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©2002 Fairchild Semiconductor Corporation
SGH20N120RUFD Rev. B2
IGBT
S
G
H20N120RUFD
G
C
E
G
C
E
SGH20N120RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
· Short circuit rated 10
µ
s @ T
C
= 100
°
C, V
GE
= 15V
· High speed switching
· Low saturation voltage : V
CE(sat)
= 2.3 V @ I
C
= 20A
· High input impedance
· CO-PAK, IGBT with FRD : t
rr
= 80ns (typ.)
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGH20N120RUFD
Units
V
CES
Collector-Emitter Voltage
1200
V
V
GES
Gate-Emitter Voltage
±
25
V
I
C
Collector Current
@ T
C
= 25
°
C
32
A
Collector Current
@ T
C
= 100
°
C
20
A
I
CM (1)
Pulsed Collector Current
60
A
I
F
Diode Continuous Forward Current
@ T
C
= 100
°
C
20
A
I
FM
Diode Maximum Forward Current
120
A
T
SC
Short Circuit Withstand Time
@ T
C
= 100
°
C
10
µ
s
P
D
Maximum Power Dissipation
@ T
C
= 25
°
C
230
W
Maximum Power Dissipation
@ T
C
= 100
°
C
92
W
T
J
Operating Junction Temperature
-55 to +150
°
C
T
stg
Storage Temperature Range
-55 to +150
°
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300
°
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Thermal Resistance, Junction-to-Case
--
0.54
°
C
/
W
R
JC
(DIODE)
Thermal Resistance, Junction-to-Case
--
0.84
°
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
°
C
/
W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G C E
TO-3P
SGH20N120RUFD Rev. B2
S
G
H20N120RUFD
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
°
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 1mA
1200
--
--
V
B
VCES
/
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
1
mA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
± 100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 20mA, V
CE
= V
GE
3.5
5.5
7.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 20A
,
V
GE
= 15V
--
2.3
3.0
V
I
C
= 32A
,
V
GE
= 15V
--
2.8
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
2000
--
pF
C
oes
Output Capacitance
--
170
--
pF
C
res
Reverse Transfer Capacitance
--
60
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 20A,
R
G
= 15
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
30
--
ns
t
r
Rise Time
--
60
--
ns
t
d(off)
Turn-Off Delay Time
--
70
130
ns
t
f
Fall Time
--
150
300
ns
E
on
Turn-On Switching Loss
--
1.30
--
mJ
E
off
Turn-Off Switching Loss
--
1.30
--
mJ
E
ts
Total
Switching
Loss
--
2.60
3.65
mJ
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 20A,
R
G
= 15
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
--
30
--
ns
t
r
Rise Time
--
70
--
ns
t
d(off)
Turn-Off Delay Time
--
90
165
ns
t
f
Fall Time
--
200
400
ns
E
on
Turn-On Switching Loss
--
1.50
--
mJ
E
off
Turn-Off Switching Loss
--
2.00
--
mJ
E
ts
Total
Switching
Loss
--
3.50
5.08
mJ
T
sc
Short Circuit Withstand Time
V
CC
= 600 V, V
GE
= 15V
@
T
C
= 100
°
C
10
--
--
µ
s
Q
g
Total Gate Charge
V
CE
= 600 V, I
C
= 20A,
V
GE
= 15V
--
95
140
nC
Q
ge
Gate-Emitter Charge
--
15
25
nC
Q
gc
Gate-Collector Charge
--
43
65
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
14
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 20A
T
C
= 25
°
C
--
2.8
3.5
V
T
C
= 100
°
C
--
2.5
--
t
rr
Diode Reverse Recovery Time
I
F
= 20A
dI/dt = 200 A/
µ
s
T
C
= 25
°
C
--
80
110
ns
T
C
= 100
°
C
--
95
--
I
rr
Diode Peak Reverse Recovery
Current
T
C
= 25
°
C
--
8.0
10.0
A
T
C
= 100
°
C
--
9.5
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
°
C
--
320
500
nC
T
C
= 100
°
C
--
450
--
SGH20N120RUFD Rev. B2
S
G
H20N120RUFD
©2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
10
0
20
40
60
80
100
120
140
20V
17V
15V
12V
V
GE
= 10V
T
C
= 25
Co
llector Cu
rrent, I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
25
50
75
100
125
150
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
Common Emitter
V
GE
= 15V
I
C
= 20A
32A
Co
llector
- Emitter Vo
ltage,
V
CE
[V
]
Case Temperature, T
C
[
]
0
2
4
6
8
10
0
20
40
60
80
100
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
Collecto
r
Current, I
C
[A]
Collector - Emitter Voltage, V
CE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
40A
20A
I
C
= 10A
Col
l
ec
to
r - Em
i
t
t
e
r
Vol
t
age,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
40A
20A
I
C
= 10A
C
o
lle
c
t
o
r
- E
m
itte
r V
o
lt
a
g
e
,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0.1
1
10
100
1000
0
10
20
30
40
V
CC
= 600V
Load Current : peak of square wave
Duty cycle : 50%
T
C
= 100
Power Dissipation = 45W
Load Current [A]
Frequency [KHz]
SGH20N120RUFD Rev. B2
S
G
H20N120RUFD
©2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
500
1000
1500
2000
2500
3000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
Cies
Coes
Cres
Cap
a
citanc
e [pF]
Collector - Emitter Voltage, V
CE
[V]
10
100
10
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
T
C
= 125
tr
td(on)
Switchi
ng Time [ns]
Gate Resistance, R
G
[
]
10
100
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
T
C
= 125
tf
td(off)
Switch
ing Time [
n
s]
Gate Resistance, R
G
[
]
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
T
C
= 125
Eoff
Eon
Eoff
Switching Loss
[
µ
J]
Gate Resistance, R
G
[
]
10
15
20
25
30
35
40
10
100
Common Emitter
V
GE
=
±
15V, R
G
= 15
T
C
= 25
T
C
= 125
tr
td(on)
Sw
itchig
Time [n
s]
Collector Current, I
C
[A]
10
15
20
25
30
35
40
100
Common Emitter
V
GE
=
±
15V, R
G
= 15
T
C
= 25
T
C
= 125
tf
td(off)
Switching Time [ns]
Collector Current, I
C
[A]
SGH20N120RUFD Rev. B2
S
G
H20N120RUFD
©2002 Fairchild Semiconductor Corporation
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
herm
a
l Re
sponse
[Zthjc
]
Rectangular Pulse Duration [sec]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
Collector Curren
t
, I
C
[A]
Collector - Emitter Voltage, V
CE
[V]
10
15
20
25
30
35
40
1000
Common Emitter
V
GE
=
±
15V, R
G
= 15
T
C
= 25
T
C
= 125
Eoff
Eon
Eoff
Switch
ing Loss
[
µ
J]
Collector Current, I
C
[A]
0
20
40
60
80
100
0
2
4
6
8
10
12
14
16
Common Emitter
R
L
= 30
T
C
= 25
600V
400V
V
CC
= 200V
G
a
te
- E
m
i
tter
V
o
ltage
, V
GE
[V
]
Gate Charge, Q
g
[nC]
0.1
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
50
µ
s
100
µ
s
1ms
DC Operation
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
C
o
llec
t
or C
u
rren
t, I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
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