Документация и описания www.docs.chipfind.ru
SFM9214
BV
DSS
= -250 V
R
DS(on)
= 4.0
I
D
= -0.45 A
-250
-0.45
-0.3
-3.6
100
-0.45
0.16
-4.8
1.63
0.013
- 55 to +150
300
77
--
O
1
O
2
O
3
O
1
O
1
30
+
_
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µ
A (Max.) @ V
DS
= -250V
Lower R
DS(ON)
: 3.5
(Typ.)
Advanced Power MOSFET
FEATURES
SOT-223
1. Gate 2. Drain 3. Source
2
1
3
*
When mounted on the minimum pad size recommended (PCB Mount).
Thermal Resistance
Junction-to-Ambient
R
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
*
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
o
C)
Continuous Drain Current (T
A
=70
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
V
DSS
V
*
P
D
*
2001 Fairchild Semiconductor Corporation
Rev. B1
SFM9214
-250
--
-2.0
--
--
--
--
--
-0.21
--
--
--
--
--
35
13
10
18
24
11
9
2.0
4.6
--
--
-4.0
-100
100
-10
-100
4.0
--
295
55
20
30
45
60
30
11
--
--
0.57
225
--
--
--
130
0.61
-0.45
-3.6
-4.0
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=800mH, I
AS
=-0.45A, V
DD
=-50V, R
G
=27
*
, Starting T
J
=25
o
C
I
SD
-1.6A, di/dt
2
50A/
µ
s, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250
µ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
P-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain("Miller" ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/
T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
µ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
µ
A
I
D
=-250
µ
A See Fig 7
V
DS
=-5V,I
D
=-250
µ
A
V
GS
=-30V
V
GS
=30V
V
DS
=-250V
V
DS
=-200V,T
C
=125
o
C
V
GS
=-10V,I
D
=-0.23A
V
DS
=-40V,I
D
=-0.23A
V
DD
=-125V,I
D
=-1.6A,
R
G
=24
See Fig 13
V
DS
=-200V,V
GS
=-10V,
I
D
=-1.6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
µ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-0.45A,V
GS
=0V
T
J
=25
o
C,I
F
=-1.6A
di
F
/dt=100A/
µ
s
O
4
O
4
O
4
O
5
O
4
O
4
O
5
O
1
O
4
S
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
-2
10
-1
10
0
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
µ
s Pulse Test
-I
DR
,
Re
vers
e D
rai
n Cu
rre
nt
[A]
-V
SD
, Source-Drain Voltage [V]
0
2
4
6
8
10
0
2
4
6
8
10
12
V
DS
= -200 V
V
DS
= -125 V
V
DS
= -50 V
@ Notes : I
D
= -1.6 A
-V
GS
,
Gat
e-S
ourc
e V
olt
age
[
V
]
Q
G
, Total Gate Charge [nC]
0
1
2
3
4
5
6
0
2
4
6
8
10
12
@ Note : T
J
= 25
o
C
V
GS
= -20 V
V
GS
= -10 V
R
DS(o
n)
,
[
]
D
rai
n-
Sou
rce
On
-R
esi
sta
nce
-I
D
, Drain Current [A]
2
4
6
8
10
10
-2
10
-1
10
0
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= -40 V
3. 250
µ
s Pulse Test
-I
D
, Drai
n Curr
ent [
A
]
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
@ Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : -15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
-I
D
,
D
rai
n Cur
ren
t
[A
]
-V
DS
, Drain-Source Voltage [V]
SFM9214
10
0
10
1
0
100
200
300
400
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pa
ci
ta
nc
e
[
p
F
]
-V
DS
, Drain-Source Voltage [V]
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
@ Notes :
1. V
GS
= -10 V
2. I
D
= -0.8 A
R
DS(o
n)
,
(
Nor
ma
liz
ed
)
D
rai
n-S
ou
rce
O
n-R
es
ist
anc
e
T
J
, Junction Temperature [
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= -250
µ
A
-B
V
DSS
, (No
rm
al
ize
d)
D
r
a
in-
So
ur
ce Br
ea
kdo
wn
Vo
lt
ag
e
T
J
, Junction Temperature [
o
C]
SFM9214
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
0.01 ms
10 ms
DC
1 ms
0.1 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
-I
D
, Dr
ai
n Cu
rr
en
t [A
]
-V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
-I
D
, Dr
ai
n Cu
rr
en
t [A
]
T
c
, Case Temperature [
o
C]
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
10
0
10
1
10
2
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
J C
(t)=77
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
J C
(t)
Z
JC
(t)
, T
herma
l Re
spons
e
t
1
, Square Wave Pulse Duration [sec]
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
.
t
1.
t
2.
SFM9214
P-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
E
AS
=
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
Charge
V
GS
-10V
Q
g
Q
gs
Q
gd
Vary t
p
to obtain
required peak I
D
-10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V
DS
)
-10V
V
out
V
in
R
L
DUT
R
G
-3mA
V
GS
Current Sampling (I
G
)
Resistor
Current Sampling (I
D
)
Resistor
DUT
V
DS
300nF
50K
200nF
12V
Same Type
as DUT
" Current Regulator "
R
1
R
2
PDF 
ZIP