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S
i
942
4
DY
Si9424DY Rev.A
Si9424DY
Single P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
·
DC/DC converter
·
Load switch
·
Battery Protection
January 2001
Features
·
-8.0 A, -20 V. R
DS(on)
= 0.024
@ V
GS
= -4.5 V
R
DS(on)
= 0.032
@ V
GS
= -2.5 V.
·
Low gate charge (23nC typical).
·
Fast switching speed.
·
High performance trench technology for extremely
low R
DS(ON)
.
·
High power and current handling capability.
©
2001 Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage -20 V
V
GSS
Gate-Source Voltage
±10
V
I
D
Drain Current - Continuous
(Note 1a)
-8.0 A
- Pulsed -50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5 W
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°
C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
9424 Si9424DY 13'' 12mm 2500 units
S
D
S
S
SO-8
D
D
D
G
5
6
8
3
1
7
4
2
S
i9
424
DY
Si9424DY Rev.A
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250
µ
A
-20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
µ
A, Referenced to 25
°
C
-24
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= -16 V, V
GS
= 0 V -1
µ
A
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 10 V, V
DS
= 0 V 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -10 V, V
DS
= 0 V -100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250
µ
A -0.4 -0.8 -1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
µ
A, Referenced to 25
°
C
5
mV/
°
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -4.5 V, I
D
= -8 A
V
GS
= -4.5 V, I
D
= -8 A ,T
J
=125
°
C
V
GS
= -2.5 V, I
D
= -7 A
0.019
0.026
0.027
0.024
0.039
0.032
I
D(on)
On-State Drain Current V
GS
= -4.5 V, V
DS
= -5.0 V -50 A
g
FS
Forward Transconductance V
DS
= -5 V, I
D
= -8 A 28 S
Dynamic Characteristics
C
iss
Input Capacitance 2260 pF
C
oss
Output Capacitance 500 pF
C
rss
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
205 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time 8 16 ns
t
r
Turn-On Rise Time 15 27 ns
t
d(off)
Turn-Off Delay Time 98 135 ns
t
f
Turn-Off Fall Time
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
35 55 ns
Q
g
Total Gate Charge 23 33 nC
Q
gs
Gate-Source Charge 5.5 nC
Q
gd
Gate-Drain Charge
V
DS
= -10 V, I
D
= -8 A,
V
GS
= -5 V,
4
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -2.1 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-0.75 -1.2 V
Notes:
1: R
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
JC
is guaranteed by design while R
JA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width
300
µ
s, Duty Cycle
2.0%
a) 50
°
C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 105
°
C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 125
°
C/W when
mounted on a 0.003 in
2
pad of 2 oz. copper.
S
i9
42
4
DY
Si9424DY Rev.A
Typical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0.5
1
1.5
2
2.5
0
10
20
30
40
50
-I
D
, DRAIN CURRENT (A)
R
D
S(O
N
)
, NO
R
MAL
IZE
D
D
R
A
I
N
-SOU
R
C
E
ON
-R
E
S
I
S
T
A
N
C
E
V
GS
= -2.5V
-3.0V
-3.5V
-4.5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
-V
SD
, BODY DIODE VOLTAGE (V)
-I
S
,
RE
V
E
R
S
E
DRAI
N
C
URRE
NT (
A
)
T
J
=125
o
C
25
o
C
-55
o
C
V
GS
= 0
0
0.02
0.04
0.06
0.08
0.1
1 1.5 2 2.5 3 3.5 4 4.5 5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, ON
R
ESI
ST
A
N
C
E
(
O
H
M
)
I
D
= -4A
T
J
= 125
o
C
25
o
C
0
4
8
12
16
20
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
D
RAI
N
CU
RR
E
N
T
(
A
)
V
DS
= -5V
T
J
= -55
o
C
25
o
C
125
o
C
0
10
20
30
40
50
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
,
D
RAI
N
C
URR
E
N
T (
A
)
V
GS
= -4.5V
-3.5V
-2.5V
-2.0V
-1.5V
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
N
O
RM
AL
I
Z
E
D
D
RAI
N-
S
O
URC
E
O
N
-RE
S
I
S
T
ANC
E
I
D
= -8A
V
GS
= -10V
S
i9
424
DY
Si9424DY Rev.A
Typical Characteristics
(continued)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R
JA
=125
o
C/W
T
A
=25
o
C
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
RANS
IE
NT
T
H
E
R
M
A
L
R
E
S
I
S
T
AN
CE
r
(
t
)
,
N
O
RM
AL
I
Z
E
D
EF
F
E
CT
I
V
E
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 125°C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
DC
1s
10s
100ms
10ms
100
µ
s
0
1
2
3
4
5
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
-V
GS
,
GA
T
E-SO
U
R
C
E VO
L
T
A
GE
(V)
I
D
= -8.0A
V
DS
= -5V
-10V
-15V
0
500
1000
1500
2000
2500
3000
3500
0 4 8 12 16 20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
AA
CIT
ANCE
(
pF)
f= 1 MHz
V
GS
= 0V
C
iss
C
oss
C
rss
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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