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©2002 Fairchild Semiconductor Corporation
SGP23N60UFD Rev. A1
IGBT
S
G
P23N60UFD
SGP23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
· High speed switching
· Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 12A
· High input impedance
· CO-PAK, IGBT with FRD : t
rr
= 42ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGP23N60UFD
Units
V
CES
Collector-Emitter Voltage
600
V
V
GES
Gate-Emitter Voltage
±
20
V
I
C
Collector Current
@ T
C
= 25
°
C
23
A
Collector Current
@ T
C
= 100
°
C
12
A
I
CM (1)
Pulsed Collector Current
92
A
I
F
Diode Continuous Forward Current
@ T
C
= 100
°
C
12
A
I
FM
Diode Maximum Forward Current
92
A
P
D
Maximum Power Dissipation
@ T
C
= 25
°
C
100
W
Maximum Power Dissipation
@ T
C
= 100
°
C
40
W
T
J
Operating Junction Temperature
-55 to +150
°
C
T
stg
Storage Temperature Range
-55 to +150
°
C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8" from Case for 5 Seconds
300
°
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Thermal Resistance, Junction-to-Case
--
1.2
°
C
/
W
R
JC
(DIODE)
Thermal Resistance, Junction-to-Case
--
2.5
°
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C
/
W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
TO-220
G C E
G
C
E
G
C
E
SGP23N60UFD Rev. A1
S
G
P23N60UFD
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
°
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250uA
600
--
--
V
B
VCES
/
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
250
uA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
± 100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 12mA, V
CE
= V
GE
3.5
4.5
6.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 12A
,
V
GE
= 15V
--
2.1
2.6
V
I
C
= 23A
,
V
GE
= 15V
--
2.6
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
720
--
pF
C
oes
Output Capacitance
--
100
--
pF
C
res
Reverse Transfer Capacitance
--
25
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 12A,
R
G
= 23
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
17
--
ns
t
r
Rise Time
--
27
--
ns
t
d(off)
Turn-Off Delay Time
--
60
130
ns
t
f
Fall Time
--
70
150
ns
E
on
Turn-On Switching Loss
--
115
--
uJ
E
off
Turn-Off Switching Loss
--
135
--
uJ
E
ts
Total
Switching
Loss
--
250
400
uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 12A,
R
G
= 23
, V
GE
= 15V
,
Inductive Load, T
C
= 125
°
C
--
23
--
ns
t
r
Rise Time
--
32
--
ns
t
d(off)
Turn-Off Delay Time
--
100
200
ns
t
f
Fall Time
--
220
250
ns
E
on
Turn
-
On Switching Loss
--
205
--
uJ
E
off
Turn
-
Off Switching Loss
--
320
--
uJ
E
ts
Total
Switching
Loss
--
525
800
uJ
Q
g
Total Gate Charge
V
CE
= 300 V, I
C
= 12A,
V
GE
= 15V
--
49
80
nC
Q
ge
Gate-Emitter Charge
--
11
17
nC
Q
gc
Gate-Collector Charge
--
14
22
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 12A
T
C
= 25
°
C
--
1.4
1.7
V
T
C
= 100
°
C
--
1.3
--
t
rr
Diode Reverse Recovery Time
I
F
= 12A,
di/dt = 200A/us
T
C
= 25
°
C
--
42
60
ns
T
C
= 100
°
C
--
80
--
I
rr
Diode Peak Reverse Recovery
Current
T
C
= 25
°
C
--
3.5
6.0
A
T
C
= 100
°
C
--
5.6
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
°
C
--
80
180
nC
T
C
= 100
°
C
--
220
--
SGP23N60UFD Rev. A1
S
G
P23N60UFD
©2002 Fairchild Semiconductor Corporation
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
24A
12A
I
C
= 6A
C
o
l
l
e
ct
or
-
E
m
i
tte
r
Vo
l
t
age,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
5
10
15
20
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 21W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
Lo
ad
C
u
rr
ent [A
]
0.5
1
10
0
10
20
30
40
50
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
C
o
ll
ect
o
r C
u
rre
n
t
,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
24A
12A
I
C
= 6A
C
o
lle
c
t
o
r
-
E
m
itt
e
r V
o
l
t
a
g
e
,
V
C
E
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
30
60
90
120
150
0
1
2
3
4
24A
12A
I
C
= 6A
Common Emitter
V
GE
= 15V
Co
l
l
ec
to
r - Em
i
t
ter
Vol
t
age,
V
CE
[V
]
Case Temperature, T
C
[
]
0
2
4
6
8
0
20
40
60
80
100
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
Col
l
ec
t
o
r
Cu
r
r
en
t
,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
SGP23N60UFD Rev. A1
S
G
P23N60UFD
©2002 Fairchild Semiconductor Corporation
1
10
100
200
30
100
1000
Eon
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 12A
T
C
= 25
T
C
= 125
S
w
itc
h
in
g
L
o
s
s
[u
J
]
Gate Resistance, R
G
[
]
1
10
100
200
50
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 12A
T
C
= 25
T
C
= 125
S
w
itc
h
in
g
T
i
m
e
[n
s
]
Gate Resistance, R
G
[
]
1
10
100
200
10
100
200
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 12A
T
C
= 25
T
C
= 125
Ton
Tr
S
w
itc
h
in
g
T
i
m
e
[
n
s
]
Gate Resistance, R
G
[
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
4
8
12
16
20
24
50
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 23
T
C
= 25
T
C
= 125
S
w
itc
h
in
g
T
i
m
e
[n
s
]
Collector Current, I
C
[A]
4
8
12
16
20
24
10
100
200
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 23
T
C
= 25
T
C
= 125
Sw
i
t
ch
i
n
g T
i
m
e
[
n
s
]
Collector Current, I
C
[A]
1
10
30
0
200
400
600
800
1000
1200
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
C
a
pac
i
t
anc
e
[pF
]
Collector - Emitter Voltage, V
CE
[V]
SGP23N60UFD Rev. A1
S
G
P23N60UFD
©2002 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.005
0.01
0.1
1
5
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
h
erm
a
l
R
e
sp
on
se, Zth
j
c [
/W
]
Rectangular Pulse Duration [sec]
1
10
100
1000
0.1
1
10
100
200
Safe Operating Area
V
GE
= 20V, T
C
= 100
C
o
lle
c
t
o
r
C
u
rre
n
t
,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
4
8
12
16
20
24
10
100
1000
Eoff
Eon
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 23
T
C
= 25
T
C
= 125
Swi
t
ch
i
n
g Loss [
u
J]
Collector Current, I
C
[A]
0
10
20
30
40
50
0
3
6
9
12
15
300 V
200 V
V
CC
= 100 V
Common Emitter
R
L
= 25
T
C
= 25
G
a
te
- E
m
i
t
t
e
r V
o
l
t
a
g
e
,
V
GE
[ V
]
Gate Charge, Q
g
[ nC ]
0.3
1
10
100
1000
0.1
1
10
100
300
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
50us
100us
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
o
l
l
ec
to
r C
u
r
r
en
t,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
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