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www.fairchildsemi.com

May 2005

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RMPA2263

i-LoTM

Rev. G

RMPA2263

i-LoTM

WCDMA Power Amplifier Module
19201980 MHz

Features

40% WCDMA efficiency at +28 dBm Pout

14% WCDMA efficiency (85 mA total current) at +16 dBm
Pout

Linear operation in low-power mode up to +19 dBm

Low quiescent current (Iccq): 25 mA in low-power mode

Meets UMTS/WCDMA performance requirements

Meets HSDPA performance requirements

Single positive-supply operation with low power and shut-
down modes

3.4V typical Vcc operation

Low Vref (2.85V) compatible with advanced handset

chipsets

Compact Lead-free compliant LCC package
(4.0 x 4.0 x 1.5 mm nominal)

Industry standard pinout

Internally matched to 50 Ohms and DC blocked RF input/
output

General Description

The RMPA2263 Power Amplifier Module (PAM) is Fairchild's
latest innovation in 50 Ohm matched, surface mount modules
targeting UMTS/WCDMA/HSDPA applications. Answering the
call for ultra-low DC power consumption and extended battery
life in portable electronics, the RMPA2263 uses novel
proprietary circuitry to dramatically reduce amplifier current at
low to medium RF output power levels (< +16 dBm), where the
handset most often operates. A simple two-state Vmode control
is all that is needed to reduce operating current by more than
50% at 16 dBm output power, and quiescent current (Iccq) by
as much as 70% compared to traditional power-saving
methods. No additional circuitry, such as DC-to-DC converters,
are required to achieve this remarkable improvement in
amplifier efficiency. Further, the 4

1.5 mm LCC package is

pin-compatible and a drop-in replacement for last generation 4

4 mm PAMs widely used today, minimizing the design time to
apply this performance-enhancing technology. The multi-stage
GaAs Microwave Monolithic Integrated Circuit (MMIC) is
manufactured using Fairchild RF's InGaP Heterojunction
Bipolar Transistor (HBT) process.

Device

Functional Block Diagram

Vref

Vmode

RF IN

GND

Vcc1

RF OUT

GND

BIAS/MODE SWITCH

Vcc2

11 (paddle ground on package bottom)

INPUT

MATCH

OUTPUT

MATCH

MMIC

(Top View)

PRELIMINARY

www.fairchildsemi.com

RMPA2263

i-LoTM

Rev. G

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Absolute Ratings

Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

Electrical Characteristics

Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR

1.2:1, unless otherwise noted.

2. All phase angles.
3. Guaranteed by design.

Symbol

Parameter

Ratings

Units

Vcc1, Vcc2

Supply Voltages

5.0

Vref

Reference Voltage

2.6 to 3.5

Vmode

Power Control Voltage

3.5

RF Input Power

+10

dBm

Tstg

Storage Temperature

-55 to +150

°C

Symbol

Parameter

Min

Typ

Max

Units

Comments

Operating Frequency

1920

1980

MHz

WCDMA Operation

Power Gain

27.5

Po=+28dBm, Vmode=0V

Po=+16dBm, Vmode

2.0V

Linear Output Power

dBm

Vmode=0V

dBm

Vmode

2.0V

PAEd

PAEd (digital) @ 28dBm

Vmode=0V

PAEd (digital) @ 16dBm

Vmode

2.0V

Itot

High Power Total Current

460

Po=+28dBm, Vmode=0V

Low Power Total Current

Po=+16dBm, Vmode

2.0V

Adjacent Channel Leakage
Ratio

WCDMA Modulation 3GPP
3.2 03-00 DPCCH+1 DCDCH

ACLR1

±5.00MHz Offset

-40

dBc

Po=+28dBm, Vmode=0V

-46

dBc

Po=+16dBm, Vmode

2.0V

ACLR2

±10.0MHz Offset

-52

dBc

Po=+28dBm, Vmode=0V

-57

dBc

Po=+16dBm, Vmode

2.0V

General Characteristics

VSWR

Input Impedance

2.0:1

2.5:1

Noise Figure

Rx No

Receive Band Noise Power

-139

dBm/Hz Po

+28dBm, 2110 to 2170 MHz

2fo

Harmonic Suppression

-38

dBc

+28dBm

3fo5fo

Harmonic Suppression

-55

dBc

+28dBm

Spurious Outputs

2, 3

-60

dBc

Load VSWR

5.0:1

Ruggedness with Load
Mismatch

10:1

No permanent damage

Case Operating Temperature

-30

°C

DC Characteristics

Iccq

Quiescent Current

Vmode

2.0V

Iref

Reference Current

+28dBm

Icc(off)

Shutdown Leakage Current

µA

No applied RF signal

www.fairchildsemi.com

RMPA2263

i-LoTM

Rev. G

263

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Evaluation Board Layout

Materials List

Evaluation Board Schematic

Qty

Item No.

Part Number

Description

Vendor

G657553-1 V2

PC Board

Fairchild

#142-0701-841

SMA Connector

Johnson

#2340-5211TN

Terminals

Ref

Assembly, RMPA2263

Fairchild

GRM39X7R102K50V

1000pF Capacitor (0603)

Murata

5 (Alt)

ECJ-1VB1H102K

1000pF Capacitor (0603)

Panasonic

C3216X5R1A335M

3.3µF Capacitor (1206)

TDK

GRM39Y5V104Z16V

0.1µF Capacitor (0603)

Murata

7 (Alt)

ECJ-1VB1C104K

0.1µF Capacitor (0603)

Panasonic

A/R

SN63

Solder Paste

Indium Corp.

A/R

SN96

Solder Paste

Indium Corp.

XYTT

2263

3, 6, 7, 9

VCC2

(PACKAGE BASE)

50 Ohm TRL

SMA2
RF OUT

SMA1
RF IN

Ohm TRL

3.3

VREF

3.3

1000 pF

0.1

VMODE

VCC1

XYTT

2263

RMPA2263

i-LoTM

Rev. G

263

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www.fairchildsemi.com

Package Outline

Signal Descriptions

Pin #

Signal Name

Description

Vcc1

Supply Voltage to Input Stage

RF In

RF Input Signal

GND

Ground

Vmode

High Power/Low Power Mode Control

Vref

Reference Voltage

GND

Ground

GND

Ground

RF Out

RF Output Signal

GND

Ground

Vcc2

Supply Voltage to Output Stage

GND

Paddle Ground

I/O 1 INDICATOR

TOP VIEW

FRONT VIEW

BOTTOM VIEW

DETAIL A. TYP.

(4.00mm

1.60mm MAX.

.30mm TYP.

.18mm

3.65mm

.85mm TYP.

.25mm TYP.

1.08mm

1.84mm

3.50mm TYP.

See Detail A

) SQUARE

+.100
.050

.40mm

.10mm

.40mm

.45mm

XYTT

2263

XYTT

2263

RMPA2263

i-LoTM

Rev. G

263

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www.fairchildsemi.com

Applications Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Precautions to Avoid Permanent Device Damage:

· Cleanliness: Observe proper handling procedures to ensure

clean devices and PCBs. Devices should remain in their
original packaging until component placement to ensure no
contamination or damage to RF, DC and ground contact
areas.

· Device Cleaning: Standard board cleaning techniques should

not present device problems provided that the boards are
properly dried to remove solvents or water residues.

· Static Sensitivity: Follow ESD precautions to protect against

ESD damage:

A properly grounded static-dissipative surface on which to

place devices.

Static-dissipative floor or mat.

A properly grounded conductive wrist strap for each person

to wear while handling devices.

· General Handling: Handle the package on the top with a

vacuum collet or along the edges with a sharp pair of bent
tweezers. Avoiding damaging the RF, DC, and ground
contacts on the package bottom. Do not apply excessive
pressure to the top of the lid.

· Device Storage: Devices are supplied in heat-sealed,

moisture-barrier bags. In this condition, devices are protected
and require no special storage conditions. Once the sealed
bag has been opened, devices should be stored in a dry
nitrogen environment.

Device Usage:
Fairchild recommends the following procedures prior to
assembly.

· Assemble the devices within 7 days of removal from the dry

pack.

· During the 7-day period, the devices must be stored in an

environment of less than 60% relative humidity and a
maximum temperature of 30°C

· If the 7-day period or the environmental conditions have been

exceeded, then the dry-bake procedure, at 125°C for 24 hours
minimum, must be performed.

Solder Materials & Temperature Profile:
Reflow soldering is the preferred method of SMT attachment.
Hand soldering is not recommended.

Reflow Profile

· Ramp-up: During this stage the solvents are evaporated from

the solder paste. Care should be taken to prevent rapid
oxidation (or paste slump) and solder bursts caused by violent
solvent out-gassing. A maximum heating rate is 3°C/sec.

· Pre-heat/soak: The soak temperature stage serves two

purposes; the flux is activated and the board and devices
achieve a uniform temperature. The recommended soak
condition is: 60-180 seconds at 150-200°C.

· Reflow Zone: If the temperature is too high, then devices may

be damaged by mechanical stress due to thermal mismatch or
there may be problems due to excessive solder oxidation.
Excessive time at temperature can enhance the formation of
inter-metallic compounds at the lead/board interface and may
lead to early mechanical failure of the joint. Reflow must occur
prior to the flux being completely driven off. The duration of
peak reflow temperature should not exceed 20 seconds.
Soldering temperatures should be in the range 255260°C,
with a maximum limit of 260°C.

· Cooling Zone: Steep thermal gradients may give rise to

excessive thermal shock. However, rapid cooling promotes a
finer grain structure and a more crack-resistant solder joint.
The illustration below indicates the recommended soldering
profile.

Solder Joint Characteristics:
Proper operation of this device depends on a reliable void-free
attachment of the heat sink to the PWB. The solder joint should
be 95% void-free and be a consistent thickness.

Rework Considerations:
Rework of a device attached to a board is limited to reflow of the
solder with a heat gun. The device should be subjected to no
more than 15°C above the solder melting temperature for no
more than 5 seconds. No more than 2 rework operations should
be performed.

Recommended Solder Reflow Profile

150

Ramp-Up Rate
3 °C/sec max

Temperature (°C)

Time 25 °C/sec to peak temp

6 minutes max

Ramp-Down Rate
6 °C/sec max

Preheat, 150 to 200 °C

60 - 180 sec

200

217

Time above

liquidus temp

60 - 150 sec

100

260

Peak temp

260 +0/-5 °C

10 - 20 sec

Time (Sec)

Ramp-Up Rate
3 °C/sec max

www.fairchildsemi.com

RMPA2263

i-LoTM

Rev. G

263

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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In Design

First Production

Full Production

Not In Production

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Document Outline