F
=4.5A
di
F
/dt=100A/
µ
s
O
4
O
4
O
1
SSS4N80AS
800
--
2.0
--
--
--
--
--
0.96
--
--
--
--
--
90
35
19
32
67
32
40
7.3
18.1
--
--
3.5
100
-100
25
250
3.0
--
1140
105
42
50
75
145
75
52
--
--
2.75
880
--
--
--
430
4.06
2.8
18
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=75mH, I
AS
=2.8A, V
DD
=50V, R
G
=27
, Starting T
J
=25
C
I
SD
4.5A, di/dt 120A/
µ
s, V
DD
BV
DSS
, Starting T
J
=25
C
Pulse Test : Pulse Width = 250
µ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
SSS4N80AS
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
@ Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 50 V
3. 250
µ
s Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
10
-1
10
0
10
1
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
µ
s Pulse Test
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
0
4
8
12
16
20
0
4
8
12
16
20
@ Note : T
J
= 25
o
C
V
GS
= 20 V
V
GS
= 10 V
R
DS(on)
, [
]
Drain-Source On-Resistance
I
D
, Drain Current [A]
10
0
10
1
0
300
600
900
1200
1500
C
iss
= C
gs
+ C
gd
( C
ds
= shorted )
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
0
5
10
V
DS
= 640 V
V
DS
= 400 V
V
DS
= 160 V
@ Notes : I
D
= 4.5 A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Vary t
p
to obtain
required peak I
D
10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V
DS
)
10V
V
out
V
in
R
L
DUT
R
G
3mA
V
GS
Current Sampling (I
G
)
Resistor
Current Sampling (I
D
)
Resistor
DUT
V
DS
300nF
50K¥Ø
200nF
12V
Same Type
as DUT
* Current Regulator *
R
1
R
2
SSS4N80AS
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Vary t
p
to obtain
required peak I
D
10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V
DS
)
10V
V
out
V
in
R
L
DUT
R
G
3mA
V
GS
Current Sampling (I
G
)
Resistor
Current Sampling (I
D
)
Resistor
DUT
V
DS
300nF
50K¥Ø
200nF
12V
Same Type
as DUT
* Current Regulator *
R
1
R
2
SSS4N80AS