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RUR1S1560S Rev. A1
©2002 Fairchild Semiconductor Corporation
RUR1S1560S
15A, 600V Ultrafast Diode
The RUR1S1560S is an ultrafast diode (t
rr
< 55ns) with soft
recovery characteristics. It has low forward voltage drop and
is of silicon nitride passivated ion-implanted, epitaxial planar
construction.
This device is intended for use as freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast soft recovery minimizes ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistor.
Formerly developmental type TA9905.
Symbol
Features
· Ultrafast Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 55ns
· Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
· Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
· Avalanche Energy Rated
Applications
· Switching Power Supplies
· Power Switching Circuits
· General Purpose
Packaging
JEDEC TO-263
Ordering Information
PART NUMBER
PACKAGE
BRAND
RUR1S1560S
TO-263
RUR1560
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel, i.e. RUR1S1560S9A.
K
A
CATHODE
(FLANGE)
ANODE
CATHODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
RUR1S1560S
UNITS
V
RRM
Peak Repetitive Reverse Voltage
600
V
V
RWM
Working Peak Reverse Voltage
600
V
V
R
DC Blocking Voltage
600
V
I
F(AV)
Average Rectified Forward Current
15
A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave)
30
A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
200
A
P
D
Power Dissipation
100
W
E
AVL
Avalanche Energy (1A, 40mH)
20
mJ
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
T
L
T
pkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
o
C
o
C
THERMAL SPECIFICATIONS
R
JC
Thermal Resistance Junction to Case
1.5
o
C/W
R
JA
Thermal Resistance Junction to Ambient
60
o
C/W
NOTES:
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
[ /Title
(HUF7
6013P
3,
HUF76
013D3
S)
/Sub-
ject
(20A,
20V,
0.022
Ohm,
N-
Chan-
nel,
Logic
Level
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil,
Semi-
con-
ductor,
N-
Chan-
nel,
Logic
Level
UltraF
ET
Power
MOS-
September 2002
©2002 Fairchild Semiconductor Corporation
RUR1S1560S Rev. A1
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 15A
-
-
1.5
V
I
F
= 15A, T
C
= 150
o
C
-
-
1.2
V
I
R
V
R
= 600V
-
-
100
µ
A
V
R
= 600V, T
C
= 150
o
C
-
-
500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 100A/
µ
s, V
R
= 30V
-
-
55
ns
I
F
= 15A, dI
F
/dt = 100A/
µ
s, V
R
= 30V
-
-
60
ns
t
a
I
F
= 1A, dI
F
/dt = 100A/
µ
s, V
R
= 30V
-
20
-
ns
I
F
= 15A, dI
F
/dt = 100A/
µ
s, V
R
= 30V
-
30
-
ns
t
b
I
F
= 1A, dI
F
/dt = 100A/
µ
s, V
R
= 30V
-
15
-
ns
I
F
= 15A, dI
F
/dt = 100A/
µ
s, V
R
= 30V
-
17
-
ns
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
pw = pulse width.
D = duty cycle.
RUR1S1560S
©2002 Fairchild Semiconductor Corporation
RUR1S1560S Rev. A1
Typical Performance Curves
FIGURE 1. FORWARD VOLTAGE vs FORWARD CURRENT
CHARACTERISTIC
FIGURE 2. REVERSE VOLTAGE vs REVERSE CURRENT
CHARACTERISTIC
FIGURE 3. 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs
FORWARD CURRENT
FIGURE 4. 6. TYPICAL CURRENT DERATING CURVE vs
CASE TEMPERATURE
T
J
= 25
o
C
T
J
= 100
o
C
T
J
= 150
o
C
100.0
10.0
1.0
0.10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
F
, F
O
R
W
ARD CURRENT
(
A
)
V
F
, FORWARD VOLTAGE DROP (V)
T
J
= 25
o
C
T
J
= 100
o
C
T
J
= 150
o
C
200
1
0.1
0.010
0.001
0
100
200
400
600
10
300
500
100
V
R
, REVERSE VOLTAGE (V)
I
R
,
REVERSE
CURRENT
(
µ
A)
80
60
40
20
0
1
10
100
t
rr
t
a
t
b
70
50
30
10
t
,
RECO
VER
Y T
I
M
ES
(
n
s
)
I
F
, FORWARD CURRENT (A)
16
14
12
10
8
6
4
2
0
140
145
150
155
160
165
170
175
180
SQUARE WAVE
DC
T
C
, CASE TEMPERATURE (
o
C)
I
F(
A
V
G
)
, A
VERA
G
E CURRENT
(
A
)
Test Circuits and Waveforms
FIGURE 5. t
rr
TEST CIRCUIT
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
R
G
L
V
DD
MOS IRF840
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
RUR1S1560S
©2002 Fairchild Semiconductor Corporation
RUR1S1560S Rev. A1
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
Test Circuits and Waveforms
(Continued)
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1A
L = 40mH
V
DD
= 50V
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RUR1S1560S
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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